Samsung（三星）-KLM8G1GEAC-B001.pdf - 第29页

- 28 - IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR HEADQUARTERS OF SAMSUNG ELECTRONICS. datasheet e·MMC Rev. 1.0 KLMx…

100%1 / 32
- 27 -
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
7.3.3 HS200 Device Output Timing
t
PH
parameter is defined to allow device output delay to be longer than t
PERIOD
. After initialization, the t
PH
may have random phase relation to the clock.
The Host is responsible to find the optimal sampling point for the Device outputs, while switching to the HS200 mode.
Figure 9 and Figure 38 define Device output timing. While setting the sampling point of data, a long term drift, which mainly depends on temperature
drift, should be considered. The temperature drift is expressed by Δ
TPH
. Output valid data window (t
VW
) is available regardless of the drift (Δ
TPH
) but
position of data window varies by the drift, as describes in Figure 10 .
Figure 9. HS200 Device output timing
NOTE: V
OH
denotes V
OH
(min.) and V
OL
denotes V
OL
(max.).
[Table 38] Output timing
NOTE: Unit Interval (UI) is one bit nominal time. For example, UI=5ns at 200MHz.
Figure 10. Δ
TPH
consideration
Symbol Min. Max. Unit Remark
tPH 0 2 UI
Device output momentary phase from CLK input to CMD or DAT lines output.
Does not include a long term temperature drift.
Δ
TPH
-350
(ΔT=-20 deg.C)
+1550
(ΔT=90 deg.C)
ps
Delay variation due to temperature change after tuning.
Total allowable shift of output valid window (T
VW
) from last system Tuning
procedure
Δ
TPH
is 2600ps for ΔT from -25 deg.C to 125 deg.C during operation.
t
VW
0.575 - UI
t
VW
=2.88ns at 200MHz
Using test circuit in Figure 13 including skew among CMD and DAT lines
created by the Device.
Host path may add Signal Integrity induced noise, skews, etc. Expected T
VW
at
Host input is larger than 0.475UI.
- 28 -
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
7.4 Bus signal levels
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.
7.4.1 Open-drain mode bus signal level
[Table 39] Open-drain bus signal level
NOTE:
1) Because Voh depends on external resistance value (including outside the package), this value does not apply as device specification.
Host is responsible to choose the external pull-up and open drain resistance value to meet Voh Min value.
7.4.2 Push-pull mode bus signal level eMMC
The device input and output voltages shall be within following specified ranges for any V
DD
of the allowed voltage range.
[Table 40] Push-pull signal level— high-voltage eMMC
[Table 41] Push-pull signal level— 1.70-1.95 V
CCQ
voltage Range
NOTE:
1) 0.7*V
DD
for MMC4.3 and older revisions.
2) 0.3*V
DD
for MMC4.3 and older revisions.
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
V
DD
- 0.2
V Note 1)
Output LOW voltage
V
OL
0.3 V
I
OL
= 2 mA
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
0.75*V
DD
V
I
OH
= -100 uA@V
DD
min
Output LOW voltage
V
OL
0.125*V
DD
V
I
OL
= 100 uA@V
DD
min
Input HIGH voltage
V
IH
0.625*V
DD
V
DD
+ 0.3
V
Input LOW voltage
V
IL
V
SS
- 0.3 0.25*V
DD
V
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
V
DD
- 0.45V
V
I
OH
= -2mA
Output LOW voltage
V
OL
0.45V V
I
OL
= 2mA
Input HIGH voltage
V
IH
0.65*V
DD
1)
V
DD
+ 0.3
V
Input LOW voltage
V
IL
V
SS
- 0.3
0.35*V
DD
2)
V
V
t
input
high level
input
low level
output
high level
output
low level
undefined
V
DD
V
IH
V
OH
V
IL
V
SS
V
OL
- 29 -
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
8.0 DC PARAMETER
8.1 Active Power Consumption during operation
[Table 42] Active Power Consumption during operation
* Power Measurement conditions: Bus configuration =x8 @200MHz
* The measurement for max RMS current is the average RMS current consumption over a period of 100ms.
8.2 Standby Power Consumption in auto power saving mode and standby state.
[Table 43] Standby Power Consumption in auto power saving mode and standby state
NOTE:
Power Measurement conditions: Bus configuration =x8, No CLK
*Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
8.3 Sleep Power Consumption in Sleep State
[Table 44] Sleep Power Consumption in Sleep State
NOTE:
Power Measurement conditions: Bus configuration =x8, No CLK
1) In auto power saving mode, NAND power is alive.
2) In sleep mode, NAND power can be switched off. If NAND power is alive, it is same with the value in standby state.
8.4 Supply Voltage
[Table 45] Supply voltage
Density NAND Type CTRL NAND Unit
8 GB 64Gb x 1
150
80
mA
16 GB 64Gb x 2 130
32 GB 64Gb x 4
230
64 GB 64Gb x 8
Density NAND Type
CTRL NAND
Unit
25C(Typ) 85C 25C(Typ) 85C
8 GB 64Gb x 1
120 400
40 85
uA
16 GB 64Gb x 2 50 135
32 GB 64Gb x 4 70 235
64 GB 64Gb x 8 130 435
Density NAND Type
CTRL
NAND Unit
25C(Typ) 85C
8 GB 64Gb x 1
120 400
0
1)
uA
16 GB 64Gb x 2
32 GB 64Gb x 4
64 GB 64Gb x 8
Item Min Max Unit
V
DD
(V
CCQ
) 1.70 (2.7) 1.95 (3.6) V
V
DDF
(V
CC
) 2.7 3.6 V
Vss -0.5 0.5 V