m220_383_02_process_manual工艺手册 - 第34页
PROCESS SETUP AND ACCEPTANCE P ROCESS M ANU AL 3.4-9
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-8
0
LP-15 BPSG TEOS
test thickness: 3000 Å
dopant concentration: 4%B, 4%P
test temperature: 680
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-16 PSG LTO
test thickness: 2000 Å
dopant concentration: 8%P
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-17 reserved
LP-18 BPSG LTO
test thickness: 2000 Å
dopant concentration: 4%B, 4%P
test temperature: 425
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer (thickness), SIMS (dopant)
LP-19 Thantalum oxide
test thickness: 600 Å
test temperature: 400
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-20 reserved
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-9
PROCESS DESCRIPTION
P
ROCESS MANUAL
4-1
4.Process description
A variety of guaranteed processes are available on the Tempress Diffusion systems, including:
Atmospheric
• Anneal
• Dry Oxidation (with or without TransLC
®
cleaning)
• Wet Oxidation (with or without TransLC
®
cleaning)
• POCl
3
Low pressure
• Ramped Poly
• Flat Poly
• Nitride
• TEOS
• LTO
• Ta
2
O
5
Because of the flexibility of the Tempress Systems Inc. systems variations on these processes are
available as well and will be manufactured on customer request.