m220_383_02_process_manual工艺手册.pdf.pdf - 第29页
PROCESS SETUP AND ACCEPTANCE P ROCESS M ANU AL 3.4-4 3.4.2 Default process test conditions 3.4.2.1 Test material requirements Bare Si wafers are pri me wafers, single or do uble side mirror pol ished and according to SEM…
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-3
- Thickness and refractive index measurements should be done with a Plasmos automated
ellipsometer or comparable equipment.
- Sheet resistivity should be measured with an automated 4-point probe or comparable machine.
- Dopant concentration measurement should be supplied by the customer. Dopant variation will
be characterised in absolute percentages and measured with SIMS or a comparable technique.
- Particle measurements should be done with a Tencor Surfscan 6420 or comparable equipment.
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-4
3.4.2 Default process test conditions
3.4.2.1 Test material requirements
Bare Si wafers are prime wafers, single or double side mirror polished and according to SEMI
standard M1-0298.
Standard film thickness, sheet resistivity and/or dopant concentration as indicated in this section
apply unless otherwise stated in the customer specific process specifications.
3.4.2.2 Tempress Systems, Inc. Atmospheric processes
Atm-01 Anneal
Test: temperature overshoot and stability
Atm-02 Metalalloy anneal
Test: temperature overshoot and stability
Atm-03 Dry oxidation
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04 Dry oxidation + liquid cleaning
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04s Thin gate oxidation +Atmoscan®
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-05 Pyrogenic oxidation
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-5
base: bare Si wafer
testmethod: ellipsometer
Atm-06 Pyrogenic oxidation + liquid cleaning
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-07 reserved
Atm-08 POCl
3
diffusion
Test sheet resistivity: 8 or 30 ohm/square
test temperature: 900
o
C deposition - 1000 drive-in
o
C
time indication: 30 min – 30 min
base: bare Si wafer
testmethod: four-point probe
Atm-09 reserved
Atm-10 reserved
Atm-11 reserved
Atm-12 Wet oxidation H
2
O bubbler
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-13 Wet oxidation H
2
O injection
Equipment: Tempress Systems, Inc. water injection
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer