MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第632页

MIL-STD-883F METHOD 5005.14 18 June 2004 16 This page i ntenti onally lef t blank

MIL-STD-883F

METHOD 5005.14

18 June 2004

3.8 Data reporting. When required by the applicable acquisition document, the following data shall be made available for

each lot submitted for qualification or quality conformance inspection:

a. Results of each subgroup test conducted, initial, and any resubmission.

b. Number of devices rejected.

c. Failure mode of each rejected device and, for class S, the associated mechanism for catastrophic failures of each

rejected device.

d. Number of additional samples added, when applicable.

e. Resubmitted lots, identification and history.

f. Read and record variables data on all specified electrical parameter measurements in group B.

4. SUMMARY

. The following details shall be specified in the applicable device specification:

a. Device class and procedure paragraph if other than 3.

b. Sequence of test, sample size, test method, and test condition where not specified, or if other than specified.

c. Test condition, cycles, temperatures, axis, etc., where not specified, or if other than specified (see 3).

d. Acceptance procedure (see 3.3) and quantity (accept number) or sample size number and acceptance number, if

other than specified (see 3).

e. Electrical parameters for group A.

f. Electrical parameters for groups B, C, D, and E end point measurements, where applicable.

g. Requirements for failure analysis (see 3.8).

h. Requirements for data recording and reporting if other than specified in 3.8.

i. Restriction on resubmission of failed lots (see 3.4), where applicable.

j. Steady-state life test circuits, where not specified or if other than specified (see subgroup 1 of table III and

subgroup 5 of table IIa).

k. Parameters on which delta measurements are required.

MIL-STD-883F

METHOD 5005.14

18 June 2004

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MIL-STD-883F

METHOD 5006

20 November 1969

METHOD 5006

LIMIT TESTING

1. PURPOSE

. This method provides means for establishing or evaluating the maximum capabilities of microelectronic

devices, including such capabilities as absolute maximum ratings (from which safe design limits may be derived), maximum

stresses which may be applied in screening or testing without causing degradation, and sensitivity to particular screening or

testing without causing degradation, and sensitivity to particular screening or testing stresses and the associated modes or

mechanisms of failure. Since this is a relatively expensive and time consuming procedure, it is not intended for general

application to all device acquisitions. It should however be extremely useful in evaluating the capabilities of new device

types or devices which have experienced significant modifications in design, materials or processes which might be

expected to alter their stress tolerance or primary modes and mechanisms of failure. It should also be useful in providing

information vital to quality and reliability assurance in high reliability programs or in acquisition extending over significant

periods of time where test results can be used to provide corrective action in device design, processing or testing.

1.1 Destructive testing

. All limit testing accomplished in accordance with this method is considered destructive and

devices shall be removed from their respective lot.

1.2 Parameter measurements

. Electrical measurement shall be performed to remove defective devices after each stress

step unless otherwise specified herein or in the applicable acquisition document. These measurements need not include all

device parameters, but shall include sufficient measurements to detect all electrically defective devices. When delta

parameter measurements are required they shall be specified in the applicable acquisition document.

2. APPARATUS

. The apparatus for this test shall include equipment specified in the referenced test methods as

applicable and electrical measurement equipment necessary to determine device performance.

3. PROCEDURE

. Limit testing shall be conducted in accordance with the procedure contained in 3.1 and 3.2 using

samples sizes as designated in table I.

TABLE I. Sample sizes for limit testing

Limit test

Thermal evaluation

Extended thermal shock

Step-stress mechanical shock

Step-stress constant acceleration

Step-stress operational life

Constant high stress operational life

Step-stress storage life

Sample size

Total devices 65

3.1 Test condition A. Procedure for monolithic and multichip microcircuits

. Limit testing shall be conducted as described

in 3.1.1 through 3.1.7 in the sequence shown, unless otherwise specified (see 4.). Failure analysis of all devices failing limit

tests shall be performed in accordance with method 5003, test condition B, unless otherwise specified in the applicable

acquisition document. Limit testing may be discontinued prior to completing the test when 50 percent of the test sample has

failed that specific test.