CMV12000_DS000603_6-00.pdf - 第17页
Document Feedback CMV12000 Typical Operating Characteristics Datasheet • PUBLIC DS000603 • v6 - 00 • 2023 -Sep- 22 84 │ 16 6 Typical Operating Characterist ics 6.1 Electro-Optical Characteristics Below are the typical el…
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CMV12000
Electrical Characteristics
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 15
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
ID
Receiver input
current
V
INP|INN
=1.2 V±50 mV,
0 ≤ V
INP|INN
≤ 2.4 V
20
µA
ΔI
ID
Receiver input
current
difference
|I
INP
– I
INN
|
6
µA
V
OD
Differential
output voltage
Steady state,
R
load
= 100 Ω
247
350
454
mV
ΔV
OD
Difference in
V
OD
between
complementary
output states
Steady state,
R
load
= 100 Ω
50
mV
V
OC
Common mode
voltage
Steady state,
R
load
= 100 Ω
1.125
1.25
1.375
V
ΔV
OC
Difference in
V
OC
between
complementary
output states
Steady state,
R
load
= 100 Ω
50
mV
I
OS,GND
Output short
circuit current to
ground
V
OUTP
= V
OUTN
= GND
24
mA
I
OS,PN
Output short
circuit current
V
OUTP
= V
OUTN
12
mA
f
LVDS
LVDS input
clock frequency
100
600
MHz
(1) This is a short peak during FOT, at the global shutter reset of all pixels. This peak has to be supplied by enough
decoupling capacitors.
(2) Optional input clock at pin CLK_IN for the temperature sensor
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CMV12000
Typical Operating Characteristics
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 16
6 Typical Operating Characteristics
6.1 Electro-Optical Characteristics
Below are the typical electro-optical specifications of the CMV12000. These are typical values for the
whole operating temperature range unless otherwise specified.
Figure 7:
Electro-Optical Characteristics
Parameter
Value
Remark
Effective pixels
4096 × 3072
Pixel pitch
5.5 µm × 5.5 µm
Optical format
APS-like
28.16 mm
Pixel type
Global shutter
with true CDS
Allows fixed pattern noise correction and reset (kTC) noise canceling by true
correlated double sampling (true-CDS).
Shutter type
Pipelined global
shutter
Exposure of next image during readout of the previous image.
Full well charge
13500 e
Pixel full well charge
Conversion gain
0.11 DN/e
10b, unity gain
Sensitivity
4.64 V/lux.s
0.22 A/W
@555 nm
Temporal noise
13 e
Dynamic range
60 dB
SNR
MAX
41.3 dB
Shutter efficiency
1/50000
@555 nm
Dark current
70 e/s
@ 25 °C junction temperature
DC doubles every 6.5 °C increase
DCNU
7.5 e/s
@ 25 °C sensor temperature; DC Non Uniformity
FPN
<1 LSB
<0.1 % of full swing in 10b mode; fixed pattern noise
PRNU
< 1.27 % RMS
Photo Response Non Uniformity; RMS of signal
Color filters
Optional
RGB Bayer pattern
QE
50 %
Monochrome device @ 555 nm; Quantum efficiency
LVDS outputs
64 Data
1 Control
1 Clock
Each data output running @600 Mbit/s maximum.
Less outputs selectable at reduced frame rate
Frame rate
300 fps
Using 10-bit mode at 600 Mbit/s
Higher frame rate possible in row windowing mode.
Timing generation
On-chip
Possibility to control exposure time through external pin.
PGA
Yes
x1, x2, x3, x4 analog gain settings
Programmable
registers
Sensor
parameters
Window coordinates, Timing parameters, Gain & offset, Exposure time,
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CMV12000
Typical Operating Characteristics
Datasheet • PUBLIC
DS000603 • v6-00 • 2023-Sep-22
84 │ 17
Parameter
Value
Remark
HDR mode
Interleaved
Multiple slope
2 exposure times for odd/even columns
Partial pixel reset
ADC
8/10/12-bit
Column ADC
Interface
LVDS; 600 Mbit/s
Serial output data + synchronization signals
I/O logic levels
LVDS = 1.8 V
Dig. I/O = 3.3 V
Cover glass
D263T eco
Double sided AR coating
T≥97.0 % abs, 400 - 900 nm, per surface, AOI=15°
Mass
15.2 g
6.2 Spectral Characteristics
Figure 8:
Quantum Efficiency
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
300 400 500 600 700 800 900 1000 1100
Absolute QE
Wavelength [nm]
NIR
Mono
Color_R
Color_Gr
Color_B
Color_Gb