prober-english - 第13页
6 inch 8 inch Model HSP-V150 / HSP-V200 On ‐ wafer Characteristics Evaluation of MEMS Devices at High / Low Temperatures in an Ultra High Vac uum Environment ■ VACUUM PROBE SYSTEM ・ Model HS…

25mm sq.
Model HMP-V80 series
CompactVacuumProberforR&D(atUltraLowtoUltraHighTemperatures)
ThisisacompactvacuumproberforR&DthatsupportsI‐V/C‐V/RFmeasurementson5‐mmto25‐mmsamples.
Thereareavarietyofmodelsavailablesuchasonethatsupportstemperaturetestsatultralowtemperaturesonthe
4klevelandonethatsupports
thetemperaturetestsatupto+500°C.
Substrate Size
General
Ultimatevacuum*
Numberofmeasurementchannels
Measurementfeed‐throughconnector*
Probe X‐Y‐Ztravel
Magnification*
Illuminatingapparatusformicroscopes*
ProbeAdjustmentsensitivity
5mm~ 20mm square
1x10E‐4Pa
40x~ 240x(onmonitor)
LEDring lighti ng
2~ 7(6‐ probemaximum,1‐ chuck)
Hermetically triaxial(Jack)standard
X30mm,Y50mm, Z15mm
<0.01mm
Microscopemovement*
Microscopetype
3jointhorizontalswingarm
CCDmono‐scopewithLCDmonitor
*Itemswithasteriskvarydependingonsystemconfiguration.
Movements
Microscope
Roomtemperatureorultralowtemperaturemodel
Model Temperaturerange Heatingmethod Coolingmethod
HMP‐V80 Ambient None None
HMP‐V80‐LH
4.2kto298k(+25°C)
Heater Liquidheliumtransfer
HMP‐V80‐LHM
8klevelto473k(+2 00°C)
Heater Liquidheliumtransfer
HMP‐V80‐LHH
10klevelto573k(+300°C)
Heater Liquidheliumtransfer
HMP‐V80‐LN
80kto298k(+25°C)
Heater Liquidnitrogencryostat
HMP‐V80‐LNM
80kto473k(+200°C)
Heater Liquidnitrogencryostat
HMP‐V80‐LNH
80kto573k(+300°C)
Heater Liquidnitrogencryostat
HMP‐V80‐PS
80kto298k(+25°C)
Heater FreePistonStirlingcooler
Ultrahightemperaturemodel
Model Temperaturerange Heatingmethod Coolingmethod
HMP‐V80
R.T.to+300°C
Heater Compressedair
HMP‐V80‐LH
R.T.to+400°C
Heater Compressedair
HMP‐V80‐LHM
R.T.to+500°C
Heater Compressedair
Common specification
■ VACUUM PROBE SYSTEM
Vacuumprobesystem
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6inch
8inch
Model HSP-V150 / HSP-V200
On‐waferCharacteristicsEvaluationofMEMSDevicesatHigh / LowTemperatures
inanUltraHighVacuumEnvironment
■ VACUUM PROBE SYSTEM
・
Model HSP-V150 is for 6" wafers.
・
Model HSP-V200 is for 8" wafers.
Thisprobersupportson‐wafermeasurementsathigh/lowtemperatures(‐60°Cto+300°C)onMEMSdevicesthatmust
operateinavacuumenvironmentsuchasRFMEMSdevicesorcrystaloscillatorMEMSdevices.
Thecostofpackagingwhichisaveryexpensiveprocesscanbereducedby
implementingthissystem.
MEMSdevicecharacteristicssuchastheequivalenceconstant,transmissioncharacteristicssimulation,orSparameter
canbeautomaticallyacquiredonthewaferbycombiningtheproberwiththeimpedanceanalyzer,RFnetworkanalyzeror
othertester.
WaferSize
X‐Ytravel
X‐Yrepeatability
X‐Yaccuracy
Ztravel
Unitdimension(W×D×H)*
Weight*
Zrepeatability*
HSP‐V150 HSP‐V200
~φ150mm ~φ200 mm
X:160mm,Y:160mm X:310mm,Y:310mm
2500×1800×1900mm
2700×2000×1900mm
1300kg 1600kg
<±2μm
<±5μm
20mm
<±1μm
θ travel
θ repeatability
±7.5°
0.002°
*Itemswithasteriskvarydependingonsystemconfiguration.
Ultimatevacuum 1x10E‐3Pa(1x 10E‐5Paoptional)
Atthestageofresearchanddevelopment
oforganicsemiconductordevicesuchas
OFET,OTFT,OEL,andOLED,itis
necessarytoperformevaluationunder
high‐purityinertgastoavoidcharacteristic
degradationcausedbymoistureoroxygen
intheatmosphere.
Oncethissystemisimplemented,organic
semiconductordevicescanbe
measuredat
ahighorlowtemperature(‐60°Cto+300°C)
inthehighly‐pureinertgas(N2orAr)
environmentachievedbyvacuumingand
gasdisplacement.
Thissystemsupportsultralowsignal
measurementsandmeetsdemandforhigh‐
accuracyI‐V/C‐Vmeasurementsinvarious
organic
semiconductordevices.
MEMS
Organicsemiconductor
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Vacuumprobesystem

Magnetic Stimulation Probe System
■ SPECIALTY PROBE SYSTEM
Semi‐automaticVerticalmagneticfieldprober
(± 1500Oe ,‐60゜Cto+200゜C)
Weofferdesignandmanufacturingofprobesystemstoapplymagneticfieldsforevaluatingalltypesof spintronics devices
(MRsensor,MRAM,Fram,FeRam)andHalldevices.
‐ Highlyadvancednonmagneticstructure
‐ Excellentmagneticfieldhysteresischaracteristics
‐ Supportssuperlowresidualfieldelectromagnets.
‐ Supportsin‐planemagneticfieldsandverticalmagneticfields.
‐ Provision
ofmagnetic fieldapplicationandmeasurementapplicationsoftware
‐ Provisionoftraceablemagneticfieldcalibrationtoolandcorrecti onsoftware
‐ Temperaturecharacteristicevaluationinrangefrom‐65°Cto+200°C
‐ Lowresistancemeasurements,RFmeasurements(upto67GHz)
‐ SupportsmanualproberandSemi‐automaticprober
Elemental technologies
PatenttechnologyofToeiScientificIndustrialCo.,Ltd.isusedforourprobesystemmountedwithverticalmagneticfieldelectromagnets
(JapanPatentApplicationLaid‐OpenDisclosureNumber2010‐212453)
ManualIn‐plane magneticfieldprober
(‐3000Oe to+3000Oe)
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Specialty Probesystem