MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第589页
MIL-STD-883F METHOD 5003 20 November 1969 7 e. Scanni ng electr on micr osc opy and elect ron beam mic roanalys is. The scanni ng elect ron mic rosc ope, employi ng an elect ron beam wit h a diameter on t he order of a f…
MIL-STD-883F
METHOD 5003
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c. Diffusion imperfections.
d. Junction geometries.
e. Intermetallic phase formation.
f. Voids at the bond/metallization interface.
g. Diffusion of contact metal into the semiconductor or substrate.
h. Migration of metals across, through, or under the oxide or dielectric.
i. Voids in die or substrate mount.
3.4 Optional measurements
. The purpose of failure analysis is to obtain sufficient information to initiate corrective action
in device design, production, test, or application. It may be necessary to obtain more detailed information than can be
acquired in test conditions A, B, or C on the nature of contaminants or phases observed, concentrations, dimensions of
submicroscopic features, etc. The selection and use of a number or less conventional analytical techniques by highly
qualified personnel can provide this more extensive or fundamental knowledge of the precise chemical, physical, or
electrical mechanisms of failure. The decision as to which techniques are appropriate and the point in the analytical
sequence of test conditions A, B, or C at which they should be employed is contingent on the nature of information desired
and previous results obtained from the specified analytical procedures, and must be left to the discretion of the analyst. Any
of the following techniques may therefore be introduced into a failure analysis sequence at the appropriate point provided
precautions are taken to avoid destruction of the evidence of failure which may be observed in subsequent procedures.
Where multiple samples of the same type of device or failure exist, it shall be permissible to subdivide the quantity of
devices and employ destructive techniques in parallel with the specified test condition provided all samples have been
exposed to electrical verification tests and internal examination (see 3.1.1 through 3.1.3 and 3.2.1 through 3.2.5) prior to any
of the optional measurements. When any of these optional measurements are employed, they shall be listed in the failure
analysis report including the details of the method applied, conditions of test and results.
a. Residual gas analysis. When device surface contamination is indicated as a possible cause of failure, the lid of an
unopened device shall be punctured and the internal gaseous ambient analyzed for the type and concentration of
volatile products. This information then supplements electrical leakage current measurements and hermeticity
tests.
b. Surface profilometer measurement. A mechanical determination of surface topography variations can be made
using this type of instrument. This records the vertical motion of a stylus moved across the surface of the device.
This information can be used to quantitatively determine oxide, dielectric, or metal thicknesses.
c. Photoscanning. A device, with leads and interconnections intact, after being opened, can be scanned with a small
diameter beam of light which generates photovoltages in active p-n junctions. This generated photovoltage which
is dependent on many physical junction properties indicates the presence of surface channels or inversion layers
or both, caused by contamination on, in, or under the passivating oxide layer. It is also possible to locate certain
regions of enhanced high field multiplication, mask misregistration, imperfect diffusions, as well as other device
imperfections involving junction properties.
d. Infrared scanning. An IR detector, sampling infrared radiation from various points of the surface of an operating
microcircuit, can detect the location of hot spots and other thermal abnormalities.
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METHOD 5003
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e. Scanning electron microscopy and electron beam microanalysis. The scanning electron microscope, employing an
electron beam with a diameter on the order of a few hundred angstroms, is the most effective means of attaining
device structural information without the need for special sample preparation procedures. The scanning electron
microscope can perform chemical analysis, such as the microanalyzer, by incorporating a nondispersive x-ray
detector. An electron beam microanalyzer can be used for x-ray spectrochemical analysis of micron sized
volumes of material. Several other device structural properties are determinable through detection and display of
back-scattered primary electrons and secondary electrons. These instruments are most generally used for:
(1) Determination of surface potential variations using secondary electron scanning microscopy. The small size
of the electron beam coupled with the properties of secondary electrons result in the ability to examine
physical defects with much higher resolution and depth of field than light microscopy.
(2) Analysis of micron sized defects such as oxide pin-holed, metallization grain structure.
(3) Determination of products of solid state reactions, such as diffusion, precipitation, and intermetallic
formation.
(4) Corrosion product identification.
f. Electron microscopy. An examination at extremely high magnification of the structure of failed metallization and
bulk materials is best accomplished using electron microscopy.
g. Special test structures. Often the amount of reacted material on a failed circuit is too small to allow definitive
determination of chemical and structural properties. In addition, it is often necessary to reproduce the failure in a
controlled experimental manner for verification of the mechanism of failure. Special test structures may be
fabricated with variations in geometry and materials permitting study of the mechanism without extraneous
influences. This is most advantageous when information is desired concerning the basic failure mechanism(s).
4. SUMMARY
. The following details must be specified in the applicable acquisition document:
a. Test condition letter (see 3.) for test conditions A, B, or C and where applicable, optional measurements (see 3.4),
identifying the specific procedures to be applied and details as to their option application.
b. Any special measurements not described in the applicable test condition.
c. Requirements for data recording and reporting including instructions as to disposition of original data, photographs,
radiographs, etc.
d. Physical and electrical specifications and limits for the device being analyzed.
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METHOD 5003
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