MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第241页

MIL-STD-883F METHOD 2010.11 18 June 2004 31 Condition A Conditi on B Class le vel S Class lev el B c . A ker f cont aining untr immed res ist or mater ial, unless that mater ial i s cont inuous ac ros s the k erf, and is…

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MIL-STD-883F
METHOD 2010.11
18 June 2004
30
Condition A Condition B
Class level S Class level B
c. Void or necking down that leaves less than 75 percent of the film resistor width undisturbed at a terminal.
d. Inactive resistor inadvertently connected to two separate points on an active circuit.
e. Separation between any two resistors or a resistor and a metallization path that is less than 0.25 mil, or 50
percent of the design separation, whichever is less.
f. Any thin film resistor that crosses a substrate irregularity (e.g., dielectric isolation line, oxide/diffusion step, etc.)
(see figure 2010-26).
NOTE: This criteria does not apply to square isolated islands of single crystal silicon in the polysilicon area.
g. Any resistor width reduced to less than one half the narrowest resistor width, resulting from voids or scratches or
a combination thereof (see figure 2010-29).
NOTE: Maximum allowable current density requirements shall not be exceeded.
FIGURE 2010-29. Scratch and void criteria for untrimmed resistors
.
h. Any sharp change in color of resistor material within 0.1 mil of the resistor/connector termination.
3.1.7 Laser-trimmed thin-film resistors
. Rejection shall be based on defects found within the actively used portions of the
film resistor. No device shall be acceptable that exhibits:
a. A kerf less than 0.1 mil in width, unless by design.
NOTE: Criteria does not apply for edge trimming.
b. A kerf containing particles of detritus.
MIL-STD-883F
METHOD 2010.11
18 June 2004
31
Condition A Condition B
Class level S Class level B
c. A kerf containing untrimmed resistor material, unless that material is continuous across the kerf, and is
undisturbed for a width greater than one-half times the narrowest resistor width, unless by design (see figure
2010-30).
NOTE: Maximum allowable current density requirements shall not be exceeded.
Top hat trim
FIGURE 2010-30. Resistor Criteria
.
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MIL-STD-883F
METHOD 2010.11
18 June 2004
32
Condition A Condition B
Class level S Class level B
Rectangular L trim
FIGURE 2010-30. Resistor Criteria
- Continued.
d. Resistor width that has been reduced by trimming to less than one-half the narrowest resistor width, including
voids, scratches, or a combination thereof, in the trim area (see figure 2010-31).
NOTE: Trimming of more than 50 percent of a given resistor shunt link is acceptable by design providing that the last
shunt link of the resistor adder network is not trimmed greater than 50 percent. All trimmable resistor shunt
links shall be defined on the design layout drawing.
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