Samsung（三星）-KLM8G1GEAC-B001.pdf - 第30页

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IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
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datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
7.4 Bus signal levels
As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.
7.4.1 Open-drain mode bus signal level
[Table 39] Open-drain bus signal level
NOTE:
1) Because Voh depends on external resistance value (including outside the package), this value does not apply as device specification.
Host is responsible to choose the external pull-up and open drain resistance value to meet Voh Min value.
7.4.2 Push-pull mode bus signal level eMMC
The device input and output voltages shall be within following specified ranges for any V
DD
of the allowed voltage range.
[Table 40] Push-pull signal level— high-voltage eMMC
[Table 41] Push-pull signal level— 1.70-1.95 V
CCQ
voltage Range
NOTE:
1) 0.7*V
DD
for MMC4.3 and older revisions.
2) 0.3*V
DD
for MMC4.3 and older revisions.
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
V
DD
- 0.2
V Note 1)
Output LOW voltage
V
OL
0.3 V
I
OL
= 2 mA
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
0.75*V
DD
V
I
OH
= -100 uA@V
DD
min
Output LOW voltage
V
OL
0.125*V
DD
V
I
OL
= 100 uA@V
DD
min
Input HIGH voltage
V
IH
0.625*V
DD
V
DD
+ 0.3
V
Input LOW voltage
V
IL
V
SS
- 0.3 0.25*V
DD
V
Parameter Symbol Min Max. Unit Conditions
Output HIGH voltage
V
OH
V
DD
- 0.45V
V
I
OH
= -2mA
Output LOW voltage
V
OL
0.45V V
I
OL
= 2mA
Input HIGH voltage
V
IH
0.65*V
DD
1)
V
DD
+ 0.3
V
Input LOW voltage
V
IL
V
SS
- 0.3
0.35*V
DD
2)
V
V
t
input
high level
input
low level
output
high level
output
low level
undefined
V
DD
V
IH
V
OH
V
IL
V
SS
V
OL
- 29 -
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
8.0 DC PARAMETER
8.1 Active Power Consumption during operation
[Table 42] Active Power Consumption during operation
* Power Measurement conditions: Bus configuration =x8 @200MHz
* The measurement for max RMS current is the average RMS current consumption over a period of 100ms.
8.2 Standby Power Consumption in auto power saving mode and standby state.
[Table 43] Standby Power Consumption in auto power saving mode and standby state
NOTE:
Power Measurement conditions: Bus configuration =x8, No CLK
*Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
8.3 Sleep Power Consumption in Sleep State
[Table 44] Sleep Power Consumption in Sleep State
NOTE:
Power Measurement conditions: Bus configuration =x8, No CLK
1) In auto power saving mode, NAND power is alive.
2) In sleep mode, NAND power can be switched off. If NAND power is alive, it is same with the value in standby state.
8.4 Supply Voltage
[Table 45] Supply voltage
Density NAND Type CTRL NAND Unit
8 GB 64Gb x 1
150
80
mA
16 GB 64Gb x 2 130
32 GB 64Gb x 4
230
64 GB 64Gb x 8
Density NAND Type
CTRL NAND
Unit
25C(Typ) 85C 25C(Typ) 85C
8 GB 64Gb x 1
120 400
40 85
uA
16 GB 64Gb x 2 50 135
32 GB 64Gb x 4 70 235
64 GB 64Gb x 8 130 435
Density NAND Type
CTRL
NAND Unit
25C(Typ) 85C
8 GB 64Gb x 1
120 400
0
1)
uA
16 GB 64Gb x 2
32 GB 64Gb x 4
64 GB 64Gb x 8
Item Min Max Unit
V
DD
(V
CCQ
) 1.70 (2.7) 1.95 (3.6) V
V
DDF
(V
CC
) 2.7 3.6 V
Vss -0.5 0.5 V
- 30 -
IF THERE IS ANY OTHER OPERATION TO IMPLEMENT IN ADDITION TO SPECIFICATION
IN THE DATASHEET OR JEDEC STANDARD, PLEASE CONTACT EACH BRANCH OFFICE OR
HEADQUARTERS OF SAMSUNG ELECTRONICS.
datasheet
e·MMC
Rev. 1.0
KLMxGxGEAC-B001
SAMSUNG CONFIDENTIAL
8.5 Bus Signal Line Load
The total capacitance C
L
of each line of the e·MMC bus is the sum of the bus master capacitance C
HOST
, the bus capacitance C
BUS
itself and the capac-
itance C
DEVICE
of the e·MMC connected to this line:
C
L
= C
HOST
+ C
BUS
+ C
DEVICE
The sum of the host and bus capacitances should be under 20pF.
[Table 46] Bus SIgnal Line Load
Parameter Symbol Min Typ. Max Unit Remark
Pull-up resistance for CMD R
CMD
4.7 100 KOhm to prevent bus floating
Pull-up resistance for DAT0-DAT7 R
DAT
10 100 KOhm to prevent bus floating
Internal pull up resistance DAT1-DAT7
R
int
10 150 KOhm
to prevent unconnected lines
floating
Single e·MMC capacitance C
BGA
12 pF
Maximum signal line inductance 16 nH f
PP
<= 52 MHz