00195941-03-UM SiplaceCA-EN - 第122页
3 Technical Data User Manual SIPLACE CA 3.1 SIPLACE CA Performance Data Edition 08/2011 EN 122 3 Placement head types- – 20 segment Collect&Place CA head (C&P20CA) – 12 segment Collect&Pl ace CA head (C&P…

User Manual SIPLACE CA 3 Technical Data
Edition 08/2011 EN 3.1 SIPLACE CA Performance Data
121
3
Technical Data Flip Chip Die Attach
X/Y accuracy
a
a) Calculated with glass die on glass plate - SIPLACE MAC test
± 10 µm at 3 ± 10 µm at 3
Placement performance (IPC)
b
b) Calculated with the SIPLACE CP20-CA head
9,000 dies/h
(without flux dipping)
6.000 dies / h
6,000 dies/h
(with flux dipping)
Die sizes
c
c) Calculated with the SIPLACE CP20 and CP12 head. Alternative SIPLACE placement
heads available for greater component spectrum.
0.8 mm to 18.7 mm 0.8 mm to 18.7 mm
Minimum die thickness (silicium) 50 µm 50 µm
Minimum bump size 50 µm n/a
Minimum bump grid 100 µm n/a
SIPLACE Wafer System SWS Horizontal system, automatic wafer change,
MCM
SWS wafer size 4“ to 12“
Waferframe 12“/8“
Waferframe area 0 mm to 8 mm
Die Ejection System Programmable ejection speed
Linear Dipping Unit LDU Individually programmable speed
Flux viscosity 3,000 to 100,000 cPs
Accuracy of flux height ± 5 µm
Programmable set-down force 1.0 N to 5.0N (depends on head)
Substrate types FR4, ceramic, flex, boats, 8"/12" wafer etc.
Substrate thickness 0.3 mm to 4.5 mm
Substrate size 50 mm x 50 mm to 508 mm x 610 mm

3 Technical Data User Manual SIPLACE CA
3.1 SIPLACE CA Performance Data Edition 08/2011 EN
122
3
Placement head
types-
– 20 segment Collect&Place CA head (C&P20CA)
– 12 segment Collect&Place CA head (C&P12A)
– 6 segment Collect&Place CA head (C&P6)
– SIPLACE TwinHead (TH)
(only possible in a placement area without SWS).
Number of gan-
tries
CA4: 4 gantries
CA3: 3 gantries
Place-
ment-positions
6,000 / gantry for the Collect&Place heads
2,000 / gantry for the TwinHead
Component
spectrum
a
0,4 mm x 0,2 mm (01005), 0,6 mm x 0,3 mm (0201)
bis 85 mm x 85 mm / 125 mm x 10 mm,
max. 200 mm x 125 mm (with restrictions)
Component
height
C&P20CA: 4 mm
C&P12: 6 mm
C&P6: 8.5 mm
TH: 25 mm
b
(higher heights on request)
Placement
accuracy
(Standard--cri-
teria for SMD)
C&P20CA
C&P12
C&P6
TH
TH
± 41 µm (3), ± 55 µm (4)
± 41 µm (3), ± 55 µm (4)
± 45 µm (3 ), ± 60 µm (4 )
± 26 µm (3), ± 35 µm (4)
± 22 µm (3), ± 30 µm (4)
Component camera, type 41
(6 x 6)
Component camera, type 29
(27 x 27)
Component camera, type 29
(27 x 27)
Component camera, type 33
(55 x 45)
Component camera, type 25
(16 x 16)
Placement
accuracy
(Advanced cri-
teria for SWS)
C&P20CA
C&P12
C&P6
TH
TH
± 25 µm (3), ± 33 µm (4)
± 25 µm (3), ± 33 µm (4)
± 35 µm (3), ± 47 µm (4)
± 26 µm (3), ± 35 µm (4)
± 22 µm (3), ± 30 µm (4)
Component camera, type 41
(6 x 6)
Component camera, type 29
(27 x 27)
Component camera, type 29
(27 x 27)
Component camera, type 33
(55 x 45)
Component camera, type 25
(16 x 16)

User Manual SIPLACE CA 3 Technical Data
Edition 08/2011 EN 3.1 SIPLACE CA Performance Data
123
Angular accu-
racy-
C&P20CA
C&P12
C&P6
TH
TH
± 0.5° (3), ± 0.7° (4)
± 0.5° (3), ± 0.7° (4)
± 0.2° (3), ± 0.3° (4)
± 0.05° (3), ± 0.07° (4)
± 0.05° (3), ± 0.07° (4)
Component camera, type 41
(6 x 6)
Component camera, type 29
(27 x 27)
Component camera, type 29
(27 x 27)
Component camera, type 33
(55 x 45)
Component camera, type 25
(16 x 16)
a) The range of components depends on the selected head configuration.
b) The specified component height for TwinHead might be reduced in placement areas with two gantries and a com-
bination of Collect&Place head and TwinHead.