Oxford-100-Cryo-DRIE-SOP-in-PDF-Format.pdf - 第8页

Oxford 100 Cryo DRIE SOP Page 8 of 10 Revision 1-060810 9.4.1.1 Pump down load lock. 9.4.1.2 Click on service mode. 9.4.1.3 Click on location where the wafer is located in the cham ber. 9.4.1.4 Click “add wafer”. 9.4.1.5…

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8.2.4 Turn off burn box.
8.2.4.1 Follow procedures in the Ecosys Burn Box SOP to turn off the burn box.
9. Maintenance Procedures
9.1 Chamber Cleaning
9.1.1 Chamber cleaning should be done after every 3-5 hours of etching or as needed.
9.1.1.1 The cleaning recipe parameters are as follows:
Table 1, Cleaning Recipe Parameters
SF6 10sccm
O2 40sccm
ICP power 1000W
RF power 100W
He back pressure 0mT
Pressure 20mT
Temperature Room Temp.
9.2 Check He Leak Rate
9.2.1 Check chamber pressure.
9.2.2 Check icon to make sure wafer is clamped.
9.2.3 Set He pressure to 10 mT (pressure greater than 20 Torr can damage thin substrates).
9.2.4 Check He flow rate. It should be less than ?? sccm.
9.2.5 Check chamber pressure, it should have risen less than 7 mTorr.
9.3 Check Chamber Leak Rate
9.3.1 Click on Chamber 1.
9.3.2 Click on leak detection.
9.3.3 Pump down over night.
9.3.4 Run leak test (step time) for 20 minutes.
9.3.5 Log interval 5 sec.
9.3.6 Pumping to 7e-7 Torr
9.3.7 Click return to process.
9.4 Troubleshooting
9.4.1 To remove clamped wafer when the system doesn’t recognize there is a wafer in the chamber:
Oxford 100 Cryo DRIE SOP Page 8 of 10
Revision 1-060810
9.4.1.1 Pump down load lock.
9.4.1.2 Click on service mode.
9.4.1.3 Click on location where the wafer is located in the chamber.
9.4.1.4 Click “add wafer”.
9.4.1.5 Exit service mode.
9.4.1.6 Click on green wafer and blue arrow should appear.
9.4.1.7 Pump down load lock.
9.4.1.8 Click on center of load lock to transfer wafer to load lock.
10. Process Notes
10.1 Typical Etch Characteristics
10.1.1 The etch rate for aspect ratios less than 5:1 is approx. 1.75 um/min. For higher aspect ratios the
etch rate decreases.
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Revision 1-060810