SIPLACE CA4 V2规格说明书.pdf - 第32页
32 SIPLACE Wafer System Component supply T echnical data Flip Chip Die Attach Minimum die thickness (silicium) - without com- ponent sensor 50 µm 50 µm Minimum die thickness (silicium) - with compo- nent sensor 100 µm 10…
31
SIPLACE Wafer System
Overview
Description
The SIPLACE Wafer System
(SWS) makes the compo-
nents available to the place-
ment head, directly from the
wafer. The SWS therefore
extends the component
spectrum of the established
SIPLACE X machines, by
enabling placement of bare
dies from wafers.
The wafers are supplied fully
automatically out of the wafer
cassette and the dies inside
can be processed in the
established placement pro-
cedures.
The SWS is completely inte-
grated into the locations of
the SIPLACE CA placement
system. Each location can be
equipped with an SWS or an
X table.
Flip chip process - func-
tion
The wafer is fully automati-
cally pulled out of the wafer
cassette and is then trans-
ported to the wafer table. The
wafer table positions the die
above the ejection system
that releases the die from the
wafer foil. After this release
procedure, the flip unit noz-
zle takes the die, rotates it by
180° and makes it available
to the placement head for
pickup.
Options
The process spectrum is
supplemented by the follow-
ing options:
– Die Attach Unit:
The Die Attach Unit takes
the die from the flip unit
nozzle and turns it, so that
it has the same top-bottom
orientation on the board
as it had on the wafer.
– Linear Dipping Unit
The Linear Dipping Unit
distributes precise layers
of flux for the flip chip pro-
cess. After taking over
from the flip unit, the
placement head dips the
die into the flux layer.
SIPLACE Wafer System (SWS)
32
SIPLACE Wafer System
Component supply
Technical data Flip Chip Die Attach
Minimum die thickness (silicium) - without com-
ponent sensor
50 µm 50 µm
Minimum die thickness (silicium) - with compo-
nent sensor
100 µm 100 µm
Minimum bump size 50 µm n/a
Minimum bump grid 100 µm n/a
SIPLACE Wafer System SWS Horizontal system, automatic wafer change, MCM
SWS wafer size 4" to 12"
4" / 6" with adapter on request
Wafer frame 12“/8“
6" on request
4" with adapter
Wafer frame: Maximum height 12“: 8.1 mm
8": 7.6 mm
6": 5.8 mm
Wafer magazine
a
a) Depending on the wafer magazine, you may need to mechanically adjust the base plate for the wafer magazines.
Up to 12"
Die Ejection System Programmable ejection speed (synchronous and asynchronous)
Option: Linear Dipping Unit LDU Individually programmable speed
Flux viscosity 3,000 to 100,000 cPs
Accuracy of flux height ± 5 µm
33
SIPLACE Wafer System
Technical data
Dimensions and weight
Length x width 1.580 mm x 720 mm
Weight 350 kg
Electrical ratings
Supply voltage 3 x 400 VAC, 50 Hz (Europe)
3 x 208 VAC, 60 Hz (USA)
Overall power 1.5 kW
Rated current 2.7 A at 3 x 400 VAC
4.2 A at 3 x 208 VAC
Fuse 3 x 16 A
Nominal current consumption of largest consumer 2 A
Noise emissions
Max. noise emissions 74 dB (A)
Permissible environmental impact
Room temperature Between 15°C and 35°C
Atmospheric humidity 30 - 75 %
(No higher than 45% on average to
prevent any possibility of condensa-
tion on the machine)