Operation-Spec-Oxford-System-100-Rev-C.pdf - 第5页

Oxford Instruments Plasmalab 100 ICP-RIE Page 5 of 8 Appendix A : Reci pe Parameter Inf ormation • Step time [hh:mm :ss]: Amount of t ime the step shou ld run. • Ignore tolerance : Certain p arameters have ce rtain toler…

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Oxford Instruments Plasmalab 100 ICP-RIE
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V. SIGNATURES AND REVISION HISTORY
a. Author of this document: Elijah Colter
b. Author Title or Role: Student Technician
c. Date: 10 January 2022
d. Revision: C
e. Revision notes: Re-formatted and clarified operation instructions
Approvals:
Technical Manager Signature: ___Sandra G Malhotra_____________________________
Date: ____1/10/2022_______________________________________
Revision History:
Revision
Author
Date
Original Issue
L. Rehn
03 April 2014
Rev A
E. Morse
21 October 2019
Rev B
E. Morse
15 January 2020
Rev C
Elijah Colter
10 January 2022
Rev D
Rev E
Oxford Instruments Plasmalab 100 ICP-RIE
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Appendix A: Recipe Parameter Information
• Step time [hh:mm:ss]: Amount of time the step should run.
• Ignore tolerance: Certain parameters have certain tolerances. For example, if the table
temperature setpoint is 20 °C and the actual value is 30 °C, then it is out of tolerance. By
checking this box, the recipe will continue to run if the tolerances are not satisfied.
• Hold: When “Hold” is on, the plasma is continuous between steps. If NOT selected, the plasma
will turn off between steps while the APC stabilizes.
• Automatic Pressure Controller (APC): The APC controls the chamber pressure automatically
based on the gas flow rates and pressure setpoint.
o Chamber Pressure [mTorr]: Pressure in the process chamber.
o Strike Pressure [mTorr]: Value at which the RF should turn on and strike the plasma. If a
zero is entered, the feature is disabled, and the RF will turn on once the pressure has
stabilized at the requested process pressure
o DC Bias Minimum [V]: Enter a positive number for the minimum DC bias value
expected once the plasma has struck. Enter zero if DC bias cannot be read because the
substrate (and any wafer clamp) completely covers the electrode, or if the electrode has
an insulating coating. A non-zero value is used by the software to detect if the plasma has
been properly established. If a zero is entered, then the software assumes the plasma has
struck once the RF reflected power goes low.
o Ramp Rate [s]: Sets the rate at which the pressure is reduced from the strike value to the
set point. The higher the number entered, the faster the transition to process conditions
will be. Too high a value can cause the plasma to go out.
• RF Generator:
o Forward Power [W]: Value of the RF power applied to the plasma.
▪ MAXIMUM = 200 W
▪ Increasing RF power increases etch rate, increases anisotropy/directionality, and
decreases selectivity
▪ DC Bias [V] and Reflected Power [W] are functions of the forward power and
other parameters. If DC Bias is larger than 500 V, an error will occur, and the
tool will abort the process.
• ICP (Inductively Coupled Plasma):
o Forward Power [W]: Value of ICP power applied to the plasma.
▪ MAXIMUM = 2000 W
▪ Increasing RF power increases etch rate, decreases anisotropy/directionality, and
increases selectivity.
• Helium Backing: Used to cool wafers.
o Pressure controller [Torr]: Pressure of helium on the wafer’s backside.
o Sccm [SCCM]: Helium flow rate.
• Cryo [°C]: Temperature of the process chamber.
o MAXIMUM RANGE = -100 °C to 30 °C
• Gases [SCCM]: Flow rates of the provided gases (SF6, O2, Ar, CHF3). Larger etch gas flow rates
(SF6, CHF3) increase etch rate.
o MAXIMUM = 100 SCCM
Oxford Instruments Plasmalab 100 ICP-RIE
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Appendix B: Common Substrate Chemistry Recipes
Table 1. Etchant-etch gas combinations
Material Being Etched
Si
SiO
2
Si
3
N
4
, SiN
x
SiC
Poly-Si
Graphene (C)
W
TiW
GaN
Photoresist