Utah-94-721002-System-Manual.pdf - 第144页

mä~ëã~ä~Ä = lñÑç êÇ=fåë íêìãÉåí ë=m ä~ë ã~=qÉÅÜåçäçÖó= System Manual Contents 1 Introduction ...............................................................................................................................…

100%1 / 362
System Manual= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= mä~ëã~ä~Ä
Plasmalab Process Guide
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 1 of 30 Issue 1: December 03
mä~ëã~ä~Ä= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= System Manual
Contents
1 Introduction......................................................................................................................................3
1.1 About this guide........................................................................................................................................3
1.2 Health and safety ......................................................................................................................................3
1.3 Terminology...............................................................................................................................................3
1.4 Document structure...................................................................................................................................3
2 The clean room.................................................................................................................................4
3 Processes...........................................................................................................................................5
3.1 General.......................................................................................................................................................5
3.2 RIE processes ..............................................................................................................................................6
3.2.1 RIE operating parameter ranges ....................................................................................................6
3.2.2 ICP operating parameter ranges ....................................................................................................7
3.2.3 Low-pressure strike facility .............................................................................................................8
3.2.4 DC bias..............................................................................................................................................8
3.2.4.1 Electronegative gas mixtures ......................................................................................................8
3.2.4.2 ICP sources ....................................................................................................................................9
3.2.4.3 DC bias polarity ............................................................................................................................9
3.2.4.4 DC bias control .............................................................................................................................9
3.2.4.5 DC bias reproducibility.................................................................................................................9
3.2.5 Arcing / pitting...............................................................................................................................10
3.2.6 Etch process chamber cleaning recipes........................................................................................10
3.2.7 Sample cooling / gluing.................................................................................................................11
3.2.8 Use of helium backing for effective process temperature control............................................12
3.2.8.1 Scope...........................................................................................................................................12
3.2.8.2 Purpose........................................................................................................................................12
3.2.8.3 Simple Method to check Helium backing.................................................................................12
3.2.9 Gases with low vapour pressure...................................................................................................14
3.2.10 Endpoint detection techniques ....................................................................................................14
3.2.10.1 Optical emission spectroscopy................................................................................................14
3.2.10.2 Laser interferometry...............................................................................................................15
3.2.10.3 Comparison of OES and laser endpoint techniques.............................................................15
3.2.10.4 Typical OES endpoint wavelengths........................................................................................16
3.2.10.5 Endpoint algorithm examples................................................................................................16
3.2.11 Gas calibration factors...................................................................................................................17
3.2.12 Exhaust emissions ..........................................................................................................................17
3.3 PECVD processes......................................................................................................................................18
3.3.1 PECVD operating parameter ranges ............................................................................................18
3.3.2 Low frequency matching ..............................................................................................................18
3.3.3 Premature flaking of chamber wall / showerhead material ......................................................19
3.3.4 PECVD particles..............................................................................................................................20
3.3.5 Enlarging of showerhead holes....................................................................................................21
3.3.6 Optical emission endpoint detector for chamber clean process................................................21
3.4 Process troubleshooting..........................................................................................................................23
3.4.1 Partial process failure....................................................................................................................23
3.4.1.1 Example problems......................................................................................................................23
3.4.1.2 Typical causes..............................................................................................................................23
3.4.2 Total process failure ......................................................................................................................23
3.4.2.1 Example problems......................................................................................................................23
3.4.2.2 Typical causes..............................................................................................................................23
4 Glossary of terms...........................................................................................................................25
5 OIPT locations worldwide..............................................................................................................30
Process Information (Information contained in this document is confidential)
Issue 1: December 03 Page 2 of 30 Printed: 08 January 2006 09:37
System Manual= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= mä~ëã~ä~Ä
N= fåíêçÇìÅíáçå=
NKN= ^Äçìí=íÜáë=ÖìáÇÉ=
This guide gives information about plasma processes based on Oxford Instruments Plasma Technology’s
(OIPT) long experience in the semiconductor industry.
The scope of the guide is to provide a general introduction to process strategies and common process
problems, and has not been prepared for a particular version of hardware. The information is presented
to help users obtain optimum results from their specific process applications using Plasmalab systems.
To ensure that the information is as comprehensive and up-to-date as possible, it has been collated from
the following sources within OIPT:
In-house Applications Laboratory
1
(Process Lab reports, manager’s notes, customer feedback etc.).
Service Department (customer feedback, on-site experience etc.)
Technology Department (external information sources, design reviews, customer liaison, etc.)
NKO= eÉ~äíÜ=~åÇ=ë~ÑÉíó=
For health and safety information, see Section 1 (Health and Safety) of your Plasmalab system manual.
The customer is always responsible for:
(A) Delivery of process gases to the tool.
(B) Removal of exhaust gases from the tool.
(C) Maintaining a safe system of work in using and maintaining the tool.
NKP= qÉêãáåçäçÖó=
Material presented within this guide is aimed at users who have knowledge of plasma processes and the
terms used. However, if you come across an unfamiliar term, please refer to Section 4 (Glossary of Terms).
NKQ= açÅìãÉåí=ëíêìÅ íìêÉ=
The text in this document is logically divided into general information and specific information relevant
to the main process types (RIE and PECVD) and is generally applicable to all Plasmalab systems. Where
information is only applicable to a specific system, e.g. the Plasmalab 80 Plus RIE, this is stated.
1
The Application Laboratory is a purpose-built clean room facility housing examples of all of our
Plasmalab systems for research and development purposes. Each of these systems is installed in
accordance with our standard installation data documents supplied to customers for each system type.
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 3 of 30 Issue 1: December 03