MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第95页

MIL-STD-883F METHOD 1015.9 1 June 1993 1 METHOD 1015.9 BURN-IN TEST 1. PURPOSE . The burn- in tes t is perfor med for t he purpose of scr eening or el iminat ing margi nal devic es, t hose wit h inherent defect s or def …

MIL-STD-883F

METHOD 1014.11

18 June 2004

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MIL-STD-883F

METHOD 1015.9

1 June 1993

METHOD 1015.9

BURN-IN TEST

1. PURPOSE

. The burn-in test is performed for the purpose of screening or eliminating marginal devices, those with

inherent defects or defects resulting from manufacturing aberrations which cause time and stress dependent failures. In the

absence of burn-in, these defective devices would be expected to result in infant mortality or early lifetime failures under use

conditions. Therefore, it is the intent of this screen to stress microcircuits at or above maximum rated operating conditions

or to apply equivalent screening conditions, which will reveal time and stress dependent failure modes with equal or greater

sensitivity.

2. APPARATUS

. Details for the required apparatus shall be as described in method 1005.

3. PROCEDURE

. The microelectronic device shall be subjected to the specified burn-in screen test condition (see 3.1)

for the time and temperature specified (see method 5004 for the appropriate device class level) or, unless otherwise

specified, for an equivalent time and temperature combination as determined from table I (see 3.1.1 and 3.1.2). QML

manufacturers who are certified and qualified to MIL-I-38535 may modify the time or the temperature condition

independently from the regression conditions contained in table I or the test condition/circuit specified in the device

specification or standard microcircuit drawing provided the modification is contained in the manufacturers Quality

Management Plan and the “Q" certification identifier is marked on the devices. Any time-temperature combination which is

contained in table I for the appropriate class level may be used for the applicable test condition. The test conditions

(duration and temperature) selected prior to test shall be recorded and shall govern for the entire test. Lead-, stud-, or

case-mounted devices shall be mounted by the leads, stud, or case in their normal mounting configuration, and the point of

connection shall be maintained at a temperature not less than the specified ambient temperature. Pre and post burn-in

measurements shall be made as specified. Burn-in boards shall not employ load resistors which are common to more than

one device, or to more than one output pin on the same device.

3.1 Test conditions

. Basic test conditions are as shown below. Unless otherwise specified, test condition F shall not be

applied to class level S devices. Details of each of these conditions, except where noted, shall be as described in method

1005.

a. Test condition A: Steady-state, reverse bias.

b. Test condition B: Steady-state, forward bias.

c. Test condition C: Steady-state, power and reverse bias.

d. Test condition D: Parallel excitation.

e. Test condition E: Ring oscillator.

f. Test condition F: Temperature-accelerated test.

3.1.1 Test temperature

. The ambient burn-in test temperature shall be 125°C minimum for conditions A through E

(except for hybrids see table I). At the supplier's option, the test temperature for conditions A through E may be increased

and the test time reduced in accordance with table I. Since case and junction temperature will, under normal circumstances,

be significantly higher than ambient temperature, the circuit employed should be so structured that maximum rated junction

temperature for test or operation shall not exceed 200°C for class level B or 175°C for class level S (see 3.1.1.1). Devices

with internal thermal shut-down circuitry shall be handled in accordance with 3.2.3 of method 1005. The specified test

temperature is the minimum actual ambient temperature to which all devices in the working area of the chamber shall be

exposed. This shall be assured by making whatever adjustments are necessary in the chamber profile, loading, location of

control or monitoring instruments, and the flow of air or other suitable gas or liquid chamber medium. Therefore, calibration

shall be accomplished on the chamber in a fully loaded (boards need not be loaded with devices), unpowered configuration,

and the indicator sensor located at, or adjusted to reflect the coldest point in the working area.

MIL-STD-883F

METHOD 1015.9

1 June 1993

3.1.1.1 Test temperature for high power devices. Regardless of power level, devices shall be able to be burned in or

life-tested at their maximum rated operating temperature. For devices whose maximum operating temperature is stated in

terms of ambient temperature, T

, table I applies. For devices whose maximum operating temperature is stated in terms of

case temperature, T

and where the ambient temperature would cause T

to exceed +200°C (+175°C for class level S), the

ambient operating temperature may be reduced during burn-in and life test from +125°C to a value that will demonstrate a T

between +175°C and +200°C and T

equal to or greater than +125°C without changing the test duration. Data supporting

this reduction shall be available to the acquiring and qualifying activities upon request.

3.1.1.2 Test temperature for hybrid devices

. The ambient or case burn-in test temperature shall be as specified in table I,

except case temperature burn-in shall be performed, as a minimum, at the maximum operating case temperature (T

)

specified for the device. Burn-in shall be 320 hours minimum for class level S hybrids (class K). The device should be

burned in at the maximum specified operating temperature, voltage, and loading conditions as specified in the device

specification or drawing. Since case and junction temperature will, under normal circumstances, be significantly higher than

ambient temperature, the circuit should be so structured that the maximum rated junction temperature as specified in the

device specification or drawing, and the cure temperature of polymeric materials as specified in the baseline documentation

shall not be exceeded. If no maximum junction temperature is specified, a maximum of 175°C is assumed. Accelerated

burn-in (condition F) shall not be permitted. The specified test temperature shall be the minimum actual ambient or case

temperature that must be maintained for all devices in the chamber. This shall be assured by making whatever adjustments

are necessary in the chamber profile, loading, location of control or monitoring instruments and the flow of air or other

suitable gas or liquid chamber medium.

3.1.2 Temperature accelerated test details

. In test condition F, microcircuits are subjected to bias(es) at a temperature

(175°C to 250°C) which considerably exceeds the maximum rated junction temperature. At these elevated temperatures, it

is generally found that microcircuits will not operate normally as specified in their applicable acquisition documents, and it is

therefore necessary that special attention be given to the choice of bias circuits and conditions to assure that important

circuit areas are adequately biased without subjecting other areas of the circuit to damaging overstress(es). To properly

select the accelerated test conditions, it is recommended that an adequate sample of devices be exposed to the intended

high temperature while measuring voltage(s) and current(s) at each device terminal to assure that the applied electrical

stresses do not induce damaging overstress. Unless otherwise specified in the device specifications or drawings, the

minimum time-temperature combination shall be as delineated by table I. The minimum test time shall be 12 hours. The

applied voltage at any or all terminals shall be equal to the recommended operating voltage(s) at 125°C. When excessive

current flow or power dissipation would result from operation at the specified voltage(s), the applied voltage(s) at any or all

terminals may be reduced to a minimum of 50 percent of the specified voltage(s) and the testing time shall be determined in

accordance with the formula given in 3.5.6 of method 1005. Devices with internal thermal shut-down circuitry shall be

handled in accordance with 3.5.6.1 of method 1005. Thermal runaway conditions must be avoided at all times.

3.2 Measurements

. Pre burn-in measurements, when specified, or at the manufacturer's discretion when not specified,

shall be conducted prior to applying burn-in test conditions. Post burn-in measurements shall be completed within 96 hours

after removal of the devices from the specified burn-in test condition (i.e., either removal of temperature or bias) and shall

consist of all 25°C dc parameter measurements) (subgroup A-1 of method 5005, or subgroups tested in lieu of A-1 as

allowed in the most similar military device specification or standard microcircuit drawing) and all parameters for which delta

limits have been specified as part of interim (post-burn-in) electrical measurements. Delta limit acceptance, when

applicable, shall be based upon these measurements. If these measurements cannot be completed within 96 hours, for

either the standard or accelerated burn-in, the devices shall be subjected to the same test condition (see 3.1) and

temperature previously used for a minimum additional reburn-in time as specified in table I before post burn-in

measurements are made.

3.2.1 Cooldown after standard burn-in

. All devices shall be cooled to within 10°C of their power stable condition at room

temperature prior to the removal of bias. The interruption of bias for up to 1 minute for the purpose of moving the devices to

cooldown positions separate from the chamber within which burn-in testing was performed shall not be considered removal

of bias, (bias at cooldown position shall be same as that used during burn-in). Alternatively, except for linear or MOS

(CMOS, NMOS, PMOS, etc.) devices or unless otherwise specified, the bias may be removed during cooling provided the

case temperature of devices under test is reduced to a maximum of 35°C within 30 minutes after the removal of the test

conditions and provided the devices under test are removed from the heated chamber within 5 minutes following removal of

bias. All 25°C dc measurements or alternate subgroups (see 3.2) shall be completed prior to any reheating of the device(s).