IPC-TM-650 EN 2022 试验方法-- - 第372页

Example: Note: Figure 2 Wheatstone Bri dge In strumentation Hookup R Gage on Unknown R Gage on Standard R Standard Resistors on Instrument M Direct Reading Strain Meter External or Measurement Half Bridge Internal or Ins…

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Figure 1 Test Fixture Configuration
Sample
Strap 2PL
Base Plate
IPC-TM-650
Page 3 of 4
Number
2.4.41.2
Revision
A
Subject
Coefficient
of
Thermal
Expansion
Strain
Gage
Method
Date
05/04
5.3.5
Place
the
gage/terminal
assemblies
in
their
original
position
over
the
reference
lines,
using
only
enough
pressure
to
allow
the
assemblies
to
be
tacked
down.
Overlay
the
gage/
terminal
area
with
thin
pieces
of
PTFE
tape,
and
anchor
them
in
position
with
pieces
of
Mylar
tape
across
the
ends.
5.3.6
Cut
the
silicone
gum
pads
to
size
slightly
larger
than
the
gage/terminal
areas,
carefully
centering
them
in
position.
Larger
pads
may
restrict
proper
spreading
of
the
adhesive
and
entrap
residual
solvents
during
the
curing
process.
5.3.7
Use
spring
clamps
or
dead
weights
to
apply
pressure
(275
to
350
kN/m2
[40
to
50
psi])
and
place
in
the
curing
oven
which
is
to
be
at
room
temperature.
5.3.8
Raise
the
temperature
to
100
±
3
[212
°F
6
°F]
(use
79
[174
°F]
if
using
M-Bond
600)
at
a
rate
of
3
to
11
/min
[5
°F
to
20
°F/min],
and
cure
for
4
1/2
to
5
hours.
Air
bubble
entrapped
in
the
adhesive,
uneven
glue
lines,
and
high
adhesive
stresses
often
result
from
starting
with
a
hot
oven.
5.3.9
Remove
the
specimens
after
allowing
the
oven
to
cool
below
55
[131
°F],
remove
clamps
and
Mylar
tape,
and
clean
the
entire
surface
with
isopropyl
alcohol
to
remove
residual
tape
adhesive.
Wipe
dry
with
a
gauze
sponge.
5.3.10
Post
cure
for
2
to
2
1/2
hours
at
40
[104
°F]
(30
[86
°F]
per
M-Bond
instructions)
above
the
test
upper
limit
temperature.
Care
must
be
taken,
if
base
materials
hav¬
ing
low
Tg
values
(FR-4)
are
to
be
tested.
5.3.1
1
Bond
the
solder
tabs
6.4
mm
[0.25
in]
from
the
strain
gages.
The
gage
leads
are
to
looped
slightly
prior
to
soldering
to
prevent
inducement
of
strain
resistance
changes.
Solder
tabs
may
be
attached
in
the
same
step
as
the
strain
gages.
5.4
Specimen
Fixture
Preparation
(If
required,
Figure
1)
5.4.1
The
PCB
and
titanium
silicate
standards,
once
assembled
with
the
strain
gages,
are
fixtured
to
prevent
bend¬
ing
or
warping
by
the
straps
labeled
PL
in
Figure
1
during
the
temperature
cycle
test.
The
fixture
used
for
the
specimens
will
not
interfere
with
the
thermal
expansion
of
the
specimens
being
tested.
The
fixture
is
constructed
of
1
.25
mm
[0.050
in]
thick
Alloy
42
plated
with
0.025
mm
[0.001
in]
of
copper.
This
material
was
chosen
because
of
its
thermal
expansion
properties
that
are
close
to
that
of
the
test
specimens.
Plated
Alloy
42
straps
are
used
to
gently
hold
the
specimen
flat
to
the
fixture.
Other
materials
that
may
closely
match
the
GTE
of
the
test
speci¬
men
may
be
used.
5.5
Test
Configuration
Connect
two
strain
gages,
one
to
the
test
specimen
and
one
to
the
to
the
titanium
silicate
stan¬
dard,
in
adjacent
arms
forming
a
half
bridge;
the
remaining
half
of
the
Wheatstone
bridge
being
completed
with
the
Wheatstone
bridge
instrument
(see
Figure
2).
Repeat
for
the
remaining
two
strain
gages,
one
on
the
test
specimen
and
one
on
the
titanium
silicate
standard
with
a
second
Wheat¬
stone
bridge
instrument
in
the
circuit.
Attach
(tape)
thermocouple
to
the
sample
within
a
6.0
mm
[0.25
in]
of
the
measurement
area.
5.6
Specimen
Conditioning/Thermal
Cycling
Clean
the
specimens
by
immersing
in
M-Line
solvent
with
agitation
for
15-20
seconds.
Allow
to
dry
for
1
to
1
1/2
hours
at
40
±
5
[105
°F
±
9
°F]-
5.6.1
Place
the
specimens
and
the
reference
standards
in
the
thermal
cycling
chamber
(with
programmable
temperature
control)
set
at
20
[68
°F]
and
allow
to
stabilize
for
30
to
40
minutes
or
as
required
to
relieve
strain
gage
attachment
stresses.
5.6.2
Increase
temperature
at
a
rate
of
2
/min
[3
°F/min]
up
to
130
[266
°F]
or
other
test
temperature
designated,
allowing
the
specimens
to
stabilize
for
1
0
minutes
or
longer,
if
Example:
Note:
Figure 2 Wheatstone Bridge Instrumentation Hookup
R Gage on Unknown
R Gage on Standard
R Standard Resistors on Instrument
M Direct Reading Strain Meter
External or Measurement
Half Bridge
Internal or Instrument
Half Bridge
U
S
K
R
U
R
S
R
K
R
K
M
IPC-TM-650
Page 4 of 4
Number
2.4.41.2
Revision
A
Subject
Coefficient
of
Thermal
Expansion
Strain
Gage
Method
Date
05/04
required.
Decrease
the
temperature
to
-55
±
2
[-67
°F
±
3
°F]
or
other
temperature
designated
and
allow
to
stabilize
for
10
minutes
or
until
no
further
changes
are
noted
on
the
meter.
Increase
the
temperatures
to
25
[77
°F]
at
the
same
rate
and
allow
the
specimens
to
stabilize.
5.6.3
Throughout
the
thermal
cycle,
the
temperature
and
change
in
resistance
as
noted
on
the
meter(strain)
should
be
recorded
at
the
desired
time
and
temperature
(two
minute
intervals).
5.7
Calculation
of
CTE
Plot
the
gage
resistance
versus
the
temperature.
Measure
the
slope
of
the
line
between
the
temperatures
of
interest
and
record.
The
equation
for
calculating
the
Coefficient
of
Thermal
Expan¬
sion,
8,
are:
8
AR/R(GF)AT
Where
8
the
coefficient
of
thermal
expansion
R
=
gage
resistance
reading
AR
the
change
in
resistance
reading
AT
the
change
in
temperature
GF
=
the
Gage
Factor
of
a
particular
gage
and
gage
con¬
figuration
and
is
furnished
by
the
strain
gagemanufacturer.
The
GF
for
the
WK
gage
is
near
2.1
Resistance
reading
at
20
[68
°F]
=
352.39
Resistance
reading
at
1
70
[338
°F]
=
353.40
GF
as
furnished
by
manufacturer
=
2.11
(353.40-352.39)
(353.40
X
2.11
X
150)
9.03
ppm/℃
The
graph
plot
of
AR/AT
will
allow
selection
of
any
tem¬
perature
point.
All
strain
and
temperature
data
should
be
recorded
on
a
disk.
Software
packages
are
available
that
the
raw
data
(resistance
changes
and
temperature)
to
strain
and
temperature.
The
software
compensates
for
gage
factor
with
temperature,
apparent
strain
of
the
gage,
and
the
bridge
configuration
in
reducing
the
data.
The
software
also
uses
the
data
from
the
titanium
silicate
standard
to
adjust
the
reduced
data
of
the
test
specimen.
6
Notes
6.1
Suggested
Sources
of
Materials
6.1.1
Source
of
Adhesive
System
M
icro-
Measurements
Division
Measurements
Group
Inc.
P.
O.
Box
27777
Raleigh,
NG
27611
Phone:
(919)
365-3800
6.1.2
Information
Bulletin
Micro-Measurements
Division
Measurement
Group
Inc.
P.O.
Box
27777
Raleigh,
NO
27611
Phone
(919)
365-3800
Bulletin
#
B1
30-10
6.1.3
Titanium
Silicate
Standard
Corning
Glass
works
Corning,
NY
14831
Micro-
Measurements
Division
Measurement
Group
Inc.
P.O.
Box
27777
Raleigh,
NG
27611
Phone
(919)
365-3800
ASTM D 3386
Figure 1
T
emperature (
C)
A
0
B
200
Extension
The Institute for Interconnecting and Packaging Electronic Circuits
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Material in this Test Methods Manual was voluntarily established by Technical Committees of the IPC. This material is advisory only
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Page 1 of 2
IPC-TM-650
TEST
METHODS
MANUAL
1
.0
Scope
This
test
method
establishes
a
procedure
for
determining
the
in-plane
coefficient
of
linear
thermal
expan¬
sion
of
organic
films
from
0-200℃
using
thermal
mechanical
analysis
(TMA).
2
.0
Applicable
Documents
ASTM
D
618
Standard
Practice
for
Conditioning
Plastics
and
Electrical
Insulating
Materials
for
Testing
Standard
Test
Method
for
Coefficient
of
Lin¬
ear
Thermal
Expansion
of
Electrical
Insulating
Materials
3
.0
Test
Specimen
The
test
specimen
shall
consist
of
a
strip
15-20
mm
long
and
2
mm
wide
with
a
minimum
thick¬
ness
of
1
0
pm
and
maximum
thickness
of
200
pm.
4
.0
Apparatus
or
Material
Perkin-Elmer
TMA-7
with
a
film
fixture
in
extension
mode
or
equivalent
equipment
capable
of
handling
films
less
than
25
pm
thick.
5
.0
Procedure
5.1
The
test
specimens
should
be
conditioned
at
23
2
and
50
±
5%
relative
humidity
for
not
less
than
24
hours
prior
to
testing.
Refer
to
ASTM
D
618.
5.2
Follow
the
manufacturer's
recommendations
for
equip¬
ment
startup
and
calibration.
5.2
Mount
the
test
specimen
in
the
film
holder.
The
sample
length
(between
the
grips)
should
be
between
11-13
mm.
Refer
to
ASTM
D
3386.
5.3
Set
the
force
at
30
mN.
5.4
Perform
a
prescan
by
heating
a
rate
of
20℃/min.
Under
inert
atmosphere
from
-10℃
to
either
10℃
above
the
mate¬
rial
glass
transition
temperature,
Tg,
or
10℃
below
the
mate¬
rial
decomposition
limit,
Tmax,
determined
using
nitrogen.
Tg
may
be
determined
using
IPC
Test
Methods
2.4.24.2,
2.4.24.3,
or
2.4.25.
5.5
Hold
the
temperature
for
60
min.
Number
2.4.41.3
Subject
In-Plane
Coefficient
of
Thermal
Expansion,
Organic
Films
Date
Revision
7/95
Originating
Task
Group
Deposited
Dielectric
Task
Group
(C-13a)
5.7
Hold
the
temperature
for
10
min.
5.8
Reheat
the
specimen
at
a
rate
of
5
℃/min
to
a
maximum
temperature
of
25℃
below
the
glass
transition
temperature
of
the
polymer
or
10℃
below
the
material
decomposition
limit,
Tmax,
determined
under
nitrogen.
Ar
least
two
temperature
scans
of
the
test
specimen
should
be
conducted
without
dis¬
turbing
the
specimen
in
the
TMA
to
confirm
repeatability
of
observed
test
results.
5.9
Calculate
the
average
coefficient
of
thermal
expansion,
over
the
temperature
intervals
of
interest
as
follows:
a
(AUAT)/L
where
L
is
the
length
of
the
test
specimen
between
the
grips,
AL
is
the
change
in
the
length
of
the
specimen
(in
the
same
units)
over
the
temperature
interval
AT,
and
AT
is
the
tempera¬
ture
interval
(normally
200℃)
as
illustrated
in
Figure
1.
The
units
are℃-1
.
5.10
The
coefficient
of
linear
thermal
expansion
from
0
200℃
(below
the
glass
transition)
is
(Length
B
-
Length
A)
-
(Length
A)
(Temperature
B
-
Temperature
A)
5.6
Cool
at
a
rate
of
5
℃/min
to
-10℃.