MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第598页

MIL-STD-883F METHOD 5004.11 18 June 2004 8 3.5 Elec tric al meas urements . 3.5.1 I nterim ( pre and post burn-i n) elec tri cal par ameters . Int erim (pr e and post bur n-in) elect ric al tes ting s hall be perfor med …

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MIL-STD-883F
METHOD 5004.11
18 June 2004
7
3.3.2.2 Low level leakage tests
. The purpose of the low level leakage tests (which must be performed after the voltage
stress tests) is to eliminate any device that exhibits abnormal leakage. Since leakage currents can be measured only at the
device terminals, the test conditions and limits will vary depending upon the type of device being tested and the function of
the terminal under test (V
CC
, input, output, etc.). However, there may be cases where this test cannot be performed, i.e.,
input terminals which are forwarded biased junctions or resistive networks. But, since these types of circuits are generally
very sensitive to leakage currents, the device would fail parametrically if abnormal leakage currents were present. For all
other cases, where these measurements can be made, the tests shall be designed as described below:
a. For inputs which can be reverse biased, measure the input leakage at each input terminal at a voltage level which
is equal to one-half the maximum rated input voltage for that device with the supply terminal grounded. The
maximum allowable input leakage shall be established as shown in 3.3.2.2.1. Inputs shall be tested individually
with all other input terminals grounded.
b. For outputs which can be reverse biased, measure the output leakage at each output terminal at a voltage which is
equal to the device's maximum rated input voltage with the supply terminal grounded (if possible). The maximum
allowable output leakage limit shall be established as shown in 3.3.2.2.1. The input terminals shall be all grounded
(if the supply terminal is grounded) or if the supply terminal is not grounded, the input terminals should be in such a
state that the output terminal under test is in the reverse biased mode. All outputs shall be tested.
c. Measure the supply terminal leakage current at a voltage which is equal to 80 percent of the voltage required to
forward-bias a single PN junction on the device under test. The maximum allowable supply terminal leakage shall
be established as shown in 3.3.2.2.1.
3.3.2.2.1 Establishing maximum leakage current limits
. The maximum allowable leakage current shall be the upper 3
sigma value as established through an empirical evaluation of three or more production lots which are representative of
current production. Any process change which results in a substantial shift in the leakage distribution shall be cause for
recalculation and resubmission of this limit. The low current sensitivity of the test system shall be no higher than 20 percent
of the expected mean value of the distribution.
3.4 Substitution of test methods and sequence
.
3.4.1 Stabilization bake
. Molybdenum-gold multilayered conductors shall be subject to stabilization bake in accordance
with method 1008, condition C immediately before performing internal visual inspection 3.1.3.
3.4.2 Accelerated testing
. When test condition F of method 1015 for temperature/time accelerated screening is used for
either burn-in (see 3.1.10) or reverse bias burn-in (see 3.1.12), it shall be used for both. Also, when devices have
aluminum/gold metallurgical systems (at either the die pad or package post), the constant acceleration test (3.1.5) shall be
performed after burn-in and before completion of the final electrical tests (3.1.15) (i.e., to allow completion of time limited
tests but that sufficient 100 percent electrical testing to verify continuity of all bonds is accomplished subsequent to constant
acceleration).
MIL-STD-883F
METHOD 5004.11
18 June 2004
8
3.5 Electrical measurements.
3.5.1 Interim (pre and post burn-in) electrical parameters
. Interim (pre and post burn-in) electrical testing shall be
performed when specified, to remove defective devices prior to further testing or to provide a basis for application of percent
defective allowable (PDA) criteria when a PDA is specified. The PDA shall be 5 percent or one device, whichever is greater.
This PDA shall be based, as a minimum, on failures from group A, subgroup 1 plus deltas (in all cases where delta
parameters are specified) with the parameters, deltas and any additional subgroups (or subgroups tested in lieu of A-1)
subject to the PDA as specified in the applicable device specification or drawing. If no device specification or drawing
exists, subgroups tested shall at least meet those of the most similar device specification or Standard Microcircuit Drawing.
In addition, for class level S the PDA shall be 3 percent (or one device, whichever is greater) based on failures from
functional parameters measured at room temperature. For class level S screening where an additional reverse bias burn-in
is required, the PDA shall be based on the results of both burn-in tests combined. The verified failures after burn-in divided
by the total number of devices submitted in the lot or sublot for burn-in shall be used to determine the percent defective for
that lot, or sublot and the lot or sublot shall be accepted or rejected based on the PDA for the applicable device class. Lots
and sublots may be resubmitted for burn-in one time only and may be resubmitted only when the percent defective does not
exceed twice the specified PDA, or 20 percent whichever is greater. This test need not include all specified device
parameters, but shall include those measurements that are most sensitive to and effective in removing electrically defective
devices.
3.5.2 Final electrical measurements
. Final electrical testing of microcircuits shall assure that the microcircuits tested
meet the electrical requirements of the applicable device specification or drawing and shall include, as a minimum, all
parameters, limits, and conditions of test which are specifically identified in the device specification or drawing as final
electrical test requirements. Final electrical test requirements that are duplicated in interim (post burn-in) electrical test (see
3.1.15) need not be repeated as final electrical tests.
3.5.3 Radiation latch-up screen
. Latch-up screen shall be conducted when specified in purchase order or contract. Test
conditions, temperature, and the electrical parameters to be measured pre, post, and during the test shall be in accordance
with the specified device specification. The PDA for each inspection lot or class level S sublot submitted for radiation
latch-up test shall be 5 percent or one device, whichever is greater.
3.6 Test results
. When required by the applicable device specification or drawing, test results shall be recorded and
maintained in accordance with the general requirements of 4.2 of this standard and A.4.7 of appendix A of MIL-PRF-38535.
3.7 Failure analysis
. When required by the applicable device specification, failure analysis of devices rejected during any
test in the screening sequence shall be accomplished in accordance with method 5003, test condition A of this standard.
3.8 Defective devices
. All devices that fail any test criteria in the screening sequence shall be removed from the lot at the
time of observation or immediately at the conclusion of the test in which the failures was observed. Once rejected and
verified as a device failure, no device may be retested for acceptance.
*
MIL-STD-883F
METHOD 5004.11
18 June 2004
9
4. SUMMARY
. The following details shall be specified:
a. Procedure paragraph if other than 3.1, and device class.
b. Sequence of test, test method, test condition, limit, cycles, temperature, axis, etc., when not specified, or if other
than specified (see 3).
c. Interim (pre and post burn-in) electrical parameters (see 3.5.1).
d. Burn-in test condition (see 3.1.10) and burn-in test circuit.
e. Delta parameter measurements or provisions for PDA including procedures for traceability where applicable (see
3.5.1).
f. Final electrical measurements (see 3.5.2).
g. Constant acceleration level (see 3.2).
h. Requirements for data recording and reporting, where applicable (see 3.6).
i. Requirement for failure analysis (see 3.7).