MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第613页

MIL-STD-883F METHOD 5004.11 18 June 2004 23 APPENDIX A ATTACHMENT 2 Patter ning/ Alignment chec k, opt ical Exposure dos e, reti cle/ LYA. S/D Impl ant patt ern ins pecti on, UV pell icle i nspec tion, light or las er su…

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MIL-STD-883F
METHOD 5004.11
18 June 2004
22
APPENDIX A
ATTACHMENT 2
EXAMPLE OF DEFECT DETECTION FOR KEY PROCESS STEPS:
PROCESS STEP
PRODUCT MONITOR EQUIPMENT MONITOR RELIABILITY
MONITOR
Wafer start Incoming Si QA NA NA
EPI Laser surface particle Gas flow/pressure, NA
scan. chamber temp
Start Oxide Oxide thickness, laser Tube temp profile, Oxide integrity
surface particle scan. CV, thermocouple cal, test wafers
gas flows, tube particle
checks using laser surface
scan.
Patterning/Well UV light particle insp, Exposure dose, reticle/ LYA
Implant optical pattern insp, pellicle inspection,
e-test parametrics. stepper stage checks
implant dose processor
and voltage calibration,
DI water resistivity.
Particle checks of stepper,
implanter, coat/develop
tracks using laser surface
particle scan.
Active Region Alignment check, optical Exposure dose, reticle/ Oxide integrity
Patterning/Gate Oxide inspection, automated pellicle inspections, test wafers,
(no 2010 equiv.) pattern inspection, UV light stepper stage checks, tube comb/serpentine
and laser surface particle temp profile, CV thermo- test structures,
inspections, in-line SEM CD couple cal, gas flows, DI LYA.
measurement, e-test water resistivity. Particle
parametrics. checks of stepper, diffusion
tube, coat/develop tracks
using laser surface particle
scan.
Poly Dep/Patterning Alignment check, optical and Dep tube pump/vent speed, Comb/serpentine
automated pattern inspection, MFC calibration, gas flows, test structures,
laser surface particle pressures, temperature. buried contact
inspections, in-line SEM CD Expose dose, reticle/pellicle check, LYA.
measurement, e-test checks, stepper stage checks.
parametrics. DI water resistivity.
Particle checks on poly tube,
stepper and coat/develop
tracks using laser surface
particle scan.
MIL-STD-883F
METHOD 5004.11
18 June 2004
23
APPENDIX A
ATTACHMENT 2
Patterning/ Alignment check, optical Exposure dose, reticle/ LYA.
S/D Implant pattern inspection, UV pellicle inspection,
light or laser surface stepper stage checks.
particle inspections. implant dose processor
E-test parametrics. and voltage calibration,
DI water resistivity.
Particle checks of stepper,
implanter, coat/develop
tracks using laser surface
particle scan.
ILD 1/Patterning Alignment check, auto- Exposure dose, reticle/ Refractive
mated pattern inspection, pellicle inspection, index.
UV light and laser surface stepper stage checks. % phosphorus.
particle inspection, e-test ILD deposition system Film integrity
parametrics. In-line SEM temp/pressure. MFC tests (break-
CD measure. calibration, gas flows. down, etc.).
DI water resistivity. LYA.
Particle checks on stepper,
coat/develop tracks and ILD
deposition system.
Metal 1/Patterning Alignment check, auto- Expose dose, reticle/ Contact chains,
mated pattern inspection, pellicle inspection, Metal-to-poly
laser surface particle stepper stage checks. contact, Metal-to-
inspection, metal Metal dep thickness, diff contacts,
resistivity/specularity, RGA of dep system, electromigration
In-line SEM CD measurement gas flows, pressures, monitors, metal
and electrical CD measure, pump/vent rate checks, CDs (at end of
e-test parametrics. metal resistivity/ line), step
specularity. Particle coverage. LYA.
checks on metal dep
system, stepper and
coat/develop tracks using
laser surface scan.
ILD 2/Patterning. Similar to ILD1. Similar to ILD1. Similar to ILD1.
Metal 2/Patterning Similar to Metal 1 Similar to Metal 1 Similar to Metal 1
with addition of Via
chains, Metal 2-to-
Metal 1 contact.
Glassivation/ Coarse alignment check, Glassivation thickness, Acid bath for
Bond pads optical inspection of phos content, temp, glass integrity.
bond pads to ensure pressure and flows. Acoustic micro-
clearing and of passivation Exposure dose, stepper scopy.
for cornerholes. stage parameters. Part-
icle checks on all equip.
Backside prep/ Post-tape visual, post- Grind rate check, grind Warpage and
Chrome/Gold Dep/ grind visual, post-detape pressure check. thickness checks.
E-test/Sort visual (all optical). Evaporator pressure/leak Die cracking and
Warpage check, thickness rate checks, RGA, power adhesion
check. Chrome/gold thickness and gas flows. Warpage monitors at
checks, visual for backside and thickness checks on assembly.
appearance post-dep. Post- test wafers.
sort visual (optical).
MIL-STD-883F
METHOD 5004.11
18 June 2004
24
APPENDIX A
ATTACHMENT 3
ANALYTICAL TOOLS/MONITORS AND SCREENS
Analytical tools may include, but are not limited to the following:
a. Oblique light, very low magnification
b. Optical microscope
c. Laser scattering (or equivalent)
d. Automated pattern inspection
e. Alignment measurement tool (automated, high-resolution)
f. Non-destructive S.E.M.
g. Wafer mapping
Broad Use of Tools for Inspections (tools may include but are not limited to):
Oblique Light, visual inspection: A quick and gross visual inspection at very low mag (1X to 20X) using a light source
projected onto the wafer and tilting the wafer to detect large particles. This is an inspection step used in-line at various key
process steps.
Optical microscope: Looks for defects that are detectable optically (eg: metal stringers, large particles, visible foreign
material, visible resist imperfections such as drips, visible voids and cracks, visible misalignment, etc.). This tool is used at
different magnifications, at beginning and/or end of key process steps (200X optical sampling in-line for a selected key
process step and 800X optical check at the end of a key process step and before proceeding to the next key process step).
Laser scanning (or equivalent): Used to detect any anomalous surface defects (eg: very fine particles that may not be
detected by optical microscopy). May be used in numerous process steps and is particularly important early in the process
to control telescoping defects.
Automated Pattern recognition: Used to verify integrity of two dimensional geometries (detects anomalies such as: voids
and cracks in the metal, metal bridging, diffusion and poly faults or any other abnormalities in an expected pattern).
Automated high resolution alignment measurement tool: Used for inter-level registration at very fine tolerances (on the
order of 0.1 µm). This tool is used to align very fine critical geometries undetectable by conventional high power optical
registration tools.
Non-destructive S.E.M.: In-line product monitor used for very high power visual examination of critical process steps
(critical dimension, step coverage, metal thinning, etc.).
wafer mapping: An analytical technique using data from various inspection tools (eg: automated pattern recognition tools,
laser scanning tools, e-test results) for defect characterization and partitioning.
Product, Process and Reliability Monitors/Screens
These monitors/screens incorporate inspections/tests which may include but are not limited to):