MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第590页

MIL-STD-883F METHOD 5003 20 November 1969 8 This page i ntenti onally lef t blank

MIL-STD-883F

METHOD 5003

20 November 1969

e. Scanning electron microscopy and electron beam microanalysis. The scanning electron microscope, employing an

electron beam with a diameter on the order of a few hundred angstroms, is the most effective means of attaining

device structural information without the need for special sample preparation procedures. The scanning electron

microscope can perform chemical analysis, such as the microanalyzer, by incorporating a nondispersive x-ray

detector. An electron beam microanalyzer can be used for x-ray spectrochemical analysis of micron sized

volumes of material. Several other device structural properties are determinable through detection and display of

back-scattered primary electrons and secondary electrons. These instruments are most generally used for:

(1) Determination of surface potential variations using secondary electron scanning microscopy. The small size

of the electron beam coupled with the properties of secondary electrons result in the ability to examine

physical defects with much higher resolution and depth of field than light microscopy.

(2) Analysis of micron sized defects such as oxide pin-holed, metallization grain structure.

(3) Determination of products of solid state reactions, such as diffusion, precipitation, and intermetallic

formation.

(4) Corrosion product identification.

f. Electron microscopy. An examination at extremely high magnification of the structure of failed metallization and

bulk materials is best accomplished using electron microscopy.

g. Special test structures. Often the amount of reacted material on a failed circuit is too small to allow definitive

determination of chemical and structural properties. In addition, it is often necessary to reproduce the failure in a

controlled experimental manner for verification of the mechanism of failure. Special test structures may be

fabricated with variations in geometry and materials permitting study of the mechanism without extraneous

influences. This is most advantageous when information is desired concerning the basic failure mechanism(s).

4. SUMMARY

. The following details must be specified in the applicable acquisition document:

a. Test condition letter (see 3.) for test conditions A, B, or C and where applicable, optional measurements (see 3.4),

identifying the specific procedures to be applied and details as to their option application.

b. Any special measurements not described in the applicable test condition.

c. Requirements for data recording and reporting including instructions as to disposition of original data, photographs,

radiographs, etc.

d. Physical and electrical specifications and limits for the device being analyzed.

MIL-STD-883F

METHOD 5003

20 November 1969

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MIL-STD-883F

METHOD 5004.11

18 June 2004

METHOD 5004.11

SCREENING PROCEDURES

1. PURPOSE

. This method establishes screening procedures for total lot screening of microelectronics to assist in

achieving levels of quality and reliability commensurate with the intended application. It must be used in conjunction with

other documentation such as appendix A of MIL-PRF-38535 or an applicable device specification to establish the design,

material, performance, control, and documentation requirements which are needed to achieve prescribed levels of device

quality and reliability. In recognition of the fact that the level of screening has a direct impact on the cost of the product as

well as its quality and reliability, two standard levels of screening are provided to coincide with two device classes or levels

of product assurance. Since it is not possible to prescribe an absolute level of quality or reliability which would result from a

particular screening level or to make a precise value judgment on the cost of a failure in an anticipated application, two

levels have been arbitrarily chosen. The method provides flexibility in the choice of conditions and stress levels to allow the

screens to be further tailored to a particular source, product, or application based on user experience. The user is cautioned

to collect experience data so that a legitimate value judgment can be made with regard to specification of screening levels.

Selection of a level better than that required for the specific product and application will, of course, result in unnecessary

expense and a level less than that required will result in an unwarranted risk that reliability and other requirements will not be

met. In the absence of specific experience data, the class B screening level is recommended for general applications.

Guidance in selecting screening levels or predicting the anticipated reliability for microcircuits may be obtained from

MIL-HDBK-217 Military Standardization Handbook Reliability Prediction.

NOTE: Reference to method 5004 on a stand alone basis (not indicating compliance or noncompliance to 883) requires

full compliance to 1.2.1 of this standard.(See 1.2.2)

2. APPARATUS

. Suitable electrical measurement equipment necessary to determine compliance with applicable

acquisition documents and other apparatus as required in the referenced test methods.

3. PROCEDURE

3.1 Screening procedures for microcircuits

. Screening of microcircuits shall be conducted as described in 3.1.1 through

3.1.19 and in the sequence shown except where variations in sequence are specifically allowed herein. This provision does

not preclude the performance of additional tests or inspection which may be required for specific devices or which may be

desirable to optimize results of screening; however, any such special test inspections shall be subjected to the requirements

of A.3.4.3 of appendix A of MIL-PRF-38535. Any burn-in in addition to that specified is only permitted when documented in

the lot records, and any failures shall be counted in applicable PDA calculations. Where end-point or post-test

measurements are required as part of any given test method used in the screening procedure and where such post test

measurements are duplicated in the interim (post burn-in) or final electrical tests that follow, such measurements need not

be duplicated and need be performed only as part of the interim (post burn-in) or final electrical tests. Devices which pass

screening requirements of a higher reliability level shall be considered to meet the screening requirements of all lower levels.

In no case shall screening to a lower level than that specified be permitted. Microcircuits which are contained in packages

which have an inner seal or cavity perimeter of 2 inches or more in total length or which have a package mass of 5 grams or

more may be treated in accordance with 3.2 as an alternative to 3.1.5.

Qualified manufacturers list (QML) manufacturers who are certified and qualified to MIL-PRF-38535 or who have been

granted transitional certification to MIL-PRF-38535 may modify the class level B screening table (table I) as specified in the

applicable device specification or drawing and as permitted in 1.2 of MIL-STD-883 provided the modification is contained in

the manufacturers quality management (QM) plan and the "Q" or "QML" certification mark, is marked on the devices. For

contractor prepared drawings with specific references to individual test methods of MIL-STD-883 (e.g., method 1010,

method 2001, etc.), these test methods may not be modified by a QML manufacturer without the knowledge and approval of

the acquiring activity.