MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第144页

MIL-STD-883F METHOD 1021.2 15 November 1991 6 3.12 Report . As a mi nimum the repor t shal l inc lude the fol lowing: a. Device ident ifi cati on. b. Test date and tes t operat or. c. Test fa cility, radia tion sou rce s…

MIL-STD-883F

METHOD 1021.2

15 November 1991

3.4 Test circuit preparation

. The test circuit shall be assembled including a test circuit board, line drivers, electrical

instruments, functional test equipment, transient measurement equipment, and cables to provide the required input biasing,

output monitoring, and loading.

3.5 Facility preparation

. The radiation source shall be adjusted to operate in the specified mode and provide a radiation

pulse width within the specified width range. The required dosimeters shall be installed as close as practical to the device

under test. If special equipment is needed to control the temperature to the value specified in the test plan, this equipment

must be assembled and adjusted to meet this requirement.

3.6 Safety requirements

. The health and safety requirements established by the local Radiation Safety Officer or Health

Physicist shall be observed.

3.7 Test circuit noise check

. With all circuitry connected, a noise check shall be made. This may be done by inserting a

resistor circuit in place of the test device. Resistor values chosen shall approximate the active resistance of the device

under test. A typical radiation pulse shall be applied while the specified outputs are monitored. If any of the measured

transient voltages are greater than 10 percent of the expected parameter response, the test circuit is unacceptable and shall

not be used without modification to reduce noise.

3.8 Bias and load conditions

. Unless otherwise specified, the power supply shall be at the minimum allowed value. Input

bias levels shall be at worst-case logic levels. Outputs shall be loaded with the maximum load conditions in both logic states

(usually equivalent to maximum circuit fanout).

3.9 Temperature

. The temperature of the devices during test should be measured with an accuracy of ±5°C unless

higher accuracy is required in the test plan.

3.10 Procedure for dose rate upset testing

. The device to be tested shall be placed in the test socket. The required

pulse sequence shall be applied so that the device is in the state specified by the first of the state vectors in 3.1.

a. Set the intensity of the radiation source to the first radiation test level specified in the test plan. Expose the device

to a pulse of radiation, and measure the transient output responses and power supply current transient. For

sequential logic circuits, perform a dynamic functional test to see if changes occurred in internal logic states.

b. Repeat 3.10a for all other state vectors and radiation levels specified in the test plan.

3.11 Radiation exposure and test sequence for upset threshold testing

. The device to be tested shall be placed in the

test socket. The required pulse sequence shall be applied so that the device is in the state specified by the first of the state

vectors determined in 3.1, or is operating with the specified test vector sequence for dynamic upset.

a. Set the intensity of the radiation source to the initial level recommended in the test plan, and expose the device to

a pulse of radiation. Determine whether a stored data upset, logic state upset, or dynamic upset occurs, as

appropriate.

b. If no upset occurred, increase the radiation level according to the sequence specified in the test plan; if an upset

is observed decrease the radiation level. After the radiation source is adjusted to the new intensity, reinitialize the

part to the required state vector, expose it to an additional pulse, and determine whether or not upset occurred.

Continue this sequence until the upset response threshold level is bracketed with the resolution required in the

test plan.

c. The power supply peak transient current shall be monitored and recorded during radiation testing unless it is not

required by the test plan.

d. Repeat test sequences 3.11a through 3.11c for all of the state vectors.

MIL-STD-883F

METHOD 1021.2

15 November 1991

3.12 Report

. As a minimum the report shall include the following:

a. Device identification.

b. Test date and test operator.

c. Test facility, radiation source specifications, and radiation pulse width.

d. Bias conditions, output loading, and test circuit.

e. Description of the way in which state vectors for testing were selected.

f. State vectors used for radiation testing and functional test conditions for each state vector.

g. Criteria for transient output upset.

h. Records of the upset threshold and power supply current for each state vector.

i. Equipment list.

j. Results of the noise test.

k. Temperature (see 3.9).

4. SUMMARY

. The following details shall be specified.

a. Device type and quantity to be tested.

b. Test circuit to be used, including output loading impedance.

c. State vectors to be used in testing and device output pins to be monitored.

d. Functional test sequence.

e. Power supply voltage and bias conditions for all pins.

f. Pulse width of the radiation source (see 2.1).

g. The method of selecting steps between successive irradiation levels and the required resolution.

h. Restrictions on ionizing (total) dose if other than that specified in 3.1.

i. Temperature of the devices during testing.

j. Requirement for measuring and recording power supply peak transient current (see 3.11c).

k. Failure criteria for transient output voltage upset.

l. Failure criteria for power supply current and output current, if applicable.

MIL-STD-883F

METHOD 1022

4 November 1980

METHOD 1022

MOSFET THRESHOLD VOLTAGE

1. PURPOSE

. This method establishes the means for measuring MOSFET threshold voltage. This method applies to

both enhancement-mode and depletion-mode MOSFETs, and for both silicon on sapphire (SOS) and bulk-silicon MOSFETs.

It is for use primarily in evaluating the response of MOSFETs to ionizing radiation, and for this reason the test differs from

conventional methods for measuring threshold voltage.

1.1 Definition

1.1.1 MOSFET threshold voltage, V

. The gate-to-source voltage at which the drain current is reduced to the leakage

current, as determined by this method.

2. APPARATUS

. The apparatus shall consist of a suitable ammeter, voltmeters, and voltage sources. The apparatus

may be manually adjusted or, alternatively, may be digitally programmed or controlled by a computer. Such alternative

arrangements shall be capable of the same accuracy as specified below for manually adjusted apparatus.

2.1 Ammeter (A

). The ammeter shall be capable of measuring current in the range specified with a full scale accuracy of

±0.5 percent or better.

2.2 Voltmeters (V

and V

). The voltmeters shall have an input impedance of 10 MΩ or greater and have a capability of

measuring 0 to 20 V with a full scale accuracy of ±0.5 percent or better.

2.3 Voltage sources (VS

and VS

). The voltage sources shall be adjustable over a nominal range of 0 to 20 V, have a

capability of supplying output currents at least equal to the maximum rated drain current of the device to be tested, and have

noise and ripple outputs less than 0.5 percent of the output voltage.

3. PROCEDURE

NOTE: The absolute maximum values of power dissipation, drain voltage, drain current, or gate voltage specified in either

the applicable acquisition document or the manufacturer's specifications shall not be exceeded under any circumstances.

3.1 N-channel devices

3.1.1 Test circuit

. The test circuit shown on figure 1022-1 shall be assembled and the apparatus turned on. With the

voltage sources VS

and VS

set to 0 volts, the MOSFET to be tested shall be inserted into the test circuit. The gate polarity

switch shall be set to the appropriate position, and voltage source VS

shall be set 1.0 V negative with respect to the

anticipated value of threshold voltage V

. Voltage source VS

shall be adjusted until voltmeter V

indicates the specified

drain voltage V

. The current I

, indicated by ammeter A

, and the gate voltage V

, indicated by voltmeter V

, shall be

measured and recorded.

3.1.2 Measurement of gate voltages

. The measurement shall be repeated at gate voltages which are successively 0.25

volts more positive until either the maximum gate voltage or maximum drain current is reached. If the gate voltage reaches

0 volts before either of these limits has been reached, the gate polarity switch shall be changed as necessary and

measurements shall continue to be made at gate voltages which are successively 0.25 volts more positive until one of these

limits has been reached.