MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS.pdf - 第240页

MIL-STD-883F METHOD 2010.11 18 June 2004 30 Condition A Conditi on B Class le vel S Class lev el B c . Void or nec ki ng down that leaves les s than 75 per cent of the fil m res ist or widt h undist urbed at a ter minal …

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MIL-STD-883F
METHOD 2010.11
18 June 2004
29
Condition A Condition B
Class level S Class level B
a. Any misalignment between the conductor/resistor in which the actual width X of the overlap is less than 50
percent of the original resistor width.
FIGURE 2010-27. Film resistor contact area
.
b. No visible line of contact overlap between the metallization and film resistor (see figure 2010-28).
FIGURE 2010-28. Film resistor contact area
.
MIL-STD-883F
METHOD 2010.11
18 June 2004
30
Condition A Condition B
Class level S Class level B
c. Void or necking down that leaves less than 75 percent of the film resistor width undisturbed at a terminal.
d. Inactive resistor inadvertently connected to two separate points on an active circuit.
e. Separation between any two resistors or a resistor and a metallization path that is less than 0.25 mil, or 50
percent of the design separation, whichever is less.
f. Any thin film resistor that crosses a substrate irregularity (e.g., dielectric isolation line, oxide/diffusion step, etc.)
(see figure 2010-26).
NOTE: This criteria does not apply to square isolated islands of single crystal silicon in the polysilicon area.
g. Any resistor width reduced to less than one half the narrowest resistor width, resulting from voids or scratches or
a combination thereof (see figure 2010-29).
NOTE: Maximum allowable current density requirements shall not be exceeded.
FIGURE 2010-29. Scratch and void criteria for untrimmed resistors
.
h. Any sharp change in color of resistor material within 0.1 mil of the resistor/connector termination.
3.1.7 Laser-trimmed thin-film resistors
. Rejection shall be based on defects found within the actively used portions of the
film resistor. No device shall be acceptable that exhibits:
a. A kerf less than 0.1 mil in width, unless by design.
NOTE: Criteria does not apply for edge trimming.
b. A kerf containing particles of detritus.
MIL-STD-883F
METHOD 2010.11
18 June 2004
31
Condition A Condition B
Class level S Class level B
c. A kerf containing untrimmed resistor material, unless that material is continuous across the kerf, and is
undisturbed for a width greater than one-half times the narrowest resistor width, unless by design (see figure
2010-30).
NOTE: Maximum allowable current density requirements shall not be exceeded.
Top hat trim
FIGURE 2010-30. Resistor Criteria
.
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