MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第645页

MIL-STD-883F METHOD 5009.1 25 August 1983 3 3.3.5 SEM s amples . The mi croc irc uits shall be prepared f or SEM examination i n accor dance wit h method 2018 of MIL-STD- 883, "Notes on SEM examination of Mic roelec…

MIL-STD-883F

METHOD 5009.1

25 August 1983

3.2 DPA report. A DPA report shall be prepared for each inspection lot tested and submitted to the acquiring or qualifying

activity. The report shall consist of the following:

a. DPA summary sheet.

b. DPA checklist.

c. DPA test data sheet.

d. Photographs.

e. Other data or analysis supporting findings.

3.2.1 DPA checklist

. A checklist shall be used to record all attribute data from the applicable test.

3.2.2 DPA test data sheet

. A test data sheet shall be used to record the variable data from the applicable test and any

electrical test specified.

NOTE: No provisions have been included herein for electrical testing since all devices shall have already passed the

specified electrical tests; however, electrical tests may be required for follow-up analysis of a physical discrepancy.

3.2.3 DPA summary sheet

. A summary sheet shall be used to summarize the DPA test results, analysis supporting

findings, provide other essential data and indicate disposition of lot.

3.3 General requirements

3.3.1 DPA evaluation

. The results of all tests and examinations performed on DPA sample items shall be analyzed by

qualified technical personnel to determine disposition and corrective action, as applicable, of the lot from which the samples

were taken.

3.3.2 Photographs

. Photographs shall be made at sufficient magnification and with enough views to clearly document

significant details of the parts construction. When SEM or optical microscopes are used to evaluate a device, photographs

shall be made to document discrepant or worst case features.

3.3.2.1 Photograph requirements

. A minimum of two photographs will normally be required to document baseline

characteristics of an opened part prior to performance of any destructive tests. These shall be supplemented with other

photographs as required to record observed defects or anomalies. Microscopy techniques such as color, dark field, phase

contrast, interference contrast, etc., shall be used as necessary to enhance image clarity. When SEM examination is

performed the DPA report shall include, as a minimum, view(s) of significant features of the die, a photograph of the worst

case oxide step and a photograph of the worst case metallization. Each photograph shall be labeled or otherwise identified

with the DPA report number, and, if applicable, the part number, serial number, lot date code, and the magnification (and

viewing angle for SEM photographs) used.

3.3.3 Retention of DPA reports

. The original copy of all DPA reports shall be retained by the performing organization and

a copy submitted to the acquiring or qualifying activity.

3.3.4 Sectioned samples

. When performed techniques similar to those used to prepare sectioned metallurgical and

mineralogical specimens for optical examination are generally applicable to the preparation of DPA samples. The device to

be examined is first potted in a suitable plastic (or mounting by other suitable means). It is then cut or rough ground to the

desired section plane. This is followed by fine grinding, polish and sometimes an etch to bring out the necessary detail.

Care shall be taken to ensure that damage is not introduced during any of these operations (in particular, during potting

cure, cutting, and rough grinding).

MIL-STD-883F

METHOD 5009.1

25 August 1983

3.3.5 SEM samples. The microcircuits shall be prepared for SEM examination in accordance with method 2018 of

MIL-STD-883, "Notes on SEM examination of Microelectronic Parts". Other types of parts shall be prepared for SEM by

using standard laboratory techniques for mounting and coating, taking care that anomalies are not introduced by the coating.

3.3.6 Baseline design documentation

. Each DPA procedure should be referenced to a baseline photograph, sketch, or

drawing showing the general configurations of the device to be examined, which includes critical dimensions, location of

constituent parts and details of any pertinent materials or processes. The baseline documentation shall be current so as to

show any approved changes in the configuration.

3.4 Microcircuits (monolithic) procedure

. The purpose is to verify external and internal physical configuration and that the

devices were not damaged during sealing or any other processing step(s). To verify that the devices have met the

requirements for radiography, seal, external visual, internal water vapor analysis, internal visual, baseline, bond strength,

and contamination control.

3.4.1 External visual

. Record identification marking. Examine parts, at 10X minimum magnification for configuration and

defects in seal, plating, or glass feed through in accordance with method 2009 of MIL-STD-883.

3.4.2 Radiography

. When specified, radiography shall be in accordance with MIL-STD-883, method 2012. Radiograph

shall be required before delidding to examine cavity devices for loose particles, die attach, and to determine internal

clearances. It is also useful as an aid in locating delidding and sectioning cuts and to nondestructively investigate suspected

defects.

3.4.3 Seal

. A fine and gross leak seal test shall be performed on all DPA samples in accordance with MIL-STD-883,

method 1014. Record both fine and gross leak rates.

3.4.4 Internal water vapor analysis

. When specified, internal water vapor analysis shall be performed in accordance with

method 1018.

3.4.5 Internal visual

. De-cap all samples using appropriate method (see 3.6) taking care not to introduce contamination

during the de-cap process. Examine all devices in accordance with MIL-STD-883, method 2010, test condition A or B or

appendix A of method 5004 (alternate 2) as applicable, and methods 2013 and 2014.

3.4.6 Baseline configuration

. During external and internal visual all devices shall be evaluated for conformance with the

baseline design documentation (see 3.3.6) and other specified requirements. Variance from requirements shall be reported

as defects.

3.4.7 Bond strength

. Perform bond strength tests in accordance with MIL-STD-883, method 2011, test condition D. Pull

all wires on at least two devices. Record the force at which the wire breaks or bond lifts and the location of the break.

3.4.8 SEM

. Prepare the samples for SEM evaluation and conduct this inspection in accordance with MIL-STD-883,

method 2018. If any of the wire bonds lifted during the bond strength tests, these shall be included in the SEM inspection to

determine the nature of the bond to chip interface at the point of rupture.

3.4.9 Die shear

. Die shear tests shall be performed on at least two samples in accordance with MIL-STD-883, method

2019. Record the die force required to separate the die from substrate and the interface appearance in terms of areas

affected in the break.

3.4.10 Evaluation criteria

. The inspection lot shall be considered suspect if devices exhibit any defects when inspected or

tested to the criteria listed below. Each defect shall be photographed (when applicable), measured, and described in the

DPA report. In the absence of defects or based on a decision by the responsible parts authority that any observed

anomalies do not constitute rejectable defects, the lot may be considered acceptable for use (see 3.7.1 for disposition of

suspect lots).

MIL-STD-883F

METHOD 5009.1

25 August 1983

INSPECTION REQUIREMENT MIL-STD-883 EVALUATION CRITERIA

External visual Method 2009

Radiography Method 2012

Seal Method 1014

Internal water vapor Method 1018

Internal visual Method 2010 test condition A or B or

alternate 2 of Method 5004 as applicable,

2013 and 2014

Bond strength Method 2011

SEM Method 2018

Die shear Method 2019

Configuration Baseline design documentation

3.5 Microcircuits hybrid and multichip procedure

. The purpose is to verify external and internal physical configuration. To

verify that devices met the requirements for radiography, PIND, seal, external Visual, gas analysis, internal visual, baseline,

bond strength, and contamination control. These devices are normally custom and will depend on contractor drawings,

therefore, the DPA procedure for a hybrid or multichip microcircuit shall be tailored to evaluate the features specified and the

overall configuration as defined by the applicable hybrid or multichip drawing.

3.5.1 External visual

. Conduct external visual examination on all samples to determine conformance with MIL-STD-883,

method 2009, and the applicable device specification.

3.5.2 Radiography

. When specified, radiography shall be in accordance with MIL-STD-883, method 2012. Radiography

shall be required before delidding to examine cavity devices for loose particles, die attach, improper interconnecting wires,

and to determine internal clearances. It is also useful as an aid in locating delidding and sectioning cuts and to

nondestructively investigate suspected defects.

3.5.3 Particle impact noise detection test (PIND)

. A PIND test shall be performed on all DPA samples in accordance with

MIL-STD-883, method 2020, condition A or B.

3.5.4 Seal

. A fine and gross leak seal test shall be performed on all DPA samples in accordance with MIL-STD-883,

method 1014. Record both fine and gross leak rates.

3.5.5 Internal water vapor analysis

. When specified, internal water vapor analysis shall be performed in accordance with

method 1018.

3.5.6 Internal visual

. De-cap all devices (see 3.6) and perform internal visual inspection in accordance with

MIL-STD-883, method 2017, and the applicable device design data.

3.5.7 Baseline configuration

. Evaluate configuration and workmanship of each sample for compliance with the

requirements of the applicable device specifications and drawings or baseline design documentations (see 3.3.6). Report

variances as defects.

3.5.8 Bond strength

. Perform bond strength tests in accordance with MIL-STD-883, method 2011. Pull all wires on at

least two devices. Record the force at which the wire breaks or bond lifts and location of the break.

3.5.9 SEM

. Prepare the samples for SEM evaluation and conduct this inspection on the microcircuits and other

expanded contact chips in accordance with MIL-STD-883, method 2018. If any of the wire bonds lifted during the bond

strength test, these shall be included in the SEM inspection to determine the nature of the bond to chip interface at the point

of rupture.