MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第665页

MIL-STD-883F METHOD 5010.4 18 June 2004 15 TABLE VI. Group C t esti ng . Subgroup Class leve ls Test MIL- STD-883 Sample si ze number, accept number Referenc ed paragra ph S B Method Condi tion 1 X X X X X X X X X X X X …

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MIL-STD-883F
METHOD 5010.4
18 June 2004
14
TABLE V. Group B testing.
Subgroup
Class
level
Test
MIL-STD-883 quantity/(accept
number)
or sample
size number,
accept number
Referenced
paragraph
S B
Method Condition
1
X X Physical dimensions 2016
2 (0)
2 X
Particle impact noise
detection test
2020 A or B 15 (0) 3.4.7
3 X X Resistance to solvents 2015
3 (0)
4 X X Internal visual and
mechanical
2014
1 (0) 3.4.2
5 X X Bond strength
a. Thermocompression
b. Ultrasonic or
wedge
c. Flip-chip
d. Beam lead
2011
C or D
C or D
F
H
2 (0)
6 X X Die shear strength or
substrate attach
strength
2019
or
2027
2 (0)
7 X X Solderability 2003 Solder
temperature
245°C ±5°C
1 (0)
8 X X Seal
a. Fine
b. Gross
1014
Sample size
number = 15
C = 0
3.4.8
MIL-STD-883F
METHOD 5010.4
18 June 2004
15
TABLE VI. Group C testing
.
Subgroup
Class
levels
Test MIL-STD-883 Sample size
number,
accept number
Referenced
paragraph
S B
Method Condition
1 X
X
X
X
X
X
X
X
X
X
X
X
X
External
Temperature cycling
Mechanical shock or
constant acceleration
Seal (fine and gross)
Radiographic
Visual examination
End point electrical
2009
1010
2002
2001
1014
2012
C
100 cycles
minimum
B, Y1 axis
E, Y1 axis
Y axis
In accordance
with visual
criteria of
method 1010.
As specified
in accordance
with device
specification
Sample size
number = 15
C = 0
3.4.13
3.4.5
3.4.6
3.4.8
3.4.12
3.5.2.3
2 X X Steady-state life test
End point electrical
1005 1,000 hours
at +125°C
minimum
As specified
in accordance
with device
specification
Sample size
number = 22
C = 0
3.5.2.3
TABLE VII. Group D testing
.
Subgroup
Class Test
MIL-STD-883 Quantity/
accept
number
Referenced
paragraph
S B
Method Condition
1 X X Internal water vapor
content
5000 PPM maximum water
content at +100°C
1018
3 devices
(0 failures)
or
5 devices
(1 failure)
2 X X Moisture resistance 1004
5 (0)
3 X X Salt atmosphere 1009
5 (0)
MIL-STD-883F
METHOD 5010.4
18 June 2004
16
TABLE VIII. Group E (radiation hardness assurance tests). 1/
Test
MIL-STD-883 Class level S Class level B
Method
Condition Quantity/
accept
number
Notes
Quantity/
accept
number
Notes
Subgroup 1 2/
Neutron irradiation
a. Qualification
b. QCI
Endpoint electrical
parameters
1017
+25°C
As specified in
accordance with
device
specification
a. 11 (0)
b. 11 (0)
3
/
3
/
a. 11 (0)
b. 11 (0)
4
/
4
/
Subgroup 2 5/
Steady-state total
dose irradiation
a. Qualification
b. QCI
Endpoint electrical
parameters
1019
+25°C
Maximum supply
voltage
As specified in
accordance with
device
specification
a. 4 (0)
2 (0)
b. 4 (0)
2 (0)
a. 6
/
8
/
b. 6
/
8
/
a. 22 (0)
b. 22 (0)
7
/
7
/
1
/ Parts used for one subgroup test may not be used for other subgroups but may be used for higher levels in the same
subgroup. Total exposure shall not be considered cumulative unless testing is performed within the time limits of the
test method.
2
/ Waive neutron test for MOS IC devices except where neutron susceptibility is less than 10
13
neutrons/cm
2
(e.g.,
charge coupled devices, BICMOS, ect.). Where testing is required, the limit for neutron fluence shall be 2x10
12
neutrons/cm
2
.
3
/ Per wafer lot. If one part fails, seven additional parts may be added to the test sample with no additional failures
allowed, 18(1).
4
/ Per inspection lot. If one part fails, seven additional parts may be added to the test sample with no additional failures
allowed, 18(1).
5
/ Class level B devices shall be inspected using either the class level B quantity/accept number criteria as specified, or
by using the class level S criteria on each wafer.
6
/ Per wafer for device types with less than or equal to 4,000 equivalent transistors/chip selected from the wafer at a
radius approximately equal to two-thirds of the wafer radius, and spaced uniformly around this radius.
7
/ Per inspection lot. If one part fails, 16 additional parts may be added to the test sample with no additional failures
allowed, 38(1).
8
/ Per wafer for device types with greater than 4,000 equivalent transistor/chip selected from the wafer at a radius
approximately equal to two-thirds of the wafer radius and spaced uniformly around this radius.