MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第616页

MIL-STD-883F METHOD 5004.11 18 June 2004 26 This page i ntenti onally lef t blank

MIL-STD-883F

METHOD 5004.11

18 June 2004

APPENDIX A

ATTACHMENT 3

In-line electrical test (E-test): This monitor is used to measure electrical characteristics of transistor elements (sheet

resistance, doping levels and other transistor parametrics), contact chains, metallization structures (line width, thickness,

resistance) and via structures. Parametric failures detectable by e-test may be indicative of an unacceptable incidence of

killer or critical defects.

Test structures: Special structures used to detect killer or critical defects (eg: serpentine structures used to detect metal

continuity such as voids, comb structures for bridge detection and to verify field oxide isolation integrity, electromigration

structures to verify metal integrity and step coverage and inter-layer dielectric structures to verify e-field integrity).

Periodic reliability studies: Intended to verify design life margins of the technology.

Yield Analysis: Used to validate effectiveness of in-line monitors by a closed loop feedback system that detects the

effects of killer or critical defect escapes not caught in-line. Actions may include: scrapping lot, root cause analysis and

correction, lot screening, etc. (see section 70).

Other monitors: Used to measure key process elements. Examples may include but are not limited to:

a. Metal reflectivity and resistivity (to check metal irregularities such as: hillocks formations, step thinning, changes in

granularity, voiding, etc.).

b. Ionic contamination.

c. Refractive index for interlayer dielectric thickness measurements.

d. Post wafer probe visual inspection. A monitor performed on randomly selected post probe wafer(s) beginning with

visual high power inspection and may be followed by subsequent detailed analysis (S.E.M., EDX, layer strip-back,

etc.). This is used to confirm the effectiveness of in-line monitors.

e. Acid bath (used for quick detection/ decoration of glassivation defects, cracks and holes) or acoustic microscopy

(to measure glassivation integrity).

Equipment Monitors (equipment monitors may include but are not limited to):

Particle checks: Performed on process equipment such as: etch, metal deposition, implant, diffusion, dielectric

deposition, photoresist material and application. Particles of sufficient size and density may lead to killer or critical defects

(metal bites, dielectric holes, poly/ diffusion geometry changes, etc.).

Residual Gas Analysis: Used to monitor gas integrity of key process equipment (eg: metal deposition equipment to

control corrosion).

Photolithography exposure equipment: Used to verify critical parameters and controls for photolithography operation (pre-

alignment checks, stage accuracy, machine alignment accuracy using reference patterns, lens distortion check, alignment

accuracy, wafer chuck flatness measurement, lens focus check, reticle rotation, etc.)

MIL-STD-883F

METHOD 5004.11

18 June 2004

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MIL-STD-883F

METHOD 5005.14

18 June 2004

METHOD 5005.14

QUALIFICATION AND QUALITY CONFORMANCE PROCEDURES

1. PURPOSE.

This method establishes qualification and quality conformance inspection procedures for microelectronics

to assure that the device and lot quality conforms with the requirements of the applicable acquisition document. The full

requirements of groups A, B, C, D, and E tests and inspections are intended for use in initial device qualification,

requalification in the event of product or process change, and periodic testing for retention of qualification. Groups A and B

tests and inspections are required for quality conformance inspection on individual inspection lots as a condition for

acceptance for delivery. Groups C and D tests are required for quality conformance inspection on a periodic basis as a

condition for acceptance for delivery. Group E tests are qualification and quality conformance procedures to be utilized only

for radiation hardness assurance levels as specified in table V. In general, it is intended that the device class level to which

qualification or quality conformance inspection is conducted would be the same device class level to which screening

procedures (in accordance with method 5004) are conducted. However, it is permissible for qualification or quality

conformance procedures to be specified at a higher quality level (in no case shall a lower level be permitted) to reduce the

potential percent-defective. It is also permissible to specify tightened inspection criteria for individual subgroups where

experience indicates justifiable concern for specific quality problems.

NOTE: Reference to method 5005 on a stand alone basis (not indicating compliance or noncompliance to 883) requires

full compliance to 1.2.1 of this standard (see 1.2.2 of this standard).

2. APPARATUS.

Suitable electrical measurement equipment necessary to determine compliance with the requirements

of the applicable acquisition document and other apparatus as required in the referenced test methods.

3. PROCEDURE.

The procedure contained in 3.1, 3.2, or 3.3, as applicable to the microcircuit type and class, shall apply

for all qualifications and quality conformance inspection requirements. Subgroups within a group of tests may be performed

in any sequence but individual tests within a subgroup (except group B, subgroup 2) shall be performed in the sequence

indicated for groups B, C, D, and E tests. Where end-point electrical measurements are required for subgroups in groups B,

C, D, and E testing, they shall be as specified in the applicable device specification or drawing. Where end-point

measurements are required but no parameters have been identified in the acquisition document for that purpose, the final

electrical parameters specified for 100 percent screening shall be used as end-point measurements. Microcircuits which are

contained in packages which have an inner seal or cavity perimeter of 2 inches or more in total length or have a package

mass of 5 grams or more may be treated in accordance with the optional provisions below, where applicable.

Constant acceleration. Delete test condition E and replace with test condition as specified in the applicable device

specification or drawing. Unless otherwise specified, the stress level for large monolithic microcircuit packages shall not be

reduced below test condition D. If the stress level specified is below condition D, the manufacturer must have data to justify

this reduction and this data must be maintained and available for review by the preparing or acquiring activity. The minimum

stress level allowed is condition A.

Qualification and quality conformance inspection requirements for radiation hardness assured devices are in addition to the

normal classes level S and level B requirements. Those requirements for each of the specified radiation levels (M, D, P, L,

R, F, G and H) are detailed in table V.

Qualified manufacturers list (QML) manufacturers' who are certified and qualified to MIL-PRF-38535 or who have been

grated transitional certification to MIL-PRF-38535 may modify the class level B tables (tables I, IIb, III, and IV) as specified in

the applicable device specification or Standard Microcircuit Drawing and as permitted in 1.2 of MIL-STD-883 provided the

modification is contained in the manufacturer's Quality Management (QM) plan and the "Q" or "QML" certification mark is

marked on the devices. For contractor prepared drawings with specific references to individual test methods of MIL-STD-

883 (e.g., method 1010, method 2002, etc.), these test methods may not be modified by a QML manufacturer without the

knowledge and approval of the acquiring activity.