Fast_Firing_System_EN.pdf - 第5页

5 VOC Thermal Oxidiz er for a clean process Drying solar pastes produces up to 30 % of the weight of the printed paste in volatile or ganic compounds (VOC). The VOC’ s have to be removed fr om the process chamber via exh…

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RDS Dryer
Ready for complex pastes
Drying the large variety of ever evolving solar pastes is
ever more challenging in the silicon solar cell production.
Complex pastes for PERC to HJT cell architectures require
a modular drying system which provides a large process
window for the customer.
While maintaining a short footprint, the RDS can process
5300 wafers/hour at speeds of up to 10 m/min. The system
will easily meet any cycle time requirements called for in
this fast-paced market. It is the chosen dryer of one of the
industry’s top print line manufacturer.
Dual heating concept for best proling
Temperature prole flexibility
Rehm dryers are designed to handle a variety of drying
proles from fast ramp up to temperatures of over 300 °C to
a slow increase in temperature for a very stable heat intake
of the cells. The innovative hybrid heat transfer combines
separately controllable IR and convective heating technolo-
gy. This technology provides the customer with a maximum
degree of flexibility when setting up a prole.
› High prole exibility
› Fast temperature ramp-up
› High throughput
› High energy eciency
› Modular design for integration in HJT lines
› Lane pitch capability of 210 mm – 280 mm
Flexible proling due to seperately controlled IR
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VOC Thermal Oxidizer
for a clean process
Drying solar pastes produces up to 30 % of the weight of the printed paste in volatile organic compounds
(VOC). The VOC’s have to be removed from the process chamber via exhaust to avoid contamination of the
process chamber, VOC’s condensation damage on the solar cell and obstruction due to odor development
in the vicinity of the dryer.
The Rehm Thermal Oxidizer will expose the exhaust volume to over 750 °C in order to destroy all VOC’s,
such as alcohols, toluene and terpineol with an efciency of up to 99,9 %. The side products of this process
are water vapor and carbon dioxide and make this a sustainable environmentally friendly process in com-
pliance with legal standards such as the TA Luft, Germany. Even with the higher throughput in modern cell
production, the RehmT hermal Oxidizer can handle the increased VOC content.
Data and facts
VOC destruction results
Run No. 1 Run No. 2 Run No. 3
Oxidizer Inlet VOC
Concentration (g/m³)
1,64 1,71 2,07
Oxidizer Outlet VOC
Concentration (g/m³)
0,00273 0,00145 0,00305
VOC Destruction Rate (%) 99,8 99,9 99,8
VOC Thermal Oxidizer/COMPACT
Max. VOC destruction efciency 99,9 %
Operating temperature 750 °C
Volumetric flow raw gas 110 Nm³ / h
Residence time 1s
Dimensions H: 1400 mm
W: 1200 mm
L: 1200 mm
measured during production at leading solar cell manufacturers
Oxidizer Integrated
REHM SOLAR DRYER
OTHER SOLAR DRYERS
Oxidizer Retrot
Oxidizer Retrot
Oxidizer Stand-alone
Oxidizer Stand-alone
Rehm Thermal Oxidizer comes
integrated into the Aluminum
Back side Dryer or can be retrot-
ted as a top-mounted or stand-
alone unit to a number of drying
systems in the market.
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Speedre Firing Furnace
Processing up to 5300 wafers/hour
Rehm Speedre Firing Furnace offers a range of advanced pro-
cess features and thermal control that enable PV manufactur-
ers to move their processes to entirely new levels of efciency
and yield. The demand for high process flexibility, higher wafer
throughput and decreasing cycle times has led to the latest
innovation in the eld of ring systems.
The modularity of the Speedre zones allows the user to
achieve full polymer binder burn off and fast ring at tem-
peratures up to 900 °C while processing 5300 wafers/hour.
Even at belt speeds of up to 10 m/min the Rehm Fast Firing
Furnace offers a large process window in the peak zones,
allowing for the most customized temperature proles.
2015 2017 2018
Seconds
2
1,5
1
2005 2010 2015
0
Wafer / hour
1000
5000
6000
Wafer/hDual LaneSingle Lane
Single lane vs. Dual lane [%]
0
20
40
60
80
100
120
2000
3000
4000
Development of wafer production/dual lane conguration Increased wafer throughput