m220_383_02_process_manual工艺手册 - 第33页
PROCESS SETUP AND ACCEPTANCE P ROCESS M ANU AL 3.4-8 0 LP-15 BPSG TEOS test thickness: 3000 Å dopant concentrati on: 4%B, 4%P test temperature: 680 o C time indication: 30 min base: bare Si wafer testmethod: ellipsomete …
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-7
LP-06 undoped TEOS
test thickness: 2000Å
test temperature: 725
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-07 undoped LTO
test thickness: 1500 Å
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-08 HTO
test thickness: 900 Å
test temperature: 900
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-09 Phosphorous doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-10 Boron doped poly
test thickness: 5000Å
test temperature: 600
o
C
time indication: 400 min
test sheet resistivity: 20 ohm/square (after 30 min 900
o
C N
2
anneal)
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer (thickness), four-point probe (sheet resistivity)
LP-11 reserved
LP-12 reserved
LP-13 reserved
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-8
0
LP-15 BPSG TEOS
test thickness: 3000 Å
dopant concentration: 4%B, 4%P
test temperature: 680
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-16 PSG LTO
test thickness: 2000 Å
dopant concentration: 8%P
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-17 reserved
LP-18 BPSG LTO
test thickness: 2000 Å
dopant concentration: 4%B, 4%P
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-19 Thantalum oxide
test thickness: 600 Å
test temperature: 400
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-20 reserved
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-9