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PROCESS SETUP AND ACCEPTANCE P ROCESS M ANU AL 3.4-5 base: bare Si wafer testmethod: ellipsometer Atm-06 Pyrogenic oxidation + liquid cleaning Equipment: Tempress System s, Inc. external torch test thickness: 2000Å test …

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PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-4
3.4.2 Default process test conditions
3.4.2.1 Test material requirements
Bare Si wafers are prime wafers, single or double side mirror polished and according to SEMI
standard M1-0298.
Standard film thickness, sheet resistivity and/or dopant concentration as indicated in this section
apply unless otherwise stated in the customer specific process specifications.
3.4.2.2 Tempress Systems, Inc. Atmospheric processes
Atm-01 Anneal
Test: temperature overshoot and stability
Atm-02 Metalalloy anneal
Test: temperature overshoot and stability
Atm-03 Dry oxidation
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04 Dry oxidation + liquid cleaning
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-04s Thin gate oxidation +Atmoscan®
test thickness: 500Å
test temperature: 1000
o
C
time indication: 60 min
base: bare Si wafer
testmethod: ellipsometer
Atm-05 Pyrogenic oxidation
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-5
base: bare Si wafer
testmethod: ellipsometer
Atm-06 Pyrogenic oxidation + liquid cleaning
Equipment: Tempress Systems, Inc. external torch
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-07 reserved
Atm-08 POCl
3
diffusion
Test sheet resistivity: 8 or 30 ohm/square
test temperature: 900
o
C deposition - 1000 drive-in
o
C
time indication: 30 min – 30 min
base: bare Si wafer
testmethod: four-point probe
Atm-09 reserved
Atm-10 reserved
Atm-11 reserved
Atm-12 Wet oxidation H
2
O bubbler
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
Atm-13 Wet oxidation H
2
O injection
Equipment: Tempress Systems, Inc. water injection
test thickness: 2000Å
test temperature: 1000
o
C
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
PROCESS SETUP AND ACCEPTANCE
P
ROCESS MANUAL
3.4-6
3.4.2.3 Tempress Systems, Inc. LPCVD processes
LP-01 Ramped poly
test thickness: 3000Å
test temperature: 625
o
C (ramped)
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer
LP-02 Flat poly
test thickness: 3000Å
test temperature: 610
o
C
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: ellipsometer
LP-03 Sipos
test thickness: 2000Å
test temperature: 670
o
C (ramped)
time indication: 30 min
base: 1000Å dryoxide on Si wafer
testmethod: incremental thickness/mass method or ellipsometer
LP-04 Nitride
test thickness: 900Å (blue)
test temperature: 800
o
C (ramped)
time indication: 30 min
base: bare Si wafer
testmethod: ellipsometer
LP-04s Low stress nitride
test thickness: 3000Å
test temperature: 850
o
C
time indication: 30 min
test refractive index: 2.15
test stress: <= 200MPa tensile
base: bare Si wafer
testmethod: ellipsometer, curvature
LP-05 Oxynitride
test thickness: 900Å
test temperature: 800
o
C
time indication: 30 min
test refractive index: 1.8
base: bare Si wafer
testmethod: ellipsometer