prober-english.pdf.pdf - 第17页

■ APPLICATIO NS Wafer ‐ Level  Reliability  Test Noise  Characterization Organic  Semiconductor  Device  Evaluation At  the  stage  of  resea rch  and  development of  organic  semiconductor  device  such…

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APPLICATIONS
UltraLowSignalIV/CVMeasurement
Highfrequency/RFmeasurement
Thefollowingplotisaresultofmeasuringthecurrentvaluewhileimpressingthesweepvoltagetotheprobeandthechuckthat are
intheopenstate.Theresultshowsthenoiseandleakcurrentoftheprobeislessthan±10fA.With300mmthermalchuck,it
showsthe
noiseandleakcurrentislessthan±20fAinallthetemperatureranges 60Cto+300C.Itprovesthatourprobe
systemcorrespondstoultralowsignalmeasurementapplicationthatrequiresmeasurementprecisionof1pAorless.
Theplotontherightismeasureddataofreversevoltageand
capacitancemeasurementofdiodedevice.
BycorrectingOPEN/SHORT/LOAD, itenablestodostable
CVmeasurementoffF level.
C30060ULHigh/Lowtemperaturechuck
(‐60C+300C)
Voltagesweeprange10V +10V
ModelA74CJ1tipKelvinCoaxialProbe
Voltagesweeprange 200V +200V
Note)Theabovemeasurementvalueisactualmeasurementvalueinourmeasurementenvironmentandnotguaranteedvalue
<±3fA
OurprobestationcancovermeasuringfrequencybandofDCto67GHz duetoitshighrigidityandstablemechanism.
SystemintegrationwithVector networkanalyzer(VNA),RF probe,RF cable,calibrationsubstrateetc.,willsupporthighfrequency /
RFmeasurementwhichishighresolutionandexcelsinrepeatability.
Itsupportsfrom2porttomultiport
measurement,temperaturerangefrom10kto+250C,andcharacterizationunderultrahigh
vacuum(10e6Pa)environment.
UltralowcurrentIVmeasurement
UltralowcapacitanceCVmeasurement
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Applications
65C+200C:<±10fA
+300C:<±20fA
APPLICATIONS
WaferLevelReliabilityTest
NoiseCharacterization
OrganicSemiconductorDeviceEvaluation
Atthestageofresearchanddevelopment oforganicsemiconductordevicesuchasOFETOTFTOELandOLED,itisnecessary
toperformevaluationunderhighpurityinertgastoavoidcharacteristicdegradationcausedbymoistureoroxygeninthe
atmosphere.Weoffersmallfootprintmanualproberandsemiautoproberthat
arespeciallydesignedfortheusageinsideofa
glovebox.Theyaresuitableforoperationbyglovedhand.
Manualproberforglovebox
Semiautomatic proberforglovebox
+300CHightemperaturemultisiteprobecard
Anoxygenmeterinsideofachamberandamass flow
controller (MFC)enable probingwithalowresidual
oxygenconcentrationoflessthan100ppm
WeofferprobesystemsthatsupportwaferlevelreliabilitytestsuchasEM,TDDB,HCI,NBTI,BT,etc.,.
Ourprobesystemsupport
varioustasksrequiredinwaferlevelreliabilitytestsuchashightemperatureupto+300C,longterm
testingoverweeks,stablecontactunderhightemperatureenvironment,mountingmultisiteprobecard,antioxidation
environmentbynitrogengaspurge,etc.,.
Ourprobesystemwithshieldchamber (HMP810SC/1210SCHSP200SC/300SC)hasoptionsettingofultralowfloornoise(UL).
Bychoosingthis“–UL option,itcansupportonwafernoisecharacterizationsuchas1/fnoise,randomtelegraph noise,(RTN),and
RFnoiseinthewidetemperaturerangefrom‐65Cto+200C.
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Applications
APPLICATIONS
HighPowerDeviceMeasurement
Safety
HighVoltageMeasurement( 10kV)High CurrentMeasurement ( 200Apulse )
Inhighpowerdeviceevaluationwheredangeroushighvoltageandhigh currentarerequired,safetymeasuresagainsthumanhaveto
betakeninanticipationofvariouscases.Ourprobesystemfor highpowerdevicemeasurementisequippedwithinterlocksystemthat
isstandard.Eachinterlocksystemwillpreventfromelectricshock,aburn,
andoxygenshortage
Interlockthatinterruptsappliedhighvoltagewithsafetylight curtain.
Interlockthatpreventsoxygenshortagewith
openairoxygenmonitor.
(Appliedtoasystemwithgaspurgefunction. )
HighVoltageProbing
High CurrentProbing
Weofferprobeaccessoriesthatsupportmaximum10kV200Apulseaswellaschucksthatsupportmaximum 5kV40Apulse.
Itsupportsdevicecharacterizationinthetemperaturerangefrom‐60Cto+300Cinordertosupportoperationtestinwidetemperature
rangefordevicessuchasinvehicledevices.
ChucksforPowerDevices
Highvoltageprobeunit
(±3kV60Cto+300C)
Insulationliquidimmersiontray
topreventelectricdischarge
High currentprobeunit
(Maximum200Apulse60Cto+300C)
+300CHighTemperatureTest, AntioxidantEnvironment
WhenevaluatingGaN orSiC highpowerdevice,hightemperaturetestat+300Cisrequired.Ourproductwithshieldchambermakesit
possibletodononoxidation probingwithalowresidualoxygenconcentrationoflessthan100ppmbypurgingnitrogengasintothe
chamber.
Weofferchuckunitsspeciallydesignedforhighpower
devices.
Roomtemperaturechuckandhightemperaturechuck
(RT ~+200C/+300C),
high/lowtemperaturechuck (‐40C/‐60C~+200C/+300C)
5kV 40Apulse
Thinwaferhandling
FeedthroughConnectorsandMeasurementCables
Weoffermeasurementcablesandfeedthroughconnectorsthatconnectvarioushighpowerdevicetesterswithourprobesystem.
Kelvin connection
TAIKO processwafer
Keysighttechnologies
B1505A HVTRIAX
TFF/KeithleyInstruments
2600PCT/4200PCT
HVTRIAX
SHV connector & cable
(~10kV)
IWATSU
CS3000/5000
Itsupportsclosedloopcontrolbyusingoxygenmeterinsideof
achamberandmass flowcontroller(MFC ).
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Applications