Oxford-100-Cryo-DRIE-SOP-in-PDF-Format.pdf - 第10页

Oxford 100 Cryo DRIE SOP Page 10 of 10 Revision 1-060810 10.2 Process Summary 10.2.1 The Cryo DRIE parameters are as follows: Table 2, Cryo DRIE Parameters SF6 34.5sccm O2 5.5sccm ICP forward power 500W RF forward power …

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Oxford 100 Cryo DRIE SOP Page 8 of 10
Revision 1-060810
9.4.1.1 Pump down load lock.
9.4.1.2 Click on service mode.
9.4.1.3 Click on location where the wafer is located in the chamber.
9.4.1.4 Click “add wafer”.
9.4.1.5 Exit service mode.
9.4.1.6 Click on green wafer and blue arrow should appear.
9.4.1.7 Pump down load lock.
9.4.1.8 Click on center of load lock to transfer wafer to load lock.
10. Process Notes
10.1 Typical Etch Characteristics
10.1.1 The etch rate for aspect ratios less than 5:1 is approx. 1.75 um/min. For higher aspect ratios the
etch rate decreases.
Oxford 100 Cryo DRIE SOP Page 9 of 10
Revision 1-060810
Oxford 100 Cryo DRIE SOP Page 10 of 10
Revision 1-060810
10.2 Process Summary
10.2.1 The Cryo DRIE parameters are as follows:
Table 2, Cryo DRIE Parameters
SF6 34.5sccm
O2 5.5sccm
ICP forward power 500W
RF forward power 5W
He back pressure 10mT
Pressure 0mT (2-6mT)
Temperature -120 C
11. Revision History
Rev Date Originator Description of Changes
1 08 June 2010 Sam Bell