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Document Feedback CMV12000 Electrical Characteristics Datasheet • PUBLIC DS000603 • v6 - 00 • 2023 -Sep- 22 84 │ 14 5 Electrical Characteristi cs Figure 6: Electrical Characteristics of CMV12 000 Symbol Parameter Conditi…

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CMV12000
Absolute Maximum Ratings
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 13
4 Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only. Functional operation of the device at these or any other
conditions beyond those indicated under “Operating Conditions” is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Figure 5:
Absolute Maximum Ratings of CMV12000
Symbol
Parameter
Min
Max
Unit
Comments
Electrical Parameters
VDD18
Digital supply LVDS, ADC
1.8
2.0
V
VDD33
Analog supply ADC, PGA
3.0
3.6
V
VDD_PIX
Analog pixel supply
2.3
3.6
V
VDD_RES
Analog pixel reset supply
3.0
3.6
V
Continuous Power Dissipation (T
A
= 70 °C)
P
T
Continuous power dissipation
4200
mW
At max. frame rate
Electrostatic Discharge
ESD
HBM
Electrostatic discharge hbm
±2000
V
JS-001-2012 Class 2
Temperature Ranges and Storage Conditions
T
J
Operating junction temperature
-30
70
°C
T
STRG
Storage temperature range
20
40
°C
RH
NC
Relative humidity (non-
condensing)
30
60
%
Storage conditions
CMV12000
Electrical Characteristics
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 14
5 Electrical Characteristics
Figure 6:
Electrical Characteristics of CMV12000
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Power Supplies
VDD18
Digital supply
LVDS, ADC
1.95
1.98
1.98
V
VDD33
Analog supply
ADC, PGA
3.2
3.3
3.4
V
VDD_PIX
Analog pixel
supply
2.9
3.0
3.1
V
VDD_RES
Analog pixel
reset supply
3.2
3.3
3.4
V
IDD18
Supply current
Readout
Peak
750
1700
mA
IDD33
Supply current
Readout
Peak
180
250
mA
IDD_PIX
Supply current
Readout
Peak
15
1000
(1)
mA
IDD_RES
Supply current
Readout
Peak
25
200
mA
Digital I/O
V
IH
High level input
2.0
VDD33
V
V
IL
Low level input
GND
0.8
V
V
OH
High level
output
VDD=3.3 V
I
OH
= -2 mA
2.4
V
V
OL
Low level output
VDD=3.3 V
I
OH
= 2 mA
0.4
V
f
SPI
SPI clock
30
MHz
f
CLK
Temp. sensor
(2)
input clock
10
60
MHz
LVDS I/O
V
ID
Differential input
voltage
Steady state
100
350
600
mV
V
IC
Receiver input
range
Steady state
0.0
2.4
V
CMV12000
Electrical Characteristics
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 15
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
ID
Receiver input
current
V
INP|INN
=1.2 V±50 mV,
0 ≤ V
INP|INN
≤ 2.4 V
20
µA
ΔI
ID
Receiver input
current
difference
|I
INP
– I
INN
|
6
µA
V
OD
Differential
output voltage
Steady state,
R
load
= 100 Ω
247
350
454
mV
ΔV
OD
Difference in
V
OD
between
complementary
output states
Steady state,
R
load
= 100 Ω
50
mV
V
OC
Common mode
voltage
Steady state,
R
load
= 100 Ω
1.125
1.25
1.375
V
ΔV
OC
Difference in
V
OC
between
complementary
output states
Steady state,
R
load
= 100 Ω
50
mV
I
OS,GND
Output short
circuit current to
ground
V
OUTP
= V
OUTN
= GND
24
mA
I
OS,PN
Output short
circuit current
V
OUTP
= V
OUTN
12
mA
f
LVDS
LVDS input
clock frequency
100
600
MHz
(1) This is a short peak during FOT, at the global shutter reset of all pixels. This peak has to be supplied by enough
decoupling capacitors.
(2) Optional input clock at pin CLK_IN for the temperature sensor