MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第494页
MIL-STD-883F METHOD 3007.1 15 November 1974 2 This page i ntenti onally lef t blank

MIL-STD-883F
METHOD 3007.1
15 November 1974
1
METHOD 3007.1
LOW LEVEL OUTPUT VOLTAGE
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document with regard to LOW level output drive which is specified as a maximum value (V
OL
max) or
a minimum value (V
OL
min). This method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
2. APPARATUS
. The test instrument shall be capable of loading the output of the circuit under test with the specified
positive or negative currents (I
OL
). Resistors may be used to simulate the applicable current levels. The test instrument
shall be capable of supplying the worst case power supply and input voltages. The test chamber shall be capable of
maintaining the device under test at any specified temperature.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Worst case power supply voltages and
worst case input levels including guaranteed noise margins shall be applied to the test circuit to provide a LOW level output.
Forcing current, equal to the circuit worst case LOW level fan out, shall be applied to the test circuit output and the resultant
output voltage measured. The output measurement shall be made after each input is conditioned.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Current to be forced into or from the output terminal.
c. Power supply voltage(s).
d. Input levels.
e. V
OL
max or V
OL
min limits.
MIL-STD-883F
METHOD 3007.1
15 November 1974
2
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MIL-STD-883F
METHOD 3008.1
15 November 1974
1
METHOD 3008.1
BREAKDOWN VOLTAGE, INPUT OR OUTPUT
1. PURPOSE
. This method establishes the means for assuring device performance to the limits specified in the
applicable acquisition document in regard to input and output breakdown voltage symbolized as V
IH
(max), V
OH
(max), V
IL
(min), and V
OL
(min) as applicable. This method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL,
and MOS.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified temperature.
2.1 Method A
. This test is generally performed to assure that breakdown does not occur on a device. An instrument shall
be provided that has the capability of forcing a specified voltage at the input or output terminal of the test circuit and
measuring the resultant current flowing in that terminal. The test instrument shall also have the capability of applying
voltage levels to all other terminals. Care should be taken to assure that the test equipment does not inadvertently apply
voltage to the device under test that will exceed the maximum rating of each terminal and that the current from the test
equipment is sufficiently limited so that the device is not destroyed. This method can also be used to test the ability of
power supply terminals to withstand a voltage overload.
2.2 Method B
. This test is generally performed to assure that breakdown does occur on a device as specified in the
applicable acquisition document. An instrument shall be provided that has the capability of forcing a specified current at the
input or output terminal of the test circuit and measuring the resultant voltage at that terminal. The test instrument shall also
have the capability of applying voltage levels to all other terminals. Care should be taken to assure that the test equipment
does not inadvertently apply voltage to the device under test that will exceed the maximum rating of each terminal so that the
device is not destroyed. The minimum compliance voltage of the current source shall be specified when applicable.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature.
3.1 Method A
. All terminals, with the exception of the test terminal, shall be conditioned according to the applicable
acquisition document. A prescribed voltage shall be applied to the designated input or output terminal and the resultant
current measured. When testing for breakdown, all input and output terminals shall be tested individually. At the conclusion
of the test, the device shall be functional.
3.2 Method B
. All terminals, with the exception of the test terminal, shall be conditioned according to the applicable
acquisition document. The specified current shall be forced at the designated input or output terminal, and the voltage at the
terminal measured. At the conclusion of the test, the device shall be functional.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Forced voltages (method A).
c. Conditioning voltages for all other terminals.
d. Forced current (method B).
e. Maximum breakdown current limits (method A).
f. Minimum breakdown terminal voltage (method B).