MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第658页

MIL-STD-883F METHOD 5010.4 18 June 2004 8 TABL E III. Dev ice scr eening - Conti nued. Screen Class le vel S Class le vel B Refer ence paragra ph Method Reqmt. Method Reqmt. Seal Fine Gross 1014 100% 1014 100% 3. 4.8 Rad…

MIL-STD-883F

METHOD 5010.4

18 June 2004

TABLE III. Device screening -Continued.

Screen

Class level S Class level B Reference

paragraph

Method Reqmt. Method Reqmt.

Interim (post-burn-in)

electrical parameters

In accordance

with applicable

device

specification

100% In accordance

with applicable

device

specification

100% 3.4.9.1

Percent defective

allowable (PDA)

calculation

5 percent

(subgroup 1,

table IV)

3 percent

functional

parameters at

25°C

(subgroup 7

table IV)

All

lots

5 percent

(subgroup 1,

table IV)

All

lots

3.4.9.1

Final electrical test

a. Static tests

(1) 25°C (subgroup 1,

table IV)

(2) Maximum and

minimum rated

operating temp.

(subgroup 2, 3,

(table IV)

b. Dynamic or functional

tests

(1) 25°C (subgroup 4,

or 7, table IV)

(2) Minimum and

maximum rated

operating temp.

(subgroup 5 and

6, or 8, table

IV)

c. Switching tests at

25°C (subgroup 9,)

table IV)

In accordance

with applicable

device

specification

100%

In accordance

with applicable

device

specification

100%

3.4.11

MIL-STD-883F

METHOD 5010.4

18 June 2004

TABLE III. Device screening - Continued.

Screen

Class level S Class level B Reference

paragraph

Method Reqmt. Method Reqmt.

Seal

Fine

Gross

1014 100% 1014 100% 3.4.8

Radiographic 2012 two views 100%

3.4.12

Qualification or quality

conformance inspection

test sample selection

See 3.5

External visual 2009 100% 2009 100% 3.4.13

3.4.2 Internal visual inspection

. Internal visual inspection shall be performed to the requirements of method 2010,

condition A for class level S devices and condition B for class level B devices. Devices awaiting preseal inspection, or other

accepted, unsealed devices awaiting further processing shall be stored in a dry, inert, controlled environment until sealed.

Unless otherwise specified, at the manufacturer's option, test samples for group B, bond strength may be randomly selected

prior to or following internal visual, prior to sealing provided all other specification requirements are satisfied (e.g., bond

strength requirements shall apply to each inspection lot, bond failures shall be counted even if the bond would have failed

internal visual exam).

The alternate procedure of 3.4.2.1 shall be used when any of the following criteria are met:

a. Minimum horizontal geometry is less than three microns.

b. Metallization consists of two or more levels.

c. Opaque materials mask design features.

3.4.2.1 Alternate procedures for class level B microcircuits

. Alternate procedures may be used on an optional basis on

any microcircuit, provided that the conditions and limits of the alternate procedures are submitted to, and approved by the

preparing activity, or the acquiring activity.

3.4.2.1.1 Alternate procedures

. The deletions and the changes stated herein are allowable only if the requirements of

alternate 1 or alternate 2 are met.

Alternate 1: The deletions and the changes stated in 3.4.2.1.1a. are allowable for complex monolithic microcircuits

for class level B product only if the requirements of 3.4.2.1.1.b and 3.4.2.1.1.c are imposed and any

of the following conditions exists.

1. Minimum horizontal geometry is less than 3 micrometers (µm).

2. Interconnects consisting of two or more levels.

3. Opaque materials mask design features.

a. For inspection of each microcircuit die, delete the inspection criteria of 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.1.5, 3.1.6, 3.1.7,

and 3.2.5 of condition B of method 2010 and for use in conjunction with alternate procedures, add 3.1.1.1, 3.1.1.2,

3.1.1.6, 3.1.3, 3.1.4, and 3.2.5 to the low magnification inspection of method 2010.

b. Temperature cycling (3.4.5). The minimum total number of temperature cycles shall be 50. The manufacturer

may reduce the number of temperature cycles from 50 to the 10 required as part of normal screening based upon

data justifying the reduction in temperature cycles approved by the preparing activity and an approved plan which

shall include the following criteria:

MIL-STD-883F

METHOD 5010.4

18 June 2004

(1) Reduction of test must be considered separately for each wafer fabrication line and each die family.

(2) The manufacturer shall demonstrate that the wafer fabrication line that produces product which will involve

reduction of temperature cycles is capable and in process control.

(3) The manufacturer shall perform a high magnification visual inspection on a small sample of devices (e.g.,

5(0)) to monitor the process. This inspection may be performed at wafer level.

c. Special electrical screening tests shall be applied to each microcircuit die at the wafer, individual die (chip) and

packaged, or both, microcircuit level in accordance with the requirements of MIL-STD-883, method 5004, 3.3.2.

The conditions and limits of the electrical tests (in table III format) shall be submitted to the preparing activity for

approval and subsequently maintained on file with the qualifying activity. These special screens are in addition to

the required electrical parametric tests which the device must pass and shall be designed to screen out devices

with defects that were not inspected to the full criteria of 3.4.3 (internal visual). Due to the nature of these tests,

they are not to be repeated as part of the qualification and quality conformance procedures.

Alternate 2: The requirements and conditions for use of this alternate are contained in appendix A of method

5004. This option applies to both class level B and class level S microcircuits.

3.4.3 Stabilization bake

. Stabilization bake is not required for class level S or class level B product unless specified in the

device specification or drawing.

3.4.4 Visual inspection for damage

. The manufacturer may inspect for damage after each screening step. Damaged

devices shall be removed from the lot.

3.4.5 Temperature cycling or thermal shock

. All devices shall be subjected to the requirements of temperature cycling or

thermal shock. The device specifications or drawing shall specify which screen shall be employed. Temperature cycling

shall be in accordance with MIL-STD-883, method 1010, condition C minimum. For class level B, this test may be replaced

with thermal shock in accordance with MIL-STD- 883, method 1011, condition A minimum.

3.4.6 Constant acceleration

. All devices shall be subjected to constant acceleration, in the Y

axis only, in accordance

with MIL-STD-883, method 2001, condition E (minimum). Microcircuits which are contained in packages which have an

inner seal or cavity perimeter of two inches or more in total length or have a package mass of five grams or more may be

treated in accordance with provisions below as an alternate to this procedure. Delete test condition E and replace with test

condition D. Unless otherwise specified, the stress level for large, monolithic microcircuit packages shall not be reduced

below condition D. If the stress level specified is below condition D, the manufacture shall have data to justify this reduction

and this data must be maintained and available for review by the preparing or acquiring activity. The minimum stress level

allowed is condition A.

3.4.7 Particle impact noise detection test (PIND)

. Testing to be performed in accordance with appendix A of

MIL-PRF-8535, A.4.6.3. The PIND test may be performed in any sequence after temperature cycling and prior to final

electrical test.

3.4.8 Seal (fine and gross leak) testing

. For class level S devices seal testing may be performed in any sequence

between the final electrical test and external visual, but it shall be performed after all shearing and forming operations on the

terminals. For class level B devices, fine and gross seal test shall be performed separate or together in any sequence and

order between 3.4.7 and 3.4.13 and they shall be performed after all shearing and forming operations on the terminals.

When the 100 percent seal screen cannot be performed following all shearing or forming operations (i.e., flat packs, brazed

lead packages, and chip carriers) the seal screen shall be done 100 percent prior to those shearing and forming operations

and a sample test using sample size number of 45 (C = 0) shall be performed on each inspection lot following these

operations to verify integrity. For devices with leads that are not glass-sealed and that have a lead pitch less than or equal

to 1.27 mm (0.050 inch), the sample seal test shall be performed using an acceptance criteria of a quantity (accept number)

of 15 (0). If sample fails the sample acceptance criteria, all devices in the inspection lot represented by the sample tested

shall be subjected to and pass 100 percent fine and gross leak seal screens.