Utah-94-721002-System-Manual.pdf - 第148页
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Recommendations for all systems, i.e. etch & deposition.
Day-to-day operation
• It is strongly recommended that the tools are left switched on and pumping continuously (i.e. do
not switch off system or pumps). This ensures the maximum lifetime for system and pumps and
optimum process repeatability.
• Datalogging of each run is strongly recommended to allow the system to maintain full records of
all process runs. Items to monitor regularly via datalogs are as follows:
APC valve angle during process - if this is different from original/earlier data it indicates MFC
and/or pumping problems.
RF reflected power during process - indicates matching or striking problems.
DC bias readings without a wafer in chamber (for etch tools only). This may identify faulty
generator, loss of power in matching unit or shorting of electrode.
RF Automatch capacitor positions (if available) – for checking reliability of RF matching.
Weekly checks
• Leak-up rate - APC closed, measure rate of pressure rise: should be <1mTorr/minute.
• Partial pressure checks - APC fully open, measure pressure versus flow for all MFCs individually:
see relevant calibration graph. This will identify problems with MFCs or pumping.
• Fill rates (if possible), i.e. measure rate of pressure rise with APC closed (can be performed using
leak check software, if present), for each gas at a range of flow rates, and in particular at the
flow rates of the processes in use. This may not be possible for very high flow rates (i.e.
deposition processes) and is not recommended for flammable or pyrophoric gases. This will
identify problems with MFCs or APC/gate valve seals.
• Pumpdown times from vent to moderate pressure e.g. 50mTorr. For example, this would be
typically 18 to 20 seconds for a roots/ rotary system (e.g. standard deposition tool). This will
identify problems with pumping performance. For load locked chambers, this check would be
performed less frequently, e.g. only when the chamber is vented for maintenance.
Process Information (Information contained in this document is confidential)
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For an RIE tool the typical process operating ranges are:
Total gas flows = 10 to 150 sccm. The maximum flow depends on type of pumps fitted to the system i.e.
their maximum flow capacity, their pumping performance, and the required operating pressure. If you
need to use a low pressure, you may have to limit the flow rate to achieve this.
Pressure = 5 to 500mTorr. Below 50mTorr, the plasma may not strike easily (or with sufficient stability)
for certain gases and power levels, so you need to check this and adjust the process accordingly, since
operating the system without a plasma could cause damage. This is because it is likely to cause a high
reflected power, or dumping of power into the matching unit. It is always essential to check for a plasma.
You can use the ‘low pressure strike’ feature in the software to allow easier striking for low pressure
processes. For certain flow/pressure combinations, the pressure controller may have difficulty in
maintaining a constant pressure, therefore this may also be a determining factor in the flow/pressure
used.
RF power = typically 20W to 400W (or up to 1200W for RIE System133 or RIE 800 Plus). A plasma may not
strike easily for low power levels for certain gases. You will need to check this and adjust the process
accordingly, since operating the system without a plasma could cause damage. It is always important to
have a cover plate (typically quartz or graphite) on the RIE electrode to protect it from sputter etch
damage, particularly when operating with high RF powers and therefore high DC biases.
Helium pressure (if applicable) = 0 to 30Torr. Depends on the cooling efficiency required (some
processes benefit from no cooling) and the maximum tolerable helium leakage.
Temperature is limited by the operating range of the electrode or its heater/chiller, depending on type
of electrode or heater/chiller used.
NOTES:
(A) The system base pressure will be approaching 10
-6
Torr when measured using the Penning gauge.
However, the time taken to reach this pressure will depend on whether the chamber has recently
been vented to atmosphere and the cleanliness of the chamber walls. If the process chamber /
electrodes are anodised, the time will increase as the anodised surfaces will take longer to outgas
compared with bare metal surfaces.
(B) Operating with chlorine-based processes can cause damage to the electrode unless it is protected
with a cover plate (or dummy wafer in a tool with wafer clamping).
(C) Operating with a high reflected power (>5% of forward power) is not advised, as this will cause
damage to the matching unit or RF generator. To reduce the high reflected power, adjust the
process parameters or re-tune the matching unit.
Process Information (Information contained in this document is confidential)
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For an ICP 180 or ICP 380 the typical process operating ranges are:
Total gas flows = 10 to 200sccm. The maximum flow depends on type of turbo pump, i.e. its maximum
flow capacity, and the required operating pressure. If you need to use a low pressure, you may have to
limit the flow rate to achieve this.
Pressure = 1 to 60mTorr. Below 5mTorr and above 20mTorr the plasma may not strike easily (or with
sufficient stability) for certain gases and power levels, so you need to check this and adjust the process
accordingly, since operating the system without a plasma either on the substrate electrode or in the ICP
tube could cause damage. This is because it is likely to cause a high reflected power, or dumping of power
into matching unit. It is always essential to check for a plasma in both regions. You can use the ‘low
pressure strike’ feature in the software to allow easier striking for low pressure processes. For certain
flow/pressure combinations, the pressure controller may have difficulty in maintaining a constant
pressure, therefore this may also be a determining factor in the flow/pressure used.
ICP power = approximately 200W to 2500W (or 4000W for ICP 380). The minimum power level will be
dependent on how easily the plasma strikes for certain gases. You will need to check this and adjust
process accordingly, since operating system without a plasma either on the substrate electrode or in the
ICP tube could cause damage.
The maximum ICP power limit is set by the power rating of the RF generator. However, most processes
perform well with only moderate ICP power levels. This also helps to avoid excessive substrate heating.
Substrate electrode RF power = typically 5W to 400W. A plasma may not strike easily for low power
levels for certain gases. You will need to check this and adjust the process accordingly, since operating the
system without a plasma either on the substrate electrode or in the ICP tube could cause damage.
Helium pressure = 0 to 30Torr. Depends on the cooling efficiency required (some processes benefit from
no cooling) and the maximum tolerable helium leakage.
Temperature is limited by the operating range of the electrode or its heater/chiller, depending on type
of electrode or heater/chiller used.
NOTES:
(A) The system base pressure will be of approaching 10
-6
Torr or better when measured using the
Penning gauge. However, the time taken to reach this pressure will depend on whether the
chamber has recently been vented to atmosphere and the cleanliness of the chamber walls. If the
process chamber / electrodes are anodised, the time will increase as the anodised surfaces will take
longer to outgas compared with bare metal surfaces.
(B) Operating with chlorine based processes can cause damage to the electrode unless it is protected
with a dummy wafer.
(C) Operating with a high-reflected power (>5% of forward power) is not advised, as this will cause
damage to the matching unit or RF generator. To reduce the high-reflected power, adjust the
process parameters or re-tune the matching unit.
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 7 of 30 Issue 1: December 03