MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第644页
MIL-STD-883F METHOD 5009.1 25 August 1983 2 3.2 DPA repor t . A DPA r eport s hall be prepar ed for eac h ins pecti on lot tes ted and s ubmitted t o the acqui ring or qualif ying acti vity. The report shall consi st of …

MIL-STD-883F
METHOD 5009.1
25 August 1983
1
METHOD 5009.1
DESTRUCTIVE PHYSICAL ANALYSIS
1. PURPOSE
. The purpose of this test is to describe requirements for performance of destructive physical analysis
(DPA) for the applicable device class, for sampling, preparation, procedures, accept/reject criteria, disposition of rejected
lots and documentation. While this test method may be used by a microcircuit manufacturer, it is intended that these
procedures be actually performed by the contractor, subcontractor, or independent testing lab.
1.1 Definitions
.
a. Defects. Any nonconformance from specified requirements for form, fit, function, or workmanship.
b. Destructive physical analysis. The process of disassembling, testing, and inspecting a device for the purpose of
determining conformance with applicable design and process requirements.
c. Lot related defect. A defect, attributable to a variance in design or the manufacturing, test or inspection process,
that may be repetitive (e.g., mask defects, metallization thickness, bond strength insulation resistance and
separation between metallization runs, wires or wires and die edge).
d. Screenable defects. A defect for which an effective nondestructive screening test or inspection is available or can
be developed.
2. APPARATUS
. The apparatus shall consist of suitable equipment to perform each specified DPA test.
3. PROCEDURE
. The organization (contractor, subcontractor, or independent test lab) conducting the DPA test should
contact the manufacturer of the product and supply a list of test methods that are to be used during the DPA test. The
manufacturer can then advice the DPA test organization if there are any significant changes to those test methods that are
allowed as modification options within MIL-STD-883, MIL-PRF-38535 or under the manufacturer’s approved program plan.
3.1 Sample selection
. A random sample shall be selected from the inspection lot in accordance with table I, unless
otherwise specified.
TABLE I. Sample selection.
Monolithic microcircuits
Two devices or 1 percent of the
inspection lot, whichever is
greater, to a maximum of 5 total
devices, unless otherwise specified,
(see 3.1.1 and 4a).
Hybrid or multichip Two devices or 1 percent of the
microcircuits inspection lot, whichever is
greater, to a maximum of 5 total
devices, unless otherwise specified,
(see 3.1.1 and 4a).
3.1.1 Combining sample
. Where an inspection lot is comprised of more than one device type covered by a single device
specification or drawing, the sample selected shall be proportionately divided from the device types in order to assure a
representative sampling, and not less than one, of each device type in the DPA sample.

MIL-STD-883F
METHOD 5009.1
25 August 1983
2
3.2 DPA report. A DPA report shall be prepared for each inspection lot tested and submitted to the acquiring or qualifying
activity. The report shall consist of the following:
a. DPA summary sheet.
b. DPA checklist.
c. DPA test data sheet.
d. Photographs.
e. Other data or analysis supporting findings.
3.2.1 DPA checklist
. A checklist shall be used to record all attribute data from the applicable test.
3.2.2 DPA test data sheet
. A test data sheet shall be used to record the variable data from the applicable test and any
electrical test specified.
NOTE: No provisions have been included herein for electrical testing since all devices shall have already passed the
specified electrical tests; however, electrical tests may be required for follow-up analysis of a physical discrepancy.
3.2.3 DPA summary sheet
. A summary sheet shall be used to summarize the DPA test results, analysis supporting
findings, provide other essential data and indicate disposition of lot.
3.3 General requirements
.
3.3.1 DPA evaluation
. The results of all tests and examinations performed on DPA sample items shall be analyzed by
qualified technical personnel to determine disposition and corrective action, as applicable, of the lot from which the samples
were taken.
3.3.2 Photographs
. Photographs shall be made at sufficient magnification and with enough views to clearly document
significant details of the parts construction. When SEM or optical microscopes are used to evaluate a device, photographs
shall be made to document discrepant or worst case features.
3.3.2.1 Photograph requirements
. A minimum of two photographs will normally be required to document baseline
characteristics of an opened part prior to performance of any destructive tests. These shall be supplemented with other
photographs as required to record observed defects or anomalies. Microscopy techniques such as color, dark field, phase
contrast, interference contrast, etc., shall be used as necessary to enhance image clarity. When SEM examination is
performed the DPA report shall include, as a minimum, view(s) of significant features of the die, a photograph of the worst
case oxide step and a photograph of the worst case metallization. Each photograph shall be labeled or otherwise identified
with the DPA report number, and, if applicable, the part number, serial number, lot date code, and the magnification (and
viewing angle for SEM photographs) used.
3.3.3 Retention of DPA reports
. The original copy of all DPA reports shall be retained by the performing organization and
a copy submitted to the acquiring or qualifying activity.
3.3.4 Sectioned samples
. When performed techniques similar to those used to prepare sectioned metallurgical and
mineralogical specimens for optical examination are generally applicable to the preparation of DPA samples. The device to
be examined is first potted in a suitable plastic (or mounting by other suitable means). It is then cut or rough ground to the
desired section plane. This is followed by fine grinding, polish and sometimes an etch to bring out the necessary detail.
Care shall be taken to ensure that damage is not introduced during any of these operations (in particular, during potting
cure, cutting, and rough grinding).

MIL-STD-883F
METHOD 5009.1
25 August 1983
3
3.3.5 SEM samples. The microcircuits shall be prepared for SEM examination in accordance with method 2018 of
MIL-STD-883, "Notes on SEM examination of Microelectronic Parts". Other types of parts shall be prepared for SEM by
using standard laboratory techniques for mounting and coating, taking care that anomalies are not introduced by the coating.
3.3.6 Baseline design documentation
. Each DPA procedure should be referenced to a baseline photograph, sketch, or
drawing showing the general configurations of the device to be examined, which includes critical dimensions, location of
constituent parts and details of any pertinent materials or processes. The baseline documentation shall be current so as to
show any approved changes in the configuration.
3.4 Microcircuits (monolithic) procedure
. The purpose is to verify external and internal physical configuration and that the
devices were not damaged during sealing or any other processing step(s). To verify that the devices have met the
requirements for radiography, seal, external visual, internal water vapor analysis, internal visual, baseline, bond strength,
and contamination control.
3.4.1 External visual
. Record identification marking. Examine parts, at 10X minimum magnification for configuration and
defects in seal, plating, or glass feed through in accordance with method 2009 of MIL-STD-883.
3.4.2 Radiography
. When specified, radiography shall be in accordance with MIL-STD-883, method 2012. Radiograph
shall be required before delidding to examine cavity devices for loose particles, die attach, and to determine internal
clearances. It is also useful as an aid in locating delidding and sectioning cuts and to nondestructively investigate suspected
defects.
3.4.3 Seal
. A fine and gross leak seal test shall be performed on all DPA samples in accordance with MIL-STD-883,
method 1014. Record both fine and gross leak rates.
3.4.4 Internal water vapor analysis
. When specified, internal water vapor analysis shall be performed in accordance with
method 1018.
3.4.5 Internal visual
. De-cap all samples using appropriate method (see 3.6) taking care not to introduce contamination
during the de-cap process. Examine all devices in accordance with MIL-STD-883, method 2010, test condition A or B or
appendix A of method 5004 (alternate 2) as applicable, and methods 2013 and 2014.
3.4.6 Baseline configuration
. During external and internal visual all devices shall be evaluated for conformance with the
baseline design documentation (see 3.3.6) and other specified requirements. Variance from requirements shall be reported
as defects.
3.4.7 Bond strength
. Perform bond strength tests in accordance with MIL-STD-883, method 2011, test condition D. Pull
all wires on at least two devices. Record the force at which the wire breaks or bond lifts and the location of the break.
3.4.8 SEM
. Prepare the samples for SEM evaluation and conduct this inspection in accordance with MIL-STD-883,
method 2018. If any of the wire bonds lifted during the bond strength tests, these shall be included in the SEM inspection to
determine the nature of the bond to chip interface at the point of rupture.
3.4.9 Die shear
. Die shear tests shall be performed on at least two samples in accordance with MIL-STD-883, method
2019. Record the die force required to separate the die from substrate and the interface appearance in terms of areas
affected in the break.
3.4.10 Evaluation criteria
. The inspection lot shall be considered suspect if devices exhibit any defects when inspected or
tested to the criteria listed below. Each defect shall be photographed (when applicable), measured, and described in the
DPA report. In the absence of defects or based on a decision by the responsible parts authority that any observed
anomalies do not constitute rejectable defects, the lot may be considered acceptable for use (see 3.7.1 for disposition of
suspect lots).