m220_383_02_process_manual工艺手册 - 第5页

TABLE OF CONTENTS P ROCESS M ANU AL III 4.3 Silicondioxide (LTO SiO 2 ) from SiH 4 and O 2 .......................... 4.3-1 4.3.1 Basic configuration ................................................. 4.3-1 4.3.2 Descript…

100%1 / 91
TABLE OF CONTENTS
P
ROCESS MANUAL
II
3.2.4 Further fine-tuning .................................................. 3.2-2
3.3 Alarm handling with Branch and Abort commands ................ 3.3-1
3.3.1 Introduction............................................................. 3.3-1
3.3.2 Do nothing with an alarms......................................3.3-1
3.3.3 Handling alarms with the Branch command ........... 3.3-1
3.3.4 Handling alarms with the Abort command.............. 3.3-2
3.3.5 Recipe example: LPCVD Nitride abort recipe......... 3.3-3
3.4 Process acceptance conditions ............................................. 3.4-1
3.4.1 Introduction............................................................. 3.4-1
3.4.2 Default process test conditions............................... 3.4-4
4. Process description..........................................................4-1
4.1 Nitride from NH
3
and SiH
2
Cl
2
................................................. 4.1-1
4.1.1 Basic configuration ................................................. 4.1-1
4.1.2 Description.............................................................. 4.1-1
4.1.3 Process result indication......................................... 4.1-2
4.1.4 Startup parameters for processing.......................... 4.1-2
4.1.5 Recommended cleaning interval ............................ 4.1-3
4.1.6 Gas schematic example: LPCVD siliconnitride....... 4.1-4
4.1.7 Recipe example: LPCVD siliconnitride from SiH
2
Cl
2
and
NH
3
4.1-5
4.1.8 Troubleshooting a standard-nitride process............4.1-8
4.1.9 NH
4
Cl vapor pressure curve................................... 4.1-9
4.2 Flat Polycrystalline Si from SiH
4
............................................. 4.2-1
4.2.1 Basic configuration ................................................. 4.2-1
4.2.2 Description.............................................................. 4.2-1
4.2.3 Process result indication......................................... 4.2-2
4.2.4 Startup parameters for processing.......................... 4.2-2
4.2.5 Recommended cleaning interval ............................ 4.2-2
4.2.6 Gas schematic example: LPCVD Flat poly.............4.2-4
4.2.7 Recipe example: LPCVD Flat poly-silicon from SiH
4
4.2-
5
4.2.8 Troubleshooting a flat poly process........................ 4.2-8
TABLE OF CONTENTS
P
ROCESS MANUAL
III
4.3 Silicondioxide (LTO SiO
2
) from SiH
4
and O
2
.......................... 4.3-1
4.3.1 Basic configuration ................................................. 4.3-1
4.3.2 Description.............................................................. 4.3-1
4.3.3 Startup parameters for processing.......................... 4.3-2
4.3.4 Recommended cleaning interval ............................ 4.3-2
4.3.5 Process result indication......................................... 4.3-3
4.3.6 Gas schematic example: LPCVD LTO.................... 4.3-4
4.3.7 Recipe example: LPCVD silicondioxide from LTO SiH
4
and O
2
4.3-5
4.3.8 Troubleshooting an LTO process ........................... 4.3-8
5. Operation Instructions...................................................4.3-1
5.1 Load or Unload process wafers............................................. 5.1-1
5.1.1 Load process wafers............................................... 5.1-1
5.1.2 Unload wafers......................................................... 5.1-1
5.2 Login TSC-2........................................................................... 5.2-1
5.2.1 TSC-2..................................................................... 5.2-1
5.3 Selecting a new process recipe ............................................. 5.3-1
5.3.1 Touchscreen........................................................... 5.3-1
5.3.2 TSC-2..................................................................... 5.3-3
5.4 Start/Continue a new process recipe..................................... 5.4-1
5.4.1 Touchscreen........................................................... 5.4-1
5.4.2 TSC-2..................................................................... 5.4-2
5.5 Stop a running process recipe ............................................... 5.5-1
5.5.1 Touchscreen........................................................... 5.5-1
5.5.2 TSC-2..................................................................... 5.5-2
5.6 Abort a running process recipe.............................................. 5.6-1
5.6.1 Touchscreen........................................................... 5.6-1
5.6.2 TSC-2..................................................................... 5.6-2
5.7 Edit ‘Variable Process Command’.......................................... 5.7-1
5.7.1 Touchscreen........................................................... 5.7-1
5.7.2 TSC-2..................................................................... 5.7-3
TABLE OF CONTENTS
P
ROCESS MANUAL
I
V
5.8 Clear Alarms.......................................................................... 5.8-2
5.8.1 Required action....................................................... 5.8-2
5.8.2 Touchscreen........................................................... 5.8-2
5.8.3 TSC-2..................................................................... 5.8-3
5.9 Write/Edit process recipe....................................................... 5.9-2
5.9.1 Touchscreen........................................................... 5.9-2
5.9.2 TSC-2..................................................................... 5.9-3
5.10 Edit graphical image............................................. 5.10-2
5.10.1 Touchscreen......................................................... 5.10-2
5.10.2 TSC-2................................................................... 5.10-2
5.11 Logging process data ........................................... 5.11-2
5.11.1 TSC-2 (only) ......................................................... 5.11-2