GJB Z 299C-2006 电子设备可靠性预计手册.pdf - 第92页

3 表 6 - 8 ( 续 ) 单位 为 1 0 ⁴ / h 位数 工艺 环 境 Gg GMs Gn Gg Gn GMz M, Ns Ns Ns Nu A Au Ag Aue Agw S M M; 7 4 . 0 0 1 ~ 150 000 双极 2.69 9 2.96 1 4.69 1 6.84 2 9.79 4 13. 702 7.00 0 8.20 5 5.79 3 9.51 6 19 .0 01 14 .3 59 24.5 16…

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表6-8密封静态随机存取存储器(SRAM)的通用失效率G
单位为10⁻⁴/h
位数
工艺
环 境
G
ʙ
Gus
Gg
Gn2
GMi
GM
M
Ns
Nsi
Ns
Nu
Au
Au
A
Auc
Aew
S,
M
M:
1~320
双极
0.185
0.236
0.381
0.795
0.914
1456
0.825
0.933
0.593
1.185
1.939
L791
2.661
1.287
1.955
2.195
0.205
3.506
1.791
MoS
0.125
0.165
0.277
0.611
0.708
1.152
0.635
0.721
0.448
0.925
1.574
1.417
2.187
1.009
1.617
1.743
0.141
2.803
L417
321~
576
双极
0.218
0.274
0.444
0.904
1.057
1.669
0.937
1,063
0.679
1.343
2.232
2.033
3,052
1.472
2.267
2.481
0.241
3.940
2.033
MOS
0.141
0.184
0.309
0.660
0.788
1.269
0.686
0.782
0.489
0.996
1.753
1.532
2.426
1.105
1.827
1.875
0.158
2.987
1.532
577-
1120
双极
0.260
0.324
0.525
1047
1.242
1.947
1.085
1.233
0.792
1.551
2.614
2.349
3.562
1.713
2.671
2.858
0.286
4.512
2.349
MOS
0.162
0.207
0.351
0.723
0.891
1.418
0.750
0.860
0.541
1.087
1.982
1.680
2.731
1227
2.096
2.042
0.180
3.221
L680
1121~
2240
双极
0.375
0.455
0.732
1.385
1691
2.602
1.433
1.636
1.067
2.034
3.507
3.076
4.737
2.280
3.623
3.713
0.407
5.782
3.076
MOS
0.234
0.289
0.493
0.939
1.227
1.905
0.972
1.127
0.722
1.399
2.703
2.175
3,684
1.630
2.921
2.611
0.256
4.028
2.175
2241~
5000
双极
0.457
0.550
0.887
1.650
2.037
3.116
1.705
1.950
1.278
2.415
4.211
3.655
5.673
2.725
4.371
4.399
0.494
6.817
3.655
MoS
0.278
0.337
0.578
1,059
1.433
2.196
1.094
1.277
0.824
1.570
3.153
2.453
4.277
1.867
3.456
2.922
0.302
4.447
2.453
5001~
11000
双极
0.563
0.674
1.086
1.995
2.485
3.784
2.062
2.361
1.552
2.916
5.124
4.414
6.890
3.305
5.338
5.301
0.607
8.184
4.414
MOS
0.335
0.398
0.688
1.212
1.696
2.570
1250
1.469
0.956
1.789
3.730
2.809
5.036
2.169
4.141
3.320
0.360
4.983
2.809
11001~
17000
双极
0.843
0.990
1.584
2.791
3.544
5.315
2,879
3.306
2.202
4.042
7.207
6.105
9.618
4.634
7.558
7.283
0.901
11.109
6.105
MOS
0.528
0.611
1.053
1.735
2.540
3.764
1.785
2.115
1.402
2.531
5.509
3.987
7.363
3.155
6.199
4.652
0.561
6.814
3.987
17001~
38000
双极
1.047
1.226
1.962
3.429
4.379
6.548
3.537
4.065
2.714
4.960
8.890
7493
1L849
5.704
9,343
8,925
1.119
13.578
7.493
MoS
0.648
0.739
1.280
2,032
3.071
4.501
2.087
2.490
1.665
2.949
6.651
4.668
8,852
3.750
7,567
5.402
0.684
7.788
4.668
38001~
74000
双极
1.556
1.783
2.830
4.699
6.154
9.025
4.835
5.578
3.787
6.718
12.277
10.119
16.209
7.840
13.018
11.942
1.647
17.868
10.119
MOS
1.023
1.133
1.954
2.850
4.563
6.504
2.916
3.521
2.413
4,068
9.710
6.464
12.759
5.372
11.229
7.339
1.067
10.180
6.464
3
表6-8(续) 单位为10⁴/h
位数
工艺
环 境
Gg
GMs
Gn
Gg
Gn
GMz
M,
Ns
Ns
Ns
Nu
A
Au
Ag
Aue
Agw
S
M
M;
74.001~
150000
双极
2.699
2.961
4.691
6.842
9.794
13.702
7.000
8.205
5.793
9.516
19.001
14.359
24.516
11.736
20.844
16.457
2.804
23.277
14.359
MOS
1.137
1.269
2.185
3.268
5.121
7.354
3.347
4.023
2.740
4.683
10.913
7.419
14.383
6.098
12.534
8.475
1.190
11.909
7.419
150001~
300000
双极
3.954
4.256
6.668
9.140
13.495
18.419
9.321
10.977
7.934
12.485
25.587
18.741
32.588
15.726
28.367
21.153
4,075
28.991
18.741
MOS
1.731
1.877
3.215
4.411
7.315
10.209
4.499
5.472
3.828
6.202
15.291
9.854
19.883
8.395
17.840
1L022
1.789
14.816
9.854
300001~
600000
双极
4.795
5.144
8.057
10.916
16.249
22.082
11.125
13.123
9.521
14.866
30.727
22.316
39.047
18.829
34.166
25.106
4.934
34.172
22.316
MoS
2.054
2.195
3.772
4928
8.518
11.717
5.012
6.157
4.364
6.862
17.741
10.971
22.931
9.561
20.957
12.099
2.110
15.764
10.971
600-001~
1048576
双极
5.979
6.463
10.129
14.101
20.598
28.275
14.392
16.915
12.164
19.337
39.193
29.026
50.063
24.182
43.282
32.901
6.172
45.495
29.026
600001~
1200000
MOS
2.707
2.969
5.072
7.227
11.612
16.388
7.385
8.919
6.176
10.233
24.341
16.184
31.801
13.556
28.121
18.287
2.812
25.119
16.184
1200001~
2400000
MOS
3.263
3.551
6.077
8.444
13.856
19.410
8.618
10.457
7.290
11.901
28.991
18.879
37.757
15.993
33.715
21.189
3.378
28.695
18.879
2400001~
4800000
MOS
3.947
4.268
7.314
9943
16.620
23.129
10.135
12.352
8.661
13.954
34.716
22.198
45.090
18.992
40.602
24.762
4.075
33.097
22.198
4800001~
9600000
MOS
4.790
5.149
8.838
11.788
20.022
27.708
12.004
14.684
10.349
16.483
41.765
26.283
54.118
22.685
49.081
29.161
4.934
38.516
26.283
9600001~
19200000
MOS
5.827
6.235
10.713
14.060
24.211
33.346
14.305
17.555
12.427
19.595
50.442
31.312
65.233
27.231
59.519
34.577
5.990
45.188
31.312
19200001~
38400000
MOS
7.104
7.572
13.022
16.857
29.368
40.287
17.137
21.090
14.986
23.428
61.126
37.504
78.917
32.828
72.371
41245
7.291
53.402
37.504
38400001~
67108864
Mos
8.677
9.217
15865
20.300
35.717
48.833
20.624
25.442
18.137
28.146
74.278
45.127
95.764
39.719
88.192
49.454
8.893
63.515
45.127
表6-9非密封静态随机存取存储器(SRAM)的通用失效率雄 单位为10⁻%/h
位数
工艺
环 境
Gg
Gus
Gg
Gg
Gy
Ge
M
Na
Ns
Ns
Nu
A
Au
A
Auc
ARw
Sy
M
M;
1~320
双极
0.268
0.328
0.525
1.021
1.215
1.887
1.057
1.201
0.779
1.504
2.520
2.267
3.418
1.662
2.572
2.750
0.292
4.322
2.267
MoS
0.161
0.212
0.353
0.770
0.896
1.451
0.800
0.908
0.566
1.162
1.979
1780
2.744
1.272
2.032
2.186
0.181
3.507
1.780
321~
576
双极
0.318
0.384
0.615
1.157
1.406
2.159
1.197
1.364
0.893
1.695
2.898
2.557
3.910
1.896
2.985
3.086
0.345
4.805
2.557
MOS
0.182
0.235
0.394
0.827
0.993
1.590
0.858
0.980
0.616
1.244
2.193
1.912
3.026
1.384
2.286
2.335
0.203
3.708
1912
577~
1120
双极
0.383
0.456
0.730
1.334
1.654
2.512
L.379
1.577
1.040
1.945
3.387
2.935
4.548
2.199
3.517
3.525
0.412
5.440
2.935
MOS
0.208
0.264
0.446
0.900
1.119
1.768
0.933
1.072
0.678
1.348
2.468
2.082
3.387
1.528
2.612
2.525
0.231
3.964
2,082
1121~
2240
双极
0.660
0.751
L181
1.931
2.531
3.687
1.986
2.289
1.565
2.746
4.998
4.121
6.576
3.207
5.297
4.852
0.696
7.229
4.121
MOS
0.364
0.430
0.729
1.272
1,750
2.636
1.312
1.535
1.007
1.866
3.766
2.904
5.061
2.241
4.133
3.434
0.390
5.158
2.904
2241一
5.000
双极
0.813
0.918
1.443
2.303
3.067
4.428
2.365
2.734
1.883
3.258
6.022
4.890
7.889
3.842
6.421
5.729
0.855
8.454
4.890
MOS
0.437
0.508
0.865
1.443
2.062
3.061
1.485
1.751
1.161
2.103
4.424
3.288
5.910
2.583
4.923
3.851
0.466
5.683
3.288
5.001~
11000
双极
1.009
1.132
1.779
2.785
3.756
5.385
2.858
3,312
2.294
3,925
7.343
5.891
9.586
4.664
7.869
6.872
1,058
10.062
5.891
MOS
0.532
0.608
1.040
1.661
2.462
3.606
1,707
2.027
1.358
2.405
5.267
3.780
6.998
3.022
5.937
4.386
0.562
6.355
3.780
11001~
17000
双极
1.832
1.994
3,070
4.404
6.162
8.526
4,502
5.238
3.753
6.052
11.614
8,993
14.883
7.366
12.605
10.295
1.897
14.525
8.993
MOS
1.065
1.164
1.966
2.775
4.424
6.209
2.834
3.415
2.381
3.908
9.147
6.141
11.903
5.154
10.521
6.931
1.105
9.497
6.141
17001~
38000
双极
2.295
2.490
3.831
5.426
7.655
10.540
5.542
6.458
4.648
7,431
14.380
11.039
18.380
9.094
15.657
12.595
2.373
17.652
11.039
MOS
1.329
1.436
2.430
3.310
5.434
7.542
3.375
4.092
2.881
4.628
11.197
7.301
14.502
6.228
13.000
8.159
1.372
10.949
7301
38001~
74000
双极
4.158
4.403
6.626
8.638
12.581
16.707
8.785
10.268
7.656
11.495
22.721
16.850
28.463
14.396
25.027
18.814
4.256
25.194
16850
MOS
2.712
2.838
4.708
5.748
9.986
13.304
5.824
7.141
5.241
7.775
19.788
12.192
25.083
10.924
23.308
13.206
2.762
16.502
12.192