IPC CH-65B CHINESE.pdf - 第89页

5. Cvijanovich, G. ( 1980 ) . Conductivities and Electroltic Properties of Absorbed Layers of W ater . Proce- dur es of BS/T ADC W orks, Moisture Measur e T echnology for Hermitically Semiconductor Devices II . Universi…

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7.6 和电路板清洁度 无铅锡须是备领域。大量的研究了包晶须成的化学和
物理的参数特性。金暴露湿时,在密度水成一个
25
密度
量的使力上锡须减轻锡内
力。值得注意这些锡须使导线桥造路。
26
研究人员发现大量锡暴露子污染环境时,锡须从中长出。
23242526
为一个基于焊
成的实当暴露铜突然与在相锡里时,腐蚀作显著
26
大可能
部,在这里助焊剂残留物
26
锡须和小穿过助焊剂残留
出并长到了140μm腐蚀树枝状空间。在大扩散耗尽
中的耗尽的区许经历力。下面和金之
长创件。
23
焊接期间当锡时,锡膏中的助焊剂出。含大量子和子的助焊剂残留物
产生晶须,而污染区域没晶须长。
23
为了好地解这一影Snugovsky et al.设计了一个
实验来测试污染锡须成的影个实验评估接收态元器件、清洗元器件、被氯
硫酸钠溶液污染的元器件。元器暴露85° C[185° F]/85%相对湿500小时。果接
收态元器件有晶须清洗元器晶须污染的元器件有长的晶须。第二部分测试组件用
SAC305组装到测试基板上。组装后被清洗的元器晶须,而接收
清洗使用的
晶须故意污染的元器件会导致长的晶须作者总结为,元器件的使用和组装清洗
降低了在无铅组装中晶须成的
23
Hillman2010于评估由氯污染物引发的锡须长的研究。在有力的板上电镀锡
在三个不同氯溶液放置72小时,接着高温高湿条处理1被浸入一个和的
溶液中,2被浸入和的溶液中,3浸入0.001M溶液中。测试
85° C[185° F]85%的相对湿中。在五个的位
用电子扫描检查数据
发现晶须子污染平影导致大的晶须密度
24
研究发现了晶须的影范围和子污染程腐蚀的关湿子污染导致腐蚀
力。第二个影响是助焊剂残留量及
7.7 海洋腐蚀 显著降低子组装产品大气污染暴露在含
中。含量的(来。含气对保护金属表面有
性。电子产品进入环境
岸警或者
子对电子电路化学残留的影Pauls and Munson出版的Process Rx column of Circuits
Assembly1997年到2000年的月案例研究。参PaulsMunson的其[29][34]
有用的。
考⽂
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5. Cvijanovich, G. (1980). Conductivities and Electroltic Properties of Absorbed Layers of Water. Proce-
dures of BS/TADC Works, Moisture Measure Technology for Hermitically Semiconductor Devices II.
University of Maryland, College Park, MD, 20742.
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8 组装残留物/清洗的考虑要素
8.1 范围 助焊剂料合组成的组装材料,可据元器件的装、、组装类型
元器的不考虑焊接和清洗时,组装残留物取决于焊接方法选择和有
铅或者无铅焊料的使用。选择适合于焊接方法料的助焊剂
确定使用何清洗方法
的清洁取决使环境,在情况规定量要求
电子组装制程的范围单到复杂,并及到广范围的材料。制程中的步骤中所
使用的材料都会对组件有影大的影响是化学物质残留在组件表面。考虑的材料包
助焊剂、清洗溶液、标掩蔽材料、元器残留物残留物。本章节涵盖
数生产制程中
许多普使用的材料。
8.2 ⽬的 本章节的目的讨论在印制电路板生产期间及在组装制程期间残留物
过焊接清洗时。之外讨论了关残留物检测残留物原因
防措施
8.3 术语和定义
8.3.1 性助焊剂: 种酸无机、有机或者水溶性有机助焊剂溶液
8.3.2 活性松⾹助焊剂: 量的有物或者
8.3.3 活化剂: 助焊剂
焊接表面表面能力的物质
8.3.4 合剂: 物体固连或接物质。在表面装中,环氧粘
表面元器粘附板上。
8.3.5 吸附污染物: 或者粘附在材料表面的污染
8.3.6 导体中心距离
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No reproduction or networking permitted without license from IHS
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