MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第64页
MIL-STD-883F METHOD 1011.9 27 July 1990 4 This page i ntenti onally lef t blank
MIL-STD-883F
METHOD 1011.9
27 July 1990
3
TABLE II. Physical property requirements of perfluorocarbon fluids
. 1/
Test condition B C
ASTM
test
method
Step 1 Boiling point, °C >125 >150 D1120
Density at 25°C gm/ml
Dielectric strength
volts/mil
Residue, microgram/gram
Appearance
>1.6
>300
<50
Clear, colorless liquid
D941
D877
D2109
Not applicable
Step 2 Density at 25°C gm/ml
Dielectric strength
volts/mil
Residue, micrograms/gram
Appearance
>1.6
>300
<50
Clear, colorless liquid
D941
D877
D2109
Not applicable
1
/ The perfluorocarbon used shall have a viscosity less than or equal to
the thermal shock equipment manufacturer's recommended viscosity at the
minimum temperature.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Special mounting, if applicable.
b. Test condition, if other than test condition B (see 3).
c. Number of test cycles, if other than 15 cycles (see 3).
d. End-point measurements and examinations (e.g., end-point electrical measurements, seal test (method 1014), or
other acceptance criteria).
MIL-STD-883F
METHOD 1011.9
27 July 1990
4
This page intentionally left blank
MIL-STD-883F
METHOD 1012.1
4 November 1980
1
METHOD 1012.1
THERMAL CHARACTERISTICS
1. PURPOSE
. The purpose of this test is to determine the thermal characteristics of microelectronic devices. This
includes junction temperature, thermal resistance, case and mounting temperature and thermal response time of the
microelectronic devices.
1.1 Definitions
. The following definitions and symbols shall apply for the purpose of this test:
a. Case temperature, T
C
, in °C. The case temperature is the temperature at a specified accessible reference point
on the package in which the microelectronic chip is mounted.
b. Mounting surface temperature, T
M
, in °C. The mounting surface temperature is the temperature of a specified
point at the device-heat sink mounting interface (or primary heat removal surface).
c. Junction temperature, T
J
, in °C. The term is used to denote the temperature of the semiconductor junction in the
microcircuit in which the major part of the heat is generated. With respect to junction temperature measurements,
T
J(Peak)
is the peak temperature of an operating junction element in which the current distribution is nonuniform,
T
J(Avg)
is the average temperature of an operating junction element in which the current distribution is nonuniform,
and T
J(Region)
is the temperature in the immediate vicinity within six equivalent radii (an equivalent radius is the
radius of a circle having the same area as contained in a junction interface area) of an operating junction. In
general T
J(Region)
<T
J(Avg)
<T
J(Peak)
. If the current distribution in an operating junction element is uniform then T
J(Avg)
<
T
J(Peak)
.
d. Thermal resistance, junction to specified reference point, R
θJR
, in °C/W. The thermal resistance of the microcircuit
is the temperature difference from the junction to some reference point on the package divided by the power
dissipation P
D
.
e. Power dissipation, P
D
, in watts, is the power dissipated in a single semiconductor test junction or in the total
package, P
D(Package)
.
f. Thermal response time, t
JR
, in seconds, is the time required to reach 90 percent of the final value of junction
temperature change caused by the application of a step function in power dissipation when the device reference
point temperature is held constant. The thermal response time is specified as t
JR(Peak)
, t
JR(Avg)
, or t
JR(Region)
to
conform to the particular approach used to measure the junction temperature.
g. Temperature sensitive parameter, TSP, is the temperature dependent electrical characteristic of the
junction-under test which can be calibrated with respect to temperature and subsequently used to detect the
junction temperature of interest.
2. APPARATUS
. The apparatus required for these tests shall include the following as applicable to the specified test
procedures.
a. Thermocouple material shall be copper-constantan (type T) or equivalent, for the temperature range -180°C to
+370°C. The wire size shall be no larger than AWG size 30. The junction of the thermocouple shall be welded to
form a bead rather than soldered or twisted. The accuracy of the thermocouple and associated measuring system
shall be ±0.5°C.
b. Controlled temperature chamber or heat sink capable of maintaining the specified reference point temperature to
within ±0.5°C of the preset (measured) value.