MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第6页

MIL-STD-883F vi TEST METHODS METH OD NO. TE ST PROC EDURES 5001 Parameter mean value cont rol 5002.1 Par ameter di str ibution c ontr ol 5003 Failur e analysis proc edures f or mic roci rcui ts 5004.11 Scr eening procedu…

MIL-STD-883F

TEST METHODS

METHOD NO. MECHANICAL TESTS

2021.3 Glassivation layer integrity

2022.2 Wetting balance solderability

2023.5 Nondestructive bond pull

2024.2 Lid torque for glass-frit-sealed packages

2025.4 Adhesion of lead finish

2026 Random vibration

2027.2 Substrate attach strength

2028.4 Pin grid package destructive lead pull test

2029 Ceramic chip carrier bond strength

2030 Ultrasonic inspection of die attach

2031.1 Flip chip pull-off test

2032.2 Visual inspection of passive elements

2035 Ultrasonic inspection of TAB bonds

ELECTRICAL TESTS (DIGITAL)

3001.1 Drive source, dynamic

3002.1 Load conditions

3003.1 Delay measurements

3004.1 Transition time measurements

3005.1 Power supply current

3006.1 High level output voltage

3007.1 Low level output voltage

3008.1 Breakdown voltage, input or output

3009.1 Input current, low level

3010.1 Input current, high level

3011.1 Output short circuit current

3012.1 Terminal capacitance

3013.1 Noise margin measurements for digital microelectronic devices

3014 Functional testing

3015.7 Electrostatic discharge sensitivity classification

3016 Activation time verification

3017 Microelectronics package digital signal transmission

3018 Crosstalk measurements for digital microelectronic device packages

3019.1 Ground and power supply impedance measurements for digital microelectronics device packages

3020 High impedance (off-state) low-level output leakage current

3021 High impedance (off-state) high-level output leakage current

3022 Input clamp voltage

3023.1 Static latch-up measurements for digital CMOS microelectronic devices

3024 Simultaneous switching noise measurements for digital microelectronic devices

ELECTRICAL TESTS (LINEAR)

4001.1 Input offset voltage and current and bias current

4002.1 Phase margin and slew rate measurements

4003.1 Common mode input voltage range

Common mode rejection ratio

Supply voltage rejection ratio

4004.1 Open loop performance

4005.1 Output performance

4006.1 Power gain and noise figure

4007 Automatic gain control range

MIL-STD-883F

TEST METHODS

METHOD NO. TEST PROCEDURES

5001 Parameter mean value control

5002.1 Parameter distribution control

5003 Failure analysis procedures for microcircuits

5004.11 Screening procedures

5005.14 Qualification and quality conformance procedures

5006 Limit testing

5007.6 Wafer lot acceptance

5008.9 Test procedures for hybrid and multichip microcircuits

5009.1 Destructive physical analysis

5010.4 Test procedures for custom monolithic microcircuits

5011.4 Evaluation and acceptance procedures for polymeric adhesives.

5012.1 Fault coverage measurement for digital microcircuits.

5013 Wafer fabrication control and wafer acceptance procedures for processed GaAs wafers

MIL-STD-883F

1. SCOPE

1.1 Purpose

. This standard establishes uniform methods, controls, and procedures for testing microelectronic devices

suitable for use within Military and Aerospace electronic systems including basic environmental tests to determine

resistance to deleterious effects of natural elements and conditions surrounding military and space operations; mechanical

and electrical tests; workmanship and training procedures; and such other controls and constraints as have been deemed

necessary to ensure a uniform level of quality and reliability suitable to the intended applications of those devices. For the

purpose of this standard, the term "devices" includes such items as monolithic, multichip, film and hybrid microcircuits,

microcircuit arrays, and the elements from which the circuits and arrays are formed. This standard is intended to apply only

to microelectronic devices. The test methods, controls, and procedures described herein have been prepared to serve

several purposes:

a. To specify suitable conditions obtainable in the laboratory and at the device level which give test results equivalent

to the actual service conditions existing in the field, and to obtain reproducibility of the results of tests. The tests

described herein are not to be interpreted as an exact and conclusive representation of actual service operation in

any one geographic or outer space location, since it is known that the only true test for operation in a specific

application and location is an actual service test under the same conditions.

b. To describe in one standard all of the test methods of a similar character which now appear in the various

joint-services and NASA microelectronic device specifications, so that these methods may be kept uniform and thus

result in conservation of equipment, manhours, and testing facilities. In achieving this objective, it is necessary to

make each of the general tests adaptable to a broad range of devices.

c. To provide for a level of uniformity of physical, electrical and environmental testing; manufacturing controls and

workmanship; and materials to ensure consistent quality and reliability among all devices screened in accordance

with this standard.

1.2 Intended use of or reference to MIL-STD-883

. When this document is referenced or used in conjunction with the

processing and testing of JAN devices in conformance with the requirements of appendix A of

MIL-PRF-38535, QML devices in conformance with MIL-PRF-38535 or non-JAN devices in accordance with 1.2.1 or 1.2.2

herein, such processing and testing shall be in full conformance with all the applicable general requirements and those of

the specifically referenced test methods and procedures.

For contracts negotiated prior to 31 December 1984, device types that have been classified as manufacturer's 883 (B or S)

product prior to 31 December 1984 shall not have to meet 1.2.1 or 1.2.2.

Existing contracts as of the 31 December 1984, previously negotiated add-ons to these contracts, and future spares for

these contracts may continue to use device types which were classified as manufacturer's 883

(B or S) prior to 31 December 1984.

New contracts, and any device types classified as compliant to MIL-STD-883 after 31 December 1984 shall comply with

1.2.1. Any devices meeting only the provisions of 1.2.2 are noncompliant to MIL-STD-883.