Utah-94-721002-System-Manual.pdf - 第147页
System Manual = lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~= qÉÅÜåçäçÖó= mä~ëã~ä~Ä P= mêçÅÉëëÉë= PKN= dÉåÉê~ä= Recommendations for all systems, i.e. etch & deposition. Day-to-day operation • It is strongly recommended that the tools a…
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It is recommended that the OIPT process tool(s) are installed in a ‘clean room’ that meets the following
requirements:
• HEPA filtered air conditioning system, ideally laminar flow.
• Clean room walls/ceiling/flooring constructed from low particulate materials.
• Work areas shall remain free from waste materials.
• Covered waste containers shall be provided and emptied regularly.
• Gangways shall remain clear at all times.
• Access to H&S / COSHH data sheets shall be maintained at all times.
• Access to fire protection equipment shall be maintained at all times..
• Appropriate warning labels shall be provided where required.
• Samples shall be covered where practicable, particularly at the end of a working shift.
• No eating /drinking or smoking shall be permitted in the clan room/laboratory.
• Restricted access shall be maintained and a list of authorised persons shall be displayed outside
the processing areas. All other persons entering the area shall be escorted at all times.
• Items entering the processing area shall be inspected for cleanliness prior to entry.
• Non-essential items shall be precluded from the processing areas.
• Non-essential equipment or documentation shall not be stored on the floor area.
• Prior to entering the processing rooms, protective clothing shall be worn and shall constitute at
least over-shoes, coat and hat. These shall be made available within the laboratory access room
and will be replaced at a controlled frequency. A bench shall be provided to aid dressing with
protective clothing. The bench area immediately adjacent to the entry door to the laboratory shall
contain a tack mat to further prevent contamination ingress. Over shoes must not come into
contact with the area that has been used for day shoes.
• Cleaning of the processing areas shall be performed with suitably filtered vacuum equipment.
• A cleaning programme shall be established and evidence of compliance maintained for audit
purposes.
• All samples in current use or in temporary storage within the area shall be identified.
• Non-conforming samples shall be identified and physically segregated from acceptable work.
• Gloves shall be worn when handling unprotected samples.
• Unused tooling / equipment shall be stored in a manner to prevent damage and deterioration.
• It shall remain the responsibility of the users to ensure that tooling / equipment remains suitable
for its intended purpose.
For Health & Safety guidelines, refer to Section 1 (Health & Safety) of your Plasmalab system manual.
For services required, refer to OIPT Services Specifications and the relevant Installation Data document for
your Plasmalab system.
Process Information (Information contained in this document is confidential)
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Recommendations for all systems, i.e. etch & deposition.
Day-to-day operation
• It is strongly recommended that the tools are left switched on and pumping continuously (i.e. do
not switch off system or pumps). This ensures the maximum lifetime for system and pumps and
optimum process repeatability.
• Datalogging of each run is strongly recommended to allow the system to maintain full records of
all process runs. Items to monitor regularly via datalogs are as follows:
APC valve angle during process - if this is different from original/earlier data it indicates MFC
and/or pumping problems.
RF reflected power during process - indicates matching or striking problems.
DC bias readings without a wafer in chamber (for etch tools only). This may identify faulty
generator, loss of power in matching unit or shorting of electrode.
RF Automatch capacitor positions (if available) – for checking reliability of RF matching.
Weekly checks
• Leak-up rate - APC closed, measure rate of pressure rise: should be <1mTorr/minute.
• Partial pressure checks - APC fully open, measure pressure versus flow for all MFCs individually:
see relevant calibration graph. This will identify problems with MFCs or pumping.
• Fill rates (if possible), i.e. measure rate of pressure rise with APC closed (can be performed using
leak check software, if present), for each gas at a range of flow rates, and in particular at the
flow rates of the processes in use. This may not be possible for very high flow rates (i.e.
deposition processes) and is not recommended for flammable or pyrophoric gases. This will
identify problems with MFCs or APC/gate valve seals.
• Pumpdown times from vent to moderate pressure e.g. 50mTorr. For example, this would be
typically 18 to 20 seconds for a roots/ rotary system (e.g. standard deposition tool). This will
identify problems with pumping performance. For load locked chambers, this check would be
performed less frequently, e.g. only when the chamber is vented for maintenance.
Process Information (Information contained in this document is confidential)
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For an RIE tool the typical process operating ranges are:
Total gas flows = 10 to 150 sccm. The maximum flow depends on type of pumps fitted to the system i.e.
their maximum flow capacity, their pumping performance, and the required operating pressure. If you
need to use a low pressure, you may have to limit the flow rate to achieve this.
Pressure = 5 to 500mTorr. Below 50mTorr, the plasma may not strike easily (or with sufficient stability)
for certain gases and power levels, so you need to check this and adjust the process accordingly, since
operating the system without a plasma could cause damage. This is because it is likely to cause a high
reflected power, or dumping of power into the matching unit. It is always essential to check for a plasma.
You can use the ‘low pressure strike’ feature in the software to allow easier striking for low pressure
processes. For certain flow/pressure combinations, the pressure controller may have difficulty in
maintaining a constant pressure, therefore this may also be a determining factor in the flow/pressure
used.
RF power = typically 20W to 400W (or up to 1200W for RIE System133 or RIE 800 Plus). A plasma may not
strike easily for low power levels for certain gases. You will need to check this and adjust the process
accordingly, since operating the system without a plasma could cause damage. It is always important to
have a cover plate (typically quartz or graphite) on the RIE electrode to protect it from sputter etch
damage, particularly when operating with high RF powers and therefore high DC biases.
Helium pressure (if applicable) = 0 to 30Torr. Depends on the cooling efficiency required (some
processes benefit from no cooling) and the maximum tolerable helium leakage.
Temperature is limited by the operating range of the electrode or its heater/chiller, depending on type
of electrode or heater/chiller used.
NOTES:
(A) The system base pressure will be approaching 10
-6
Torr when measured using the Penning gauge.
However, the time taken to reach this pressure will depend on whether the chamber has recently
been vented to atmosphere and the cleanliness of the chamber walls. If the process chamber /
electrodes are anodised, the time will increase as the anodised surfaces will take longer to outgas
compared with bare metal surfaces.
(B) Operating with chlorine-based processes can cause damage to the electrode unless it is protected
with a cover plate (or dummy wafer in a tool with wafer clamping).
(C) Operating with a high reflected power (>5% of forward power) is not advised, as this will cause
damage to the matching unit or RF generator. To reduce the high reflected power, adjust the
process parameters or re-tune the matching unit.
Process Information (Information contained in this document is confidential)
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