m220_383_02_process_manual工艺手册 - 第31页

PROCESS SETUP AND ACCEPTANCE P ROCESS M ANU AL 3.4-6 3.4.2.3 Tempress Systems, Inc. LPCVD processes LP-01 Ramped poly test thickness: 3000Å test temperature: 625 o C (ramped) time indication: 30 min base: 1000Å dryoxide …

100%1 / 91
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-5
base: bare Si wafer
testmethod: ellipsometer
Atm-06 Pyrogenic oxidation + liquid cleaning
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-07 reserved
Atm-08 POCl
3
diffusion
Test sheet resistivity: 8 or 30 ohm/square
test temperature: 900
o
C deposition - 1000 drive-in
o
C
time indication: 30 min – 30 min
base: bare Si wafer
testmethod: four-point probe
Atm-09 reserved
Atm-10 reserved
Atm-11 reserved
Atm-12 Wet oxidation H
2
O bubbler
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-13 Wet oxidation H
2
O injection
Equipment: Tempress Systems, Inc. water injection
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-6
3.4.2.3 Tempress Systems, Inc. LPCVD processes
LP-01 Ramped poly
test thickness: 3000Å
test temperature: 625
o
C (ramped)
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer
LP-02 Flat poly
test thickness: 3000Å
test temperature: 610
o
C
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer
LP-03 Sipos
test thickness: 2000Å
test temperature: 670
o
C (ramped)
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: incremental thickness/mass method or ellipsometer
LP-04 Nitride
test thickness: 900Å (blue)
test temperature: 800
o
C (ramped)
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-04s Low stress nitride
test thickness: 3000Å
test temperature: 850
o
C
time indication: 30 min
test refractive index: 2.15
test stress: <= 200MPa tensile
base: bare Si wafer
testmethod: ellipsometer, curvature
LP-05 Oxynitride
test thickness: 900Å
test temperature: 800
o
C
time indication: 30 min
test refractive index: 1.8
base: bare Si wafer
testmethod: ellipsometer
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-7
LP-06 undoped TEOS
test thickness: 2000Å
test temperature: 725
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-07 undoped LTO
test thickness: 1500 Å
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-08 HTO
test thickness: 900 Å
test temperature: 900
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-09 Phosphorous doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-10 Boron doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-11 reserved
LP-12 reserved
LP-13 reserved