prober-english - 第16页
■ APPLICATIO NS Ultra Low Signal I ‐ V / C ‐ V Measurement High ‐ frequency / RF measurement The following plot is a res ult of measuring the cu rrent valu e while impressing t…

Probe systems for Optoelectronics
Weofferdesignandmanufacturingofsystemsthatmeasureopticalandelectricalcharacteristicsofthevariousoptoelectronics
(light‐emittingandlight‐receiving ) devicesonwafers.
Semi‐AutomaticProbeSystemwithBuilt‐in
MicroscopicPhotometricTube ForVCSEL,PD
/APDevaluation(fordiameterof2inches)
ManualOpticalFiberDirectConnectionTypeProber
ForVCSELevaluation(fordiameterof3inches)
Applications
‐ OpticalandelectricalcharacteristicsevaluationofVCSEL,LED orotherlight‐emittingdevices onwaferlevel
‐ Opticalandelectricalcharacteristicsevaluationofphotodiode, avalanchephotodiodeorotherlight‐receiving
devicesonwaferlevel
■ SPECIALTY PROBE SYSTEM
‐ I‐L‐V
‐ C ‐V
‐ PulsedI‐V
‐ Wavelength
‐ NFP
‐ FFP
‐ Modulationfrequency
‐ RIN
‐ Darkcurren t
‐ I‐V
‐ C ‐V
‐ Conversionefficiency
‐Wavelength‐conversionefficiency
‐ Cut‐offfrequency
‐ Modulationfrequency
‐ Transientresponse
VCSEL・LD・LEDcharacteristic
PD・APDcharacteristic
Manual 4 point resistivity prober
ThismanualmeasuringsystemistomeasureSiwafers,solarcell,sheetresistancesuchasLCD,andresistivitybyusing
four‐point probemethod.Weprovidemanualfour‐pointproberandKeithley’ssourcemetermodel2401asastandard
measuringsystem. ByusingaccessorymeasuringsoftwareforKeithley2401,automaticcalculationofsheet
resistance
andresistivitybecomepossible.
4‐pointprobe
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Specialty Probesystem
Variouslightsource SingleMonochromator
Integratingsphere
PMT

■ APPLICATIONS
UltraLowSignalI‐V/C‐VMeasurement
High‐frequency/RFmeasurement
Thefollowingplotisaresultofmeasuringthecurrentvaluewhileimpressingthesweepvoltagetotheprobeandthechuckthat are
intheopenstate.Theresultshowsthenoiseandleakcurrentoftheprobeislessthan±10fA.With300mm‐thermalchuck,it
showsthe
noiseandleakcurrentislessthan±20fAinallthetemperatureranges :‐60゜Cto+300゜C.Itprovesthatourprobe
systemcorrespondstoultralowsignalmeasurementapplicationthatrequiresmeasurementprecisionof1pAorless.
Theplotontherightismeasureddataofreversevoltageand
capacitancemeasurementofdiodedevice.
BycorrectingOPEN/SHORT/LOAD, itenablestodostable
C‐Vmeasurementof“fF” level.
C300‐60ULHigh/Lowtemperaturechuck
(‐60゜C~+300゜C)
Voltagesweeprange:‐10V~ +10V
ModelA74CJ1tip‐KelvinCoaxialProbe
Voltagesweeprange: ‐200V~ +200V
Note)Theabovemeasurementvalueisactualmeasurementvalueinourmeasurementenvironmentandnotguaranteedvalue
<±3fA
OurprobestationcancovermeasuringfrequencybandofDCto67GHz duetoitshighrigidityandstablemechanism.
SystemintegrationwithVector networkanalyzer(VNA),RF probe,RF cable,calibrationsubstrateetc.,willsupporthighfrequency /
RFmeasurementwhichishighresolutionandexcelsinrepeatability.
Itsupportsfrom2‐porttomulti‐port
measurement,temperaturerangefrom10kto+250゜C,andcharacterizationunderultra‐high
vacuum(10e‐6Pa)environment.
UltralowcurrentI‐Vmeasurement
UltralowcapacitanceC‐Vmeasurement
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Applications
‐65゜C~+200゜C:<±10fA
+300゜C:<±20fA

■ APPLICATIONS
Wafer‐LevelReliabilityTest
NoiseCharacterization
OrganicSemiconductorDeviceEvaluation
Atthestageofresearchanddevelopment oforganicsemiconductordevicesuchasOFET,OTFT,OEL,andOLED,itisnecessary
toperformevaluationunderhigh‐purityinertgastoavoidcharacteristicdegradationcausedbymoistureoroxygeninthe
atmosphere.Weoffersmall‐footprintmanualproberandsemi‐autoproberthat
arespeciallydesignedfortheusageinsideofa
glovebox.Theyaresuitableforoperationbyglovedhand.
Manualproberforglovebox
Semi‐automatic proberforglovebox
+300゜CHightemperaturemulti‐siteprobecard
Anoxygenmeterinsideofachamberandamass flow
controller (MFC)enable probingwithalowresidual
oxygenconcentrationoflessthan100ppm
Weofferprobesystemsthatsupportwafer‐levelreliabilitytestsuchasEM,TDDB,HCI,NBTI,BT,etc.,.
Ourprobesystemsupport
varioustasksrequiredinwafer‐levelreliabilitytestsuchashightemperatureupto+300゜C,long‐term
testingoverweeks,stablecontactunderhightemperatureenvironment,mountingmulti‐siteprobecard,anti‐oxidation
environmentbynitrogengaspurge,etc.,.
Ourprobesystemwithshieldchamber (HMP‐810SC/1210SC,HSP‐200SC/300SC)hasoptionsettingofultralowfloornoise(‐UL).
Bychoosingthis“–UL” option,itcansupporton‐wafernoisecharacterizationsuchas1/fnoise,randomtelegraph noise,(RTN),and
RFnoiseinthewidetemperaturerangefrom‐65゜Cto+200゜C.
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Applications