GJB Z 299C-2006 电子设备可靠性预计手册.pdf - 第90页

5 表 6 - 7 ( 续 ) 单 位 为 1 0 ⁻ ⁴ / h 门数 工艺 环 境 Gg Gss C Gn GMn Gue M Ns Nsi Ng Nu An Au Ac Aue ARw S M M, 15 00 1~ 2000 0 双极 4.08 2 4.79 5 7.54 5 13. 392 16. 622 24.9 68 13 .8 20 15. 787 10. 540 19. 352 33. 473 29. 028 44.7…

100%1 / 160
表6-7非密封单片数字集成电路的通用失效率L
单位为10/h
门数
工艺
环 境
C
Gus
G
Gg
GMI
Gu
Mp
Ns
Ns
No
Nu
Au
Au
Ac
Auc
Arw
S
M
M
1~20
双极
0.115
0.154
0.245
0.572
0.601
0.996
0.596
0.664
0.412
0.863
1.288
1.294
L.799
0.896
1242
1.612
0.131
2.648
1294
MOS
0.097
0.134
0.219
0.528
0.558
0.936
0.550
0.615
0.377
0.804
1.227
1.214
1.723
0.837
1.195
1.516
0.112
2.497
1214
21~50
双极
0.146
0.194
0.308
0.704
0.748
1.231
0.733
0818
0.511
1.059
1.596
1.587
2,222
1.105
1547
1.973
0.165
3,226
1587
MOS
0.118
0.163
0.266
0.638
0.677
1.133
0.665
0.743
0.456
0.970
1.488
1.467
2.088
1.013
1.453
1.829
0.136
3.009
1.467
51~
100
双极
0.178
0.234
0.371
0.837
0.897
1469
0.871
0.974
0.610
1.258
1.907
1.885
2.649
1.317
1.854
2.340
0.200
3.817
1.885
MOS
0.139
0.192
0.313
0.750
0.797
1.334
0.782
0874
0.537
1.141
1.752
1.725
2.458
1.192
1.711
2.151
0.160
3.537
1.725
101~
500
双极
0.346
0,430
0.672
1,366
1.538
2.427
1.417
1.593
1.028
2.017
3.169
3.011
4.330
2.164
3.144
3,688
0.379
5.890
3.011
MOS
0.226
0.305
0.497
L.144
1.248
2,058
1.192
1.338
0.828
1.732
2.720
2.622
3.793
1.832
2,688
3.253
0.258
5.306
2.622
501~
1000
双极
0.399
0.486
0.756
1466
1.695
2.628
1.518
1.713
1.120
2.145
3.447
3.200
4.671
2.335
3.460
3.892
0.434
6.142
3.200
MOS
0.240
0319
0.522
1.174
1.302
2.131
1.221
1374
0.856
1.772
2.831
2.685
3,934
1.890
2,821
3.321
0.272
5.388
2.685
1001~
2000
双极
0.769
0.934
1.439
2.798
3.195
4.959
2.897
3.260
2.135
4.088
6.464
6.077
8.765
4.420
6.446
7.402
0.835
11.708
6.077
MOS
0.448
0.605
0.982
2.269
2.454
4.054
2.363
2,648
1.641
3.433
5,332
5.186
7.439
3.616
5.241
6.441
0.511
10.522
5.186
2001~
3000
双极
1.091
1259
1.894
3.266
3.932
5.826
3.367
3.811
2.597
4.647
7.617
6.843
10.101
5.170
7.758
8.182
1.158
12.532
6.843
MOS
0.522
0.679
1.101
2.392
2.687
4.343
2.486
2.802
1.762
3.589
5.761
5.426
7.960
3.852
5.756
6.685
0.585
10.778
5.426
3.001~
5000
双极
1,511
1.818
2.768
5.288
6.033
9.303
5.473
6.151
4.059
7.688
12.079
11.381
16.331
8.307
12.028
13.839
1.634
21.831
11.381
MOS
0.825
1.121
1.809
4.236
4,520
7.501
4.413
4,935
3,052
6.415
9,809
9.670
13.710
6.710
9.566
12.038
0.943
19.733
9.670
5.001-
7500
双极
1.687
1.997
3.026
5.566
6.475
9.840
5,752
6.481
4.327
8.030
12.808
11.864
17.196
8.767
12.860
14.342
1.811
22.395
11.864
MOS
0.856
1153
1.862
4.294
4,630
7.642
4.472
5.008
3.107
6.491
10.022
9.790
13.976
6.825
9.823
12.163
0.975
19.874
9.790
7501~
10000
双极
2.031
2.446
3.725
7.132
8.127
12.542
7.381
8.295
5.470
10.373
16.283
15.356
22.023
11.202
16.207
18.680
2.197
29.482
15.356
MOS
1.007
1.408
2.238
5.526
5.618
9.504
5.766
6.398
3.922
8.403
12.204
12.596
17.199
8,586
11.585
15.804
1.167
26.230
12.596
10.001~
15.000
双极
3.480
4.939
6.349
10,932
13.835
20.550
11.267
12.911
8.696
15.705
27.662
23.558
36.746
17970
28.923
28.029
3.703
42,558
23.558
MOS
1.310
1852
2.948
7.398
7.458
12.687
7.723
8.560
5.227
11.274
16.265
16.901
22.978
1L474
15.380
21.242
1.527
35.351
16.901
5
表6-7(续)
单位为10 ⁻⁴ / h
门数
工艺
环 境
Gg
Gss
C
Gn
GMn
Gue
M
Ns
Nsi
Ng
Nu
An
Au
Ac
Aue
ARw
S
M
M,
15001~
20000
双极
4.082
4.795
7.545
13.392
16.622
24.968
13.820
15.787
10.540
19.352
33.473
29.028
44.703
21.898
34.721
34.732
4.367
53.270
29,028
MOS
1.634
2.329
3.709
9410
9.433
16.106
9.827
10.884
6.629
14.360
20.627
21.530
29.188
14.578
19.454
27,092
1912
45.168
21,530
20.001~
30000
双极
4.744
5.621
8.851
16.043
19.649
29.744
16.569
18.888
12.534
23,273
39.764
34.911
53.299
26.140
41.019
41.927
5.094
64.732
34.911
MOS
1.979
2.837
4.520
11.552
11.536
19.746
12.066
13.358
8.122
17.646
25.271
26.457
35.798
17.881
23.793
33.317
2.322
55.613
26.457
30001~
60000
双极
5.943
6.997
11.012
19.650
24.307
36.585
20.282
23.157
15.437
28.424
49.010
42637
65.514
32.103
50.766
51.065
6.365
78.454
42.637
MOS
2.373
3,402
5.422
13.863
13.840
23,695
14.481
16.030
9.745
21.177
30.323
31.752
42.957
21.458
28.545
39,988
2.785
66.753
31.752
60001~
90000
MOS
2.771
3.981
6.344
16.259
16212
27.779
16.984
18.799
11.422
24.844
35.541
37.251
50.367
25.160
33.439
46.924
3.255
78.361
37.25
90.001一
200000
MOS
2.793
4.002
6.378
16.297
16.275
27.858
17.023
18.845
11.458
24.893
35.653
37.323
50.503
25.227
33.568
47.001
3.277
78.452
37.323
200001-
400000
MOS
3.289
4.688
7.466
18.937
18.986
32.415
19.777
21.905
13.342
28.899
41.514
43,327
58.741
29.338
39.157
54.518
3.849
90.889
43.327
400001~
600000
MOS
3.360
4.760
7.577
19.062
19.193
32.676
19.903
22.056
13.460
29.059
41.882
43.564
59.190
29.558
39.581
54.769
3.920
9L185
43.564
600001~
800000
MOS
3.797
5.393
8,585
2L.665
21.778
37.116
22.622
25.064
15.284
33.039
47.560
49.532
67.244
33.581
44.914
62.292
4.436
103.763
49,532
800001~
950000
MOS
3.839
5.435
8.650
21.738
21.900
37.270
22.695
25.153
15.354
33.133
47.775
49.671
67.507
33.710
45.163
62439
4.477
103.936
49.67
950001~
1.500000
MOS
4.257
6.053
9.638
24.367
24.470
41.732
25.445
28.189
17.182
37.170
53.464
55.725
75.614
37.763
50.466
70.095
4.975
116.798
55.725
1500.001~
2500000
MOS
4.389
6.188
9.845
24.600
24.857
42.220
25.680
28.471
17.402
37.468
54.151
56.167
76.451
38.173
51.260
70.562
5.108
117.346
56.167
2500001~
3.500000
MOS
5.313
7.533
11.990
30.190
30.384
51.744
31.522
34.931
21.312
46.028
66.317
69.004
93.734
46.809
62661
86.760
6.201
144.467
69.004
3500001~
4500000
MOS
5.817
8.256
13.143
33.141
33.327
56.785
34.604
38.342
23.386
50.536
72.768
75.762
102.874
51.374
68.731
95.273
6.792
158.681
75.762
4500001~
5000000
MOS
6.319
8.983
14.302
36.141
36.304
61.902
37.739
41.810
25.488
55.126
79.309
82.644
112.157
56.012
74,872
103.950
7385
173.194
82644
表6-8密封静态随机存取存储器(SRAM)的通用失效率G
单位为10⁻⁴/h
位数
工艺
环 境
G
ʙ
Gus
Gg
Gn2
GMi
GM
M
Ns
Nsi
Ns
Nu
Au
Au
A
Auc
Aew
S,
M
M:
1~320
双极
0.185
0.236
0.381
0.795
0.914
1456
0.825
0.933
0.593
1.185
1.939
L791
2.661
1.287
1.955
2.195
0.205
3.506
1.791
MoS
0.125
0.165
0.277
0.611
0.708
1.152
0.635
0.721
0.448
0.925
1.574
1.417
2.187
1.009
1.617
1.743
0.141
2.803
L417
321~
576
双极
0.218
0.274
0.444
0.904
1.057
1.669
0.937
1,063
0.679
1.343
2.232
2.033
3,052
1.472
2.267
2.481
0.241
3.940
2.033
MOS
0.141
0.184
0.309
0.660
0.788
1.269
0.686
0.782
0.489
0.996
1.753
1.532
2.426
1.105
1.827
1.875
0.158
2.987
1.532
577-
1120
双极
0.260
0.324
0.525
1047
1.242
1.947
1.085
1.233
0.792
1.551
2.614
2.349
3.562
1.713
2.671
2.858
0.286
4.512
2.349
MOS
0.162
0.207
0.351
0.723
0.891
1.418
0.750
0.860
0.541
1.087
1.982
1.680
2.731
1227
2.096
2.042
0.180
3.221
L680
1121~
2240
双极
0.375
0.455
0.732
1.385
1691
2.602
1.433
1.636
1.067
2.034
3.507
3.076
4.737
2.280
3.623
3.713
0.407
5.782
3.076
MOS
0.234
0.289
0.493
0.939
1.227
1.905
0.972
1.127
0.722
1.399
2.703
2.175
3,684
1.630
2.921
2.611
0.256
4.028
2.175
2241~
5000
双极
0.457
0.550
0.887
1.650
2.037
3.116
1.705
1.950
1.278
2.415
4.211
3.655
5.673
2.725
4.371
4.399
0.494
6.817
3.655
MoS
0.278
0.337
0.578
1,059
1.433
2.196
1.094
1.277
0.824
1.570
3.153
2.453
4.277
1.867
3.456
2.922
0.302
4.447
2.453
5001~
11000
双极
0.563
0.674
1.086
1.995
2.485
3.784
2.062
2.361
1.552
2.916
5.124
4.414
6.890
3.305
5.338
5.301
0.607
8.184
4.414
MOS
0.335
0.398
0.688
1.212
1.696
2.570
1250
1.469
0.956
1.789
3.730
2.809
5.036
2.169
4.141
3.320
0.360
4.983
2.809
11001~
17000
双极
0.843
0.990
1.584
2.791
3.544
5.315
2,879
3.306
2.202
4.042
7.207
6.105
9.618
4.634
7.558
7.283
0.901
11.109
6.105
MOS
0.528
0.611
1.053
1.735
2.540
3.764
1.785
2.115
1.402
2.531
5.509
3.987
7.363
3.155
6.199
4.652
0.561
6.814
3.987
17001~
38000
双极
1.047
1.226
1.962
3.429
4.379
6.548
3.537
4.065
2.714
4.960
8.890
7493
1L849
5.704
9,343
8,925
1.119
13.578
7.493
MoS
0.648
0.739
1.280
2,032
3.071
4.501
2.087
2.490
1.665
2.949
6.651
4.668
8,852
3.750
7,567
5.402
0.684
7.788
4.668
38001~
74000
双极
1.556
1.783
2.830
4.699
6.154
9.025
4.835
5.578
3.787
6.718
12.277
10.119
16.209
7.840
13.018
11.942
1.647
17.868
10.119
MOS
1.023
1.133
1.954
2.850
4.563
6.504
2.916
3.521
2.413
4,068
9.710
6.464
12.759
5.372
11.229
7.339
1.067
10.180
6.464