Utah-94-721002-System-Manual.pdf - 第143页
System Manual = lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~= qÉÅÜåçäçÖó= mä~ëã~ä~Ä Plasmalab Process Guide Process Information (Information contained in th is document is confi dential) Printed: 08 January 2006 09:37 Page 1 of 30 Issue 1:…
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This Section contains the OIPT ‘Process Guide’ document. Note that this document includes a
Glossary of Terms.
Process Guide and Glossary
Issue 1: December 03 Page 7-2 of 2 Printed: 25 May 2005 10:16
System Manual= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= mä~ëã~ä~Ä
Plasmalab Process Guide
Process Information (Information contained in this document is confidential)
Printed: 08 January 2006 09:37 Page 1 of 30 Issue 1: December 03
mä~ëã~ä~Ä= lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó= System Manual
Contents
1 Introduction......................................................................................................................................3
1.1 About this guide........................................................................................................................................3
1.2 Health and safety ......................................................................................................................................3
1.3 Terminology...............................................................................................................................................3
1.4 Document structure...................................................................................................................................3
2 The clean room.................................................................................................................................4
3 Processes...........................................................................................................................................5
3.1 General.......................................................................................................................................................5
3.2 RIE processes ..............................................................................................................................................6
3.2.1 RIE operating parameter ranges ....................................................................................................6
3.2.2 ICP operating parameter ranges ....................................................................................................7
3.2.3 Low-pressure strike facility .............................................................................................................8
3.2.4 DC bias..............................................................................................................................................8
3.2.4.1 Electronegative gas mixtures ......................................................................................................8
3.2.4.2 ICP sources ....................................................................................................................................9
3.2.4.3 DC bias polarity ............................................................................................................................9
3.2.4.4 DC bias control .............................................................................................................................9
3.2.4.5 DC bias reproducibility.................................................................................................................9
3.2.5 Arcing / pitting...............................................................................................................................10
3.2.6 Etch process chamber cleaning recipes........................................................................................10
3.2.7 Sample cooling / gluing.................................................................................................................11
3.2.8 Use of helium backing for effective process temperature control............................................12
3.2.8.1 Scope...........................................................................................................................................12
3.2.8.2 Purpose........................................................................................................................................12
3.2.8.3 Simple Method to check Helium backing.................................................................................12
3.2.9 Gases with low vapour pressure...................................................................................................14
3.2.10 Endpoint detection techniques ....................................................................................................14
3.2.10.1 Optical emission spectroscopy................................................................................................14
3.2.10.2 Laser interferometry...............................................................................................................15
3.2.10.3 Comparison of OES and laser endpoint techniques.............................................................15
3.2.10.4 Typical OES endpoint wavelengths........................................................................................16
3.2.10.5 Endpoint algorithm examples................................................................................................16
3.2.11 Gas calibration factors...................................................................................................................17
3.2.12 Exhaust emissions ..........................................................................................................................17
3.3 PECVD processes......................................................................................................................................18
3.3.1 PECVD operating parameter ranges ............................................................................................18
3.3.2 Low frequency matching ..............................................................................................................18
3.3.3 Premature flaking of chamber wall / showerhead material ......................................................19
3.3.4 PECVD particles..............................................................................................................................20
3.3.5 Enlarging of showerhead holes....................................................................................................21
3.3.6 Optical emission endpoint detector for chamber clean process................................................21
3.4 Process troubleshooting..........................................................................................................................23
3.4.1 Partial process failure....................................................................................................................23
3.4.1.1 Example problems......................................................................................................................23
3.4.1.2 Typical causes..............................................................................................................................23
3.4.2 Total process failure ......................................................................................................................23
3.4.2.1 Example problems......................................................................................................................23
3.4.2.2 Typical causes..............................................................................................................................23
4 Glossary of terms...........................................................................................................................25
5 OIPT locations worldwide..............................................................................................................30
Process Information (Information contained in this document is confidential)
Issue 1: December 03 Page 2 of 30 Printed: 08 January 2006 09:37