MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第640页
MIL-STD-883F METHOD 5007.6 19 August 1994 4 TABLE I. W afer lot acc eptance tes ts - Conti nued. Test Conditi ons 1 / Limits 3 / Sampl ing plan 6. Gold bac king thickne ss (when appli - cable ) All r eadings shall be rec…
MIL-STD-883F
METHOD 5007.6
19 August 1994
3
TABLE I. Wafer lot acceptance tests - Continued.
Test
Conditions 1/ Limits 3/ Sampling plan
3. Thermal sta-
bility (ap-
plicable to:
All linear;
all MOS; all
bipolar digi-
tal operating
at 10 V or
more)
Record VFB
or V
T
.
b. ∆V
FB
or ∆
VT
<
1.0 V,normalized to
an oxide thickness of
1,000Å for bipolar
linear devices that
operate above 5 V and
containing MOS tran-
sistor(s), and digital
devices that operate
above 10 V and
containing MOS
structures.
The V
FB
limit shall
not be exceeded by the
sum of the absolute
values of the MOS
oxide transistors and
the metallization ∆.
The monitor(s) shall
be oxidized and
metallized with the
lot. Separate
monitors may be used
for this test.
c. ∆V
FB
or V
T
<0.4 V,
normalized to an oxide
thickness of 1,000Å
for MOS devices. A
monitor consisting of
a gate oxide
metallized with the
lot shall be used.
One wafer (or
monitor) per lot.
Reject lot if
measurement ex-
ceeds limits or
revert to test
of each wafer.
4. SEM MIL-STD-883,
method 2018.
MIL-STD-883,
method 2018.
MIL-STD-883,
method 2018. Lot
acceptance basis.
5. Glassivation
thickness
All readings
shall be
recorded.
6 kÅ minimum for
Si0
2
and 2 kÅ
for Si
3
N
4
with
maximum deviation of
±20 percent from
approved design
nominal.
One wafer (or
monitor) per lot.
Reject lot if any
measurement ex-
ceeds limits
or revert to test
of each wafer.
See footnotes at end of table.
MIL-STD-883F
METHOD 5007.6
19 August 1994
4
TABLE I. Wafer lot acceptance tests - Continued.
Test
Conditions 1/ Limits 3/ Sampling plan
6. Gold backing
thickness
(when appli-
cable)
All readings
shall be
recorded.
In accordance with
approved design
nominal thickness and
tolerance.
One wafer (or
monitor) per lot.
Reject lot if any
measurement ex-
ceeds limits or
revert to test of
each wafer.
1
/ The manufacturer shall have documented procedures for performing each required test. These procedures shall
be made available to the qualifying activity or acquiring activity upon request.
2
/ This test is not required when the finished wafer design thickness is greater than 10 mil.
3
/ Approved design nominal values or tolerances shall be documented in the manufacturer’s baseline
documentation.
*
MIL-STD-883F
METHOD 5008.9
18 December 2000
1
METHOD 5008.9
TEST PROCEDURES FOR HYBRID AND MULTICHIP MICROCIRCUITS
Method 5008 is canceled effective 1 June 1993. It is superseded by MIL-PRF-38534. For Federal Stock classes other
than 5962, the following paragraphs of MIL-PRF-38534 are provided to replace method 5008.
Superseded
method 5008
MIL-PRF-38534 Requirement
3.2 Element evaluation C.3 Element evaluation Element evaluation
3.3 Process control C.4 Process control Process control
3.4 Device screening C.5 Device screening Screening
3.5 Quality conformance evaluation C.6 Conformance
Inspection and Periodic
Inspection
QCI