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Probe syst ems for Optoelectronics We  offer  design  and  manufacturing  of  systems  that  measure  optical  and  electric al  characteristics  of  the  various  optoelectronics (  light ‐ emitting  a…

Magnetic Stimulation Probe System

■ SPECIALTY PROBE SYSTEM

Semi‐automaticVerticalmagneticfieldprober

(± 1500Oe ,‐60゜Cto+200゜C)

Weofferdesignandmanufacturingofprobesystemstoapplymagneticfieldsforevaluatingalltypesof spintronics devices

(MRsensor,MRAM,Fram,FeRam)andHalldevices.

‐ Highlyadvancednonmagneticstructure

‐ Excellentmagneticfieldhysteresischaracteristics

‐ Supportssuperlowresidualfieldelectromagnets.

‐ Supportsin‐planemagneticfieldsandverticalmagneticfields.

‐ Provision

ofmagnetic fieldapplicationandmeasurementapplicationsoftware

‐ Provisionoftraceablemagneticfieldcalibrationtoolandcorrecti onsoftware

‐ Temperaturecharacteristicevaluationinrangefrom‐65°Cto+200°C

‐ Lowresistancemeasurements,RFmeasurements(upto67GHz)

‐ SupportsmanualproberandSemi‐automaticprober

Elemental technologies

PatenttechnologyofToeiScientificIndustrialCo.,Ltd.isusedforourprobesystemmountedwithverticalmagneticfieldelectromagnets

(JapanPatentApplicationLaid‐OpenDisclosureNumber2010‐212453)

ManualIn‐plane magneticfieldprober

(‐3000Oe to+3000Oe)

Specialty Probesystem

Probe systems for Optoelectronics

Weofferdesignandmanufacturingofsystemsthatmeasureopticalandelectricalcharacteristicsofthevariousoptoelectronics

(light‐emittingandlight‐receiving ) devicesonwafers.

Semi‐AutomaticProbeSystemwithBuilt‐in

MicroscopicPhotometricTube ForVCSEL,PD

/APDevaluation(fordiameterof2inches)

ManualOpticalFiberDirectConnectionTypeProber

ForVCSELevaluation(fordiameterof3inches)

Applications

‐ OpticalandelectricalcharacteristicsevaluationofVCSEL,LED orotherlight‐emittingdevices onwaferlevel

‐ Opticalandelectricalcharacteristicsevaluationofphotodiode, avalanchephotodiodeorotherlight‐receiving

devicesonwaferlevel

■ SPECIALTY PROBE SYSTEM

‐ I‐L‐V

‐ C ‐V

‐ PulsedI‐V

‐ Wavelength

‐ NFP

‐ FFP

‐ Modulationfrequency

‐ RIN

‐ Darkcurren t

‐ I‐V

‐ C ‐V

‐ Conversionefficiency

‐Wavelength‐conversionefficiency

‐ Cut‐offfrequency

‐ Modulationfrequency

‐ Transientresponse

VCSEL・LD・LEDcharacteristic

PD・APDcharacteristic

Manual 4 point resistivity prober

ThismanualmeasuringsystemistomeasureSiwafers,solarcell,sheetresistancesuchasLCD,andresistivitybyusing

four‐point probemethod.Weprovidemanualfour‐pointproberandKeithley’ssourcemetermodel2401asastandard

measuringsystem. ByusingaccessorymeasuringsoftwareforKeithley2401,automaticcalculationofsheet

resistance

andresistivitybecomepossible.

4‐pointprobe

Specialty Probesystem

Variouslightsource SingleMonochromator

Integratingsphere

PMT

■ APPLICATIONS

UltraLowSignalI‐V/C‐VMeasurement

High‐frequency/RFmeasurement

Thefollowingplotisaresultofmeasuringthecurrentvaluewhileimpressingthesweepvoltagetotheprobeandthechuckthat are

intheopenstate.Theresultshowsthenoiseandleakcurrentoftheprobeislessthan±10fA.With300mm‐thermalchuck,it

showsthe

noiseandleakcurrentislessthan±20fAinallthetemperatureranges ：‐60゜Cto+300゜C.Itprovesthatourprobe

systemcorrespondstoultralowsignalmeasurementapplicationthatrequiresmeasurementprecisionof1pAorless.

Theplotontherightismeasureddataofreversevoltageand

capacitancemeasurementofdiodedevice.

BycorrectingOPEN/SHORT/LOAD, itenablestodostable

C‐Vmeasurementof“fF” level.

C300‐60ULHigh/Lowtemperaturechuck

(‐60゜C～+300゜C)

Voltagesweeprange：‐10V～ +10V

ModelA74CJ1tip‐KelvinCoaxialProbe

Voltagesweeprange： ‐200V～ +200V

Note)Theabovemeasurementvalueisactualmeasurementvalueinourmeasurementenvironmentandnotguaranteedvalue

＜±3fA

OurprobestationcancovermeasuringfrequencybandofDCto67GHz duetoitshighrigidityandstablemechanism.

SystemintegrationwithVector networkanalyzer(VNA),RF probe,RF cable,calibrationsubstrateetc.,willsupporthighfrequency /

RFmeasurementwhichishighresolutionandexcelsinrepeatability.

Itsupportsfrom2‐porttomulti‐port

measurement,temperaturerangefrom10kto+250゜C,andcharacterizationunderultra‐high

vacuum(10e‐6Pa)environment.

UltralowcurrentI‐Vmeasurement

UltralowcapacitanceC‐Vmeasurement

Applications

‐65゜C～+200゜C：＜±10fA

+300゜C：＜±20fA