MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第646页

MIL-STD-883F METHOD 5009.1 25 August 1983 4 INSPECTION REQUIREMENT MIL-STD- 883 EVALUATION CRITERIA External vis ual Method 2009 Radiography Method 2012 Seal Method 1014 Inter nal water vapor Method 1018 Inter nal vis ua…

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MIL-STD-883F
METHOD 5009.1
25 August 1983
3
3.3.5 SEM samples. The microcircuits shall be prepared for SEM examination in accordance with method 2018 of
MIL-STD-883, "Notes on SEM examination of Microelectronic Parts". Other types of parts shall be prepared for SEM by
using standard laboratory techniques for mounting and coating, taking care that anomalies are not introduced by the coating.
3.3.6 Baseline design documentation
. Each DPA procedure should be referenced to a baseline photograph, sketch, or
drawing showing the general configurations of the device to be examined, which includes critical dimensions, location of
constituent parts and details of any pertinent materials or processes. The baseline documentation shall be current so as to
show any approved changes in the configuration.
3.4 Microcircuits (monolithic) procedure
. The purpose is to verify external and internal physical configuration and that the
devices were not damaged during sealing or any other processing step(s). To verify that the devices have met the
requirements for radiography, seal, external visual, internal water vapor analysis, internal visual, baseline, bond strength,
and contamination control.
3.4.1 External visual
. Record identification marking. Examine parts, at 10X minimum magnification for configuration and
defects in seal, plating, or glass feed through in accordance with method 2009 of MIL-STD-883.
3.4.2 Radiography
. When specified, radiography shall be in accordance with MIL-STD-883, method 2012. Radiograph
shall be required before delidding to examine cavity devices for loose particles, die attach, and to determine internal
clearances. It is also useful as an aid in locating delidding and sectioning cuts and to nondestructively investigate suspected
defects.
3.4.3 Seal
. A fine and gross leak seal test shall be performed on all DPA samples in accordance with MIL-STD-883,
method 1014. Record both fine and gross leak rates.
3.4.4 Internal water vapor analysis
. When specified, internal water vapor analysis shall be performed in accordance with
method 1018.
3.4.5 Internal visual
. De-cap all samples using appropriate method (see 3.6) taking care not to introduce contamination
during the de-cap process. Examine all devices in accordance with MIL-STD-883, method 2010, test condition A or B or
appendix A of method 5004 (alternate 2) as applicable, and methods 2013 and 2014.
3.4.6 Baseline configuration
. During external and internal visual all devices shall be evaluated for conformance with the
baseline design documentation (see 3.3.6) and other specified requirements. Variance from requirements shall be reported
as defects.
3.4.7 Bond strength
. Perform bond strength tests in accordance with MIL-STD-883, method 2011, test condition D. Pull
all wires on at least two devices. Record the force at which the wire breaks or bond lifts and the location of the break.
3.4.8 SEM
. Prepare the samples for SEM evaluation and conduct this inspection in accordance with MIL-STD-883,
method 2018. If any of the wire bonds lifted during the bond strength tests, these shall be included in the SEM inspection to
determine the nature of the bond to chip interface at the point of rupture.
3.4.9 Die shear
. Die shear tests shall be performed on at least two samples in accordance with MIL-STD-883, method
2019. Record the die force required to separate the die from substrate and the interface appearance in terms of areas
affected in the break.
3.4.10 Evaluation criteria
. The inspection lot shall be considered suspect if devices exhibit any defects when inspected or
tested to the criteria listed below. Each defect shall be photographed (when applicable), measured, and described in the
DPA report. In the absence of defects or based on a decision by the responsible parts authority that any observed
anomalies do not constitute rejectable defects, the lot may be considered acceptable for use (see 3.7.1 for disposition of
suspect lots).
MIL-STD-883F
METHOD 5009.1
25 August 1983
4
INSPECTION REQUIREMENT MIL-STD-883 EVALUATION CRITERIA
External visual Method 2009
Radiography Method 2012
Seal Method 1014
Internal water vapor Method 1018
Internal visual Method 2010 test condition A or B or
alternate 2 of Method 5004 as applicable,
2013 and 2014
Bond strength Method 2011
SEM Method 2018
Die shear Method 2019
Configuration Baseline design documentation
3.5 Microcircuits hybrid and multichip procedure
. The purpose is to verify external and internal physical configuration. To
verify that devices met the requirements for radiography, PIND, seal, external Visual, gas analysis, internal visual, baseline,
bond strength, and contamination control. These devices are normally custom and will depend on contractor drawings,
therefore, the DPA procedure for a hybrid or multichip microcircuit shall be tailored to evaluate the features specified and the
overall configuration as defined by the applicable hybrid or multichip drawing.
3.5.1 External visual
. Conduct external visual examination on all samples to determine conformance with MIL-STD-883,
method 2009, and the applicable device specification.
3.5.2 Radiography
. When specified, radiography shall be in accordance with MIL-STD-883, method 2012. Radiography
shall be required before delidding to examine cavity devices for loose particles, die attach, improper interconnecting wires,
and to determine internal clearances. It is also useful as an aid in locating delidding and sectioning cuts and to
nondestructively investigate suspected defects.
3.5.3 Particle impact noise detection test (PIND)
. A PIND test shall be performed on all DPA samples in accordance with
MIL-STD-883, method 2020, condition A or B.
3.5.4 Seal
. A fine and gross leak seal test shall be performed on all DPA samples in accordance with MIL-STD-883,
method 1014. Record both fine and gross leak rates.
3.5.5 Internal water vapor analysis
. When specified, internal water vapor analysis shall be performed in accordance with
method 1018.
3.5.6 Internal visual
. De-cap all devices (see 3.6) and perform internal visual inspection in accordance with
MIL-STD-883, method 2017, and the applicable device design data.
3.5.7 Baseline configuration
. Evaluate configuration and workmanship of each sample for compliance with the
requirements of the applicable device specifications and drawings or baseline design documentations (see 3.3.6). Report
variances as defects.
3.5.8 Bond strength
. Perform bond strength tests in accordance with MIL-STD-883, method 2011. Pull all wires on at
least two devices. Record the force at which the wire breaks or bond lifts and location of the break.
3.5.9 SEM
. Prepare the samples for SEM evaluation and conduct this inspection on the microcircuits and other
expanded contact chips in accordance with MIL-STD-883, method 2018. If any of the wire bonds lifted during the bond
strength test, these shall be included in the SEM inspection to determine the nature of the bond to chip interface at the point
of rupture.
MIL-STD-883F
METHOD 5009.1
25 August 1983
5
3.5.10 Die shear. Die shear tests shall be performed on at least two samples in accordance with MIL-STD-883, method
2019. Record the die force required to separate the die from substrate and the interface appearance in terms of area
affected in the break. Test a representative sample of each chip type in each package under test. Samples of each other
chip type such as resistors and capacitors shall also be tested for shear strength in accordance with the requirements of the
applicable specification, and the force required to separate the active and passive components from the substrate shall be
recorded.
3.5.11 Evaluation criteria
. The lot shall be considered suspect if parts exhibit any defects when inspected or tested to the
criteria listed below. Each defect shall be photographed, measured, and described in the DPA report. In the absence of
defects or based on a decision by the responsible parts authority that any observed anomalies do not constitute rejectable
defects, the lot may be considered acceptable for use (see 3.7.1 for disposition of suspect lots).
INSPECTION REQUIREMENT
MIL-STD-883 EVALUATION CRITERIA, Sample Size
External visual Method 2009
Radiography Method 2012
PIND Method 2020
Seal Method 1014
Internal water vapor Method 1018
Internal visual Methods 2017, 2010 test condition A or B
or alternate 2 of Method 5004 as applicable;
2013 and 2014
Bond strength Method 2011
SEM Method 2018
Die shear Method 2019
Configuration Baseline design documentation
3.6 Delidding procedures
. The devices shall be delidded using one of the procedures below or other suitable means.
Caution should be exercised to preclude damage to the device or the generation of internal contamination as the result of
delidding.
3.6.1 Solder seals
. Do not reflow the solder. After these cans are opened, the interior shall be examined for excess
solder or flux. Reflowing the solder seal will destroy the evidence. To open, grind can just above the header until it is thin
enough to be cut with a sharp instrument.
3.6.2 TO-5 type enclosures
. Semiconductors, microcircuits, and other devices are often packaged on TO-5 type
enclosure that can be quickly opened using a commercial device known as a "Head Remover, Silicon" or, more commonly,
as a TO-5 can opener. This device can be modified to accept various lid heights and a metal guide bar may be added over
the cutting wheel to maintain minimum clearance between the TO-5 flange and the cutting wheel.
3.6.3 Flange welded enclosures
. Grind off flange until can is thin enough to be cut with a sharp instrument.
3.6.4 Tubulated enclosures
. Before opening, file or dry grind into the crimp to ensure that it has properly engaged the
conductor. Note whether the number and placement of the crimps are normal and check for over crimping. Free the center
conductor from the crimp before removing the device cover by using a can opener or grinder.
3.6.5 Solder sealed flat-pack or DIP
. Hold the sample flat against a dry Buehler grinding wheel (180 grit paper) until the
lid becomes thin enough to make the cavity indentation visible. Clean the sample, then puncture the lid with a sharp
instrument and peel it off.