m220_383_02_process_manual工艺手册 - 第3页

TABLE OF CONTENTS P ROCESS M ANU AL I Preface ..................................................................................... V Tempress documentation set ...........................................................…

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TABLE OF CONTENTS
P
ROCESS MANUAL
I
Preface ..................................................................................... V
Tempress documentation set.................................................................V
User Definition ......................................................................................VI
Notes, Cautions and Warnings ............................................................VII
Contents description ...........................................................................VIII
Revision History..................................................................................VIII
1. Introduction .......................................................................1-1
1.1 General.....................................................................................1-1
1.2 Process engineer area description............................................ 1-2
2. Safety .................................................................................2-2
2.1 Emergency Off (EMO) .............................................................. 2-2
2.2 Alarm Signals............................................................................ 2-2
2.2.1 Buzzer / LED .............................................................2-2
2.2.2 Touchscreen.............................................................. 2-2
2.2.3 Light tower.................................................................2-3
2.2.4 TSC Alarm menu....................................................... 2-3
2.3 Light tower signal description.................................................... 2-3
2.4 Toxic Material ...........................................................................2-5
2.5 Safety measures....................................................................... 2-5
3. Process setup and acceptance.....................................2.5-1
3.1 Process recipe setup procedure ............................................ 3.1-1
3.1.1 Introduction............................................................. 3.1-1
3.1.2 6 steps to a process recipe..................................... 3.1-1
3.1.3 Recommended command sequence...................... 3.1-2
3.1.4 Modifying the default Tempress recipe...................3.1-3
3.2 Process recipe startup and fine-tuning................................... 3.2-1
3.2.1 Introduction............................................................. 3.2-1
3.2.2 Prerequisites........................................................... 3.2-1
3.2.3 Initial settings.......................................................... 3.2-1
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3.2.4 Further fine-tuning .................................................. 3.2-2
3.3 Alarm handling with Branch and Abort commands ................ 3.3-1
3.3.1 Introduction............................................................. 3.3-1
3.3.2 Do nothing with an alarms......................................3.3-1
3.3.3 Handling alarms with the Branch command ........... 3.3-1
3.3.4 Handling alarms with the Abort command.............. 3.3-2
3.3.5 Recipe example: LPCVD Nitride abort recipe......... 3.3-3
3.4 Process acceptance conditions ............................................. 3.4-1
3.4.1 Introduction............................................................. 3.4-1
3.4.2 Default process test conditions............................... 3.4-4
4. Process description..........................................................4-1
4.1 Nitride from NH
3
and SiH
2
Cl
2
................................................. 4.1-1
4.1.1 Basic configuration ................................................. 4.1-1
4.1.2 Description.............................................................. 4.1-1
4.1.3 Process result indication......................................... 4.1-2
4.1.4 Startup parameters for processing.......................... 4.1-2
4.1.5 Recommended cleaning interval ............................ 4.1-3
4.1.6 Gas schematic example: LPCVD siliconnitride....... 4.1-4
4.1.7 Recipe example: LPCVD siliconnitride from SiH
2
Cl
2
and
NH
3
4.1-5
4.1.8 Troubleshooting a standard-nitride process............4.1-8
4.1.9 NH
4
Cl vapor pressure curve................................... 4.1-9
4.2 Flat Polycrystalline Si from SiH
4
............................................. 4.2-1
4.2.1 Basic configuration ................................................. 4.2-1
4.2.2 Description.............................................................. 4.2-1
4.2.3 Process result indication......................................... 4.2-2
4.2.4 Startup parameters for processing.......................... 4.2-2
4.2.5 Recommended cleaning interval ............................ 4.2-2
4.2.6 Gas schematic example: LPCVD Flat poly.............4.2-4
4.2.7 Recipe example: LPCVD Flat poly-silicon from SiH
4
4.2-
5
4.2.8 Troubleshooting a flat poly process........................ 4.2-8