MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第127页

MIL-STD-883F METHOD 1019.6 7 March 2003 11 Figure 1019- 2. Flow diagr am for i onizing r adiation t est pr ocedure f or bipol ar (or BiCMOS) l inear or mixed-si gnal ci rcui ts Determine the need for ELDRS testing See Pa…

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MIL-STD-883F
METHOD 1019.6
7 March 2003
10
FIGURE 1019-1. Flow diagram for ionizing radiation test
procedure for MOS and digital bipolar circuits.
NO YES
SELECT DOSE RATE
SEE PARA. 3.6
IRRADIATE TO SPECIFIED DOSE
SEE PARA. 3.9
PERFORM SPECIFIED ELECTRICAL TESTS
SEE PARA. 3.8
DETERMINE IF EXTENDED ROOM TEMPER-
ATURE ANNEAL TEST IS REQUIRED
SEE PARA. 3.11.1
PERFORM SPECIFIED
ELECTRICAL TESTS
S
EE PARA. 3.8
DETERMINE IF ACCELERATED
ANNEALING TEST IS REQUIRED
SEE PARA.
3.12.1
DETERMINE IF 0.5X OVERTEST
IS REQUIRED
SEE PARA.
3.12.2.a.2
IRRADIATE AN ADDITIONAL 0.5 X
SPECIFIED DOSE
SEE PARA.
3.12.2.a
PERFORM ONE OF THREE ACCELERATED
ANNEALING PROCEDURES
SEE PARA.
3.12.2.b
PERFORM SPECIFIED ELECTRICAL TESTS
SEE PARA. 3.8
PASS
FAIL
FAIL
PASS
PASS
NO
YES
PASS FAIL
MIL-STD-883F
METHOD 1019.6
7 March 2003
11
Figure 1019-
2. Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear
or mixed-signal circuits
Determine the need for ELDRS testing
See Para. 3.13
No
Yes
Perform standard test
(Para 3.6.1 Condition A)
See Para 3.13.1
Pass Fail
Test at the intended
application dose rate
Para 3.6.3
Condition C
Perform low dose rate test
per Para 3.6.4, Condition D
1. ≤ 25 krad:
≤ 10 mrad/s
dose = 1.5 spec
2. >25 krad:
≥ 1000 hrs
dose = 2 spec
Perform elevated temperature
irradiation per Para 3.6.5,
Condition E
1. May be used if spec dose
≤ 50 krad
2. 0.5 to 5 rad/s, 100 ° C
3. Parameter design margin = 3
Pass
Pass
Fail
Pass Fail Fail
MIL-STD-883F
METHOD 1019.6
7 March 2003
12
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