Utah-94-721002-System-Manual.pdf - 第166页
mä~ëã~ä~Ä = lñÑç êÇ=fåë íêìãÉåí ë=m ä~ë ã~=qÉÅÜåçäçÖó= System Manual Check that plasma is striking – try high pressure st rike (>50mT RIE, >8mT ICP), or increased RF power input, or addition of more DC bias Try sel…

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• Etch rate has dropped
• Selectivity reduced
• Profile no longer anisotropic
• Non-uniform etching (or deposition)
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• Hardware has changed – new gas cylinder, new cover plate, RF connection / grounding is faulty.
• Chamber leak – Check leak-up rate
• Faulty MFC – check partial pressures
• APC cannot control pressure – check MFCs / Pumps
• RF generator/matching – adjust matching unit set-up, check generator range switch, watch HF
matching time in mixed frequency pulsed process
• Incorrect gases used
• Temperature – poor clamping / cooling, e.g. particles on electrode/wafer, lift pin not fully down,
wafer piece not glued to carrier, incorrect set-up of Eurotherm, high power, or poor resist
preparation
• Chamber is dirty – needs more frequent cleaning
• Incorrect process regime (knife-edge process)
• Wrong hardware for given process - wrong cover plate, wafer not being cooled / heated
sufficiently, wrong electrode gap
• Wrong process for given hardware - no pumpdown time, no preheat step, no pre-clean step
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• Process not etching / depositing – does plasma ignite?
• Plasma does not ignite/light up
• Plasma is unstable/pulsing
• Plasma is flickering
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Check that readbacks are within tolerance – MFCs, pressure control, RF matching, temperature.
Check that base pressure has been reached (this can always be changed if you are in a hurry!)
Read error / warning / information messages
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 23 of 30 Issue 1: December 03

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Check that plasma is striking – try high pressure strike (>50mT RIE, >8mT ICP), or increased RF power
input, or addition of more DC bias
Try selecting ‘ignore tolerance’ checkbox
Sudden pressure rise – check for dissociation, - try Ar instead, strike at reduced ICP power
Sudden pressure rise at plasma strike – check for cross talk between RF power and CM gauge
Sudden temperature rise at plasma strike – check for cross talk between RF power and temperature gauge
Sudden gas flow change at plasma strike – check for RF cross talk
Process Information (Information contained in this document is confidential)
Issue 1: December 03 Page 24 of 30 Printed: 08 January 2006 09:37

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AMU Abbreviation for Automatch Unit. This is a self-controlling variable capacitor,
which is connected between an electrode (to which it is normally close-coupled)
and the discharge power supply. Its purpose is to shift the voltage and current
waveforms to maximise the power transfer. It also transforms the load
impedance to 50Ω.
APC Abbreviation for Automatic Pressure Controller. Refers to a variable
conductance valve, which, under the control of a closed loop feedback system,
controls the chamber pressure. The controller is a remote electronic module
with inputs from a chamber pressure gauge, and from the system master
controller.
Backing pump A pump in series with, and downstream of, the main high vacuum pump. (See
also Rotary pump)
Backing valve The valve which, when open, allows the backing pump to pump gas from the
main pump.
Baratron
See CM gauge. Baratron is a trade name.
Base pressure The lowest pressure attainable by a high vacuum pump. Alternatively, the
pressure, which should be attained before starting a process.
Bayard-Alpert gauge See Ion gauge
Clean gas This refers, in fact, to 'cleaning gas'. It is a gas which, when converted to a
plasma, removes contamination from the walls of the chamber and from the
electrodes.
Cluster An array of processing chambers around a single load lock chamber housing a
substrate-handling robot.
CM gauge (Baratron) Capacitance manometer gauge in which gas pressure deflects a membrane and
thus a measured capacitance. Measures absolute pressure down to
approximately 10
-5
Torr. Not affected by corrosive gases. Does not need a
correction factor for different types of gas.
Cryo pump (Meissner
coil)
These pumps trap gas on a very cold surface. They usually consist of a closed
circuit helium refrigeration system. They require periodic regeneration, during
which they cannot be used for pumping. Base pressure approximately 10
-9
Torr.
Driven electrode The electrode to which the electrical discharge power is applied. The other
electrode may be either earthed or at floating potential.
DSµW An abbreviation for the Downstream Microwave process.
ECR An abbreviation for the Electron Cyclotron Resonance process.
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 25 of 30 Issue 1: December 03